Growth of the Huoersuosi anticline （north Tianshan Mountains） by limb rotation since the late Miocene

The Huoerguosi anticline, located in the north Tianshan Mountains piedmont fold-and-thrust belt, is a trending east-west fault-related fold. In the cross section along the Jingou River, its south limb is composed of the pre-growth strata of the Anjihaihe （E2.3a）, the Shawan （（E3-N1）s）, the Taxihe （N1t） and the lower part of the Dushanzi （N2d） Formations, trending east-west and dipping to south 55°, and the growth strata of the upper part of the Dushanzi （N2d） and Xiyu （（N2-Q1）x） Formations, dips of which decrease from 55° at the base of the growth strata to 47° at the bottom of the Xiyu （（N2-Q1）x） Formation to -0° at the top of the Xiyu （（N2-Q1）x） Formation. The strata at the north limb of the anticline are vertical or over-turned, and are cut by the breakthrough thrusts to result in the drag fold. In the depth, the anticline is symmetric, and its core comprises the Cretaceous and the Jurassic coal-bearing beds. In the seismic profile, the seismic reflectors of pre-growth strata at the south limb of the anticline dip to south constantly, and ones of the growth strata fan southward, whose dips decrease upward. The geometry of the south limb growth strata outcropped along the Jingou River valley and the deep structure of the anticline shown in the seismic profile indicate that the Huoerguosi anticline is a detachment fold anticline growing by limb rotation. Based on the growth model and magnetostratigraphic age, during the growing process of the Huoerguosi anticline, the average shortening rate absorbed by the south limb is -0.46 mm/a, and the average uplifting rate of the anticline is -0.86 mm/a which exceeds the average deposition rate, which is in accordance with the fact that the top of the anticline is intensely eroded. Considering symmetric geometry of the Huoerguosi anticline and ignoring the breakthrough thrusts, the shortening of the whole anticline should be more than -0.92 mm/a, doubling the shortening rate determined from the growth at the south limb.     

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition (UHVCVD) SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si (001) substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dis- location density.     

Temperature dependent spectral response characteristic of III-V compound tandem cell

The GaInP/GaAs/Ge triple-junction tandem cells with a conversion efficiency of 27.1% were fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Temperature dependence of the spectral response measurements of the GaInP/GaAs/Ge tandem cell was performed by a quantum effi-ciency system at temperatures ranging from 25℃ to 160℃. The red-shift phenomena of the absorption limit for all subcells were observed with increasing temperature, which is dued to the energy gap nar-rowing with temperature. The short-circuit current densities (J_sc)of GaInP, GaAs and Ge subcells at room temperature calculated based on the spectral response data were 12.9, 13.7 and 17 mA/cm², re-spectively. The temperature coefficient of J_sc for the tandem cell was determined to be 8.9 mA/(cm²·℃), and the corresponding temperature coefficient of the open-circuit voltage deduced from the se-ries-connected model was -6.27 mV/℃.     

钝缀锦蛤选育群体F2生长性状相关性及遗传力分析

为开展钝缀锦蛤早期群体选育,通过生长性状研究群体选育的潜力,以经1代群体选育钝缀锦蛤(Tapes dorsatus)为亲本,通过阶段性移养的方式建立7个半同胞家系和混养F_2闭锁群体,分析12月龄和18月龄F_2群体的生长性状相关性,基于约束极大似然法(Restricted Maximum Likelihood,REML)估算12月龄钝缀锦蛤生长性状遗传力。结果显示钝缀锦蛤生长性状相关性达到极显著水平(P0.01)。根据多元回归分析结果,12月龄F_2群体壳长、壳高和壳宽对体质量直接作用为0.377,0.370,0.276;18月龄F_2群体壳长、壳高和壳宽对体质量直接作用为0.389,0.361,0.351。2个阶段壳体性状对体质量的直接作用相近,且直接作用大于间接作用,壳长对体质量直接作用最大。相比12月龄,8月龄F2群体壳宽对体质量的直接作用提高。12月龄和18月龄F2群体壳长(x_1)、壳高(x_2)、壳宽(x_3)对体质量(y)的回归方程分别为y=-48.724+0.513x_1+0.754x_2+0.882x_3(R~2=0.848)和y=-94.689+0.772x_1+1.141x_2+1.608x_3(R~2=0.864)。估算壳长、壳高、壳宽、体质量半同胞个体遗传力分别为0.14±0.16、0.10±0.08、0.49±0.28、0.29±0.14,壳宽的遗传力最高,表明壳宽是钝缀锦蛤选育的首选性状。本研究结果为钝缀锦蛤群体选育提供基础数据。     

SNOX法催化脱除模拟烟气中NO○x及SO2实验研究

为了实际考察SNOX方法的工艺条件对烟气中NO○x及SO2的催化脱除效果,针对NO○x的催化还原反应,采用浸渍法制备CuO/γ-Al2O3催化剂,考察了反应温度、空间速度、n(NH3)/n(NO○x)、SO2浓度对NO○x转化率的影响;针对SO2催化氧化反应,采用筛选出的V2O5催化剂,实验考察了反应温度、空间速度、n(O2)/n(SO2)对SO2转化率的影响.以实验研究成果为依据,进行了反应动力学计算.研究结果表明,在实验确定的最佳工艺条件下,NO○x还原率可达87.5%,经两级氧化SO2的转化率达94.3%.     

Role of support in photothermal carbon dioxide hydrogenation catalysed by Ni/CexTiyO2

Nickel was supported on varied ratios of ceria-titania mixed oxides(Ni/Ce_xTi_yO_2) to evaluate the role the support plays in photothermal carbon dioxide hydrogenation to produce methane. In a batch photothermal reactor system, Ni/CeO_2 achieved the highest conversion rate, reaching a conversion of 93% in approximately60–90 min. To decouple the influence of light and heat, the CO_2 hydrogenation was examined in an in-house designed photothermal reactor, whereby heat can be applied externally. Decoupling experiments revealed that heat from the thermalisation by light was the main driving force for the reaction. In addition, the conversion and temperature profile of the different catalysts revealed that the catalyst performance was governed by catalyst reducibility. H_2-TPR analyses showed that the Ni became more readily reducible with increasing Ce O_2 content,suggesting that the oxide plays a role in activating the Ni. The reduction temperature of the nickel catalyst(following a reduction and passivation process) was below 200 °C, which meant that the inherent heating temperature of the photothermal reactor was sufficient to initiate Ni/CexTiyO_2 catalyst activity. The exothermic methanation reaction was then able to heat the system further, ultimately reaching a temperature of 285 °C. The ancillary rise in temperature promotes further nickel reduction and methane formation, leading to a "snow-ball"effect. The findings demonstrate that, to achieve a "snow-ball" effect in a photothermal system, designing a catalyst which is easy to reduce, active for CO_2 hydrogenation, and capable of converting light to heat for its initial activation is critical.     

Supermolecular layered double hydroxides

Research progresses in the layered double hydroxides [M _(1-x ^)/2+ M _x ³⁺ (OH)₂] ^x+ A _x ^n/n− ·mH₂O intercalated with metal coordinate ions or oxometalates in the last ten years are reviewed. These layered double hydroxides are mainly intercalated with polyoxometalate (POM) ions, a LiAl-LDH photochemical assembly containing TiO₂ and CH₃(CH₂)₁₂COO⁻ anions, together with Zn(TPPC) (porphyrin derivate) and macrocyclic ligand-containing porphyrin derivate anions. Emphasis is put on the synthesis methods for intercalation of the anions into the interlayer regions, the characterization techniques and structures for the layered compounds and the newest research progress in the fields such as catalysis. The review also forecasts the prospects of the field.     

Chemical states of the atoms in magnetic multilayers Ta/NiO x /Ni81Fe19/Ta and Co/AlO x /Co

Ta/NiO _x /Ni₈₁Fe₁₉/Ta and Co/AlO _x /Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (H _ex) and the coercivity (H _c) of NiO _x /Ni₈₁Fe₁₉ as a function of the ratio of Ar to O₂ during the deposition process were studied. The composition and chemical states at the interface region of NiO _x /NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O₂ is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1 and the valence of nickel is +2. At this point, NiO _x is antiferromagnetic NiO and the corresponding H_ex is the largest. As the ratio of Ar/O₂ deviates from 7, the H _ex will decrease due to the presence of magnetic impurities such as Ni⁺³ or metallic Ni at the interface region of NiO _x /NiFe, while the H _c will increase due to the metallic Ni. Al layers in Co/AlO _x /Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AlO _x was 1.2 nm.     

Electrical and band-gap properties of amorphous zinc–ind ium–tin oxide thin films

Zinc–indium–tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%,50% and 70%, respectively, of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In22xZnxSnxO3, where x=0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.     

Effect of Co on the martensitic transformation,crystal structure and magnetization of Ni<Subscript>52.5</Subscript>Mn<Subscript>23.5</Subscript>Ga<Subscript>24</Subscript> based ferromagnetic shape memory alloys

Five(Ni52.5Mn23.5Ga24)100-xCox(x = 0,2,4,6,8) alloys were prepared by arc melting,and the effects of Co addition on the martensitic phase transformation,crystal structure and magnetization were investigated.The phase transformation temperatures Ms,Mf,As and Af are proportional to the content of Co in the(Ni52.5Mn23.5Ga24)100-xCox alloys,which appears to be due to the variation in the valance electron concentration.The Curie temperature is sensitive to the composition of the alloy.As the amount of Co changes,both the Co-Mn exchange interaction and the distance between Mn atoms change.These,in turn,affect the Curie temperature and magnetization behavior of the alloy.The martensite phases in all the alloys are domained in three different orientations,the domain boundary was determined to belong to the family of {112} lattice planes.     

SiGe合金氧化层中的纳米结构

我们在硅锗合金衬底上采用氧化等制膜方式生成零维和三维的纳米结构样品，用高精度椭偏仪(HPE)、卢瑟福背散射谱仪(RBS)和高分辨率扫描透射电子显微镜(HR-STEM)测量样品的纳米结构。并采用美国威思康新州立大学开发的Rump模拟软件对卢瑟福背散射谱(RBS)中的CHANNEL谱和RANDOM谱分别进行精细结构模拟。计算且测量出纳米氧化层与锗的纳米薄膜结构分布，并且反馈控制加工过程。优化硅锗半导体材料纳米结构样品的加工条件。我们在硅锗合金的氧化层表面中首次发现纳米锗量子点和量子层结构，我们首次提出的生成硅锗纳米结构的优化加工条件的氧化时间和氧化温度的匹配公式和理论模型与实验结果拟合得很好。     

Carbon-nitrogen/graphene composite as metal-free electrocatalyst for the oxygen reduction reaction

Sheet-like carbon-nitrogen (CNx)/graphene composites with a high content of nitrogen (x≤0.15) was prepared by the carbonization of polypyrrole (PPy)/reduced-graphene-oxide (rGO) composite at 600-800°C. We used rGO instead of graphene oxide (GO) sheets as a template and a substrate to immobilize PPy since the PPy/GO composite agglomerates easily because of the dehydration of excess oxygen-containing groups on the GO sheets during the drying process. The dried PPy/rGO intermediate and its derived CNx/graphene products retain their high dispersion and loose-powder features. The as-prepared CNx/graphene composites have a total nitrogen content of about 10 at% and their nitrogen state is mainly of pyridinic and graphitic type. CNx/graphene composites exhibit excellent performance for the oxygen reduction reaction (ORR) in terms of electrocatalytic activity, stability and immunity towards methanol crossover and CO poisoning, suggesting their potential as metal-free electrocatalysts for the ORR.     

MECHANISM OF NANOSTRUCTURE IN OXIDATION OF Si1-xGex AL-LOYS

我们在硅锗合金衬底上采用氧化等制膜方式生成零维和三维的纳米结构样品,用高精度椭偏仪(HPE)、卢瑟福背散射谱仪(RBS)和高分辨率扫描透射电子显微镜(HR-STEM)测量样品的纳米结构,并采用美国威思康新州立大学开发的Rump模拟软件对卢瑟福背散射谱(RBS)中的CHANNEL谱和RANDOM谱分别进行精细结构模拟,计算且测量出纳米氧化层与锗的纳米薄膜结构分布,并且反馈控制加工过程,优化硅锗半导体材料纳米结构样品的加工条件.我们在硅锗合金的氧化层表面中首次发现纳米锗量子点和量子层结构,我们首次提出的生成硅锗纳米结构的优化加工条件的氧化时间和氧化温度的匹配公式和理论模型与实验结果拟合得很好.     

Effect of reactor pressure on the growth rate and structural properties of GaN films

The effect of reactor pressure on the growth rate, surface morphology and crystalline quality of GaN films grown on sapphire by metalorganic chemical vapor deposition is studied. The results show that as the reactor pressure increases from 2500 to 20000 Pa, the GaN surface becomes rough and the growth rate of GaN films decreases. The rough surface morphology is associated with the initial high temperature GaN islands, which are large with low density due to low adatom surface diffusion under high reactor pressure. These islands prolong the occurrence of 2D growth mode and decrease the growth rate of GaN film. Meanwhile, the large GaN islands with low density lead to the reduction of threading dislocation density during subsequent island growth and coalescence, and consequently decrease the full width at half maximum of X-ray rocking curve of the GaN film.     

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiN x interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for ( 1102 ) reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0×10 8 cm 2 . GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiN x interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.     

淀粉还原氢化钛制备Ti(C;N)纳米粉

研究了用淀粉还原氢化钛制备碳氮化钛纳米粉的工艺及反应机理·结果表明 ,在实验范围内 ,降低合成温度 ,缩短保温时间或提高氮气流量有利于形成氮含量高的碳氮化钛粉末·通过控制合成温度和保温时间 ,可以控制Ti(C1-xNx)中的碳氮比 ,得到不同x值的碳氮化钛粉末·在 1 75 0℃ ,保温 2h,氮气流量为 5L/min条件下 ,可获得颗粒尺寸为 40～ 80nm的单相Ti(C0 .5N0 .5)粉末·     

Giant magneto-optical faraday effect of nanometer Fe-In<Subscript>2</Subscript>O<Subscript>3</Subscript> granular films

The giant magneto-optical Faraday effect of nanometer ferromagnetic metal-semiconductor matrix Fe-ln2O3 granular films prepared by the radio frequency sputtering are studied. The result shows that the Faraday rotation angle θF value of the granular film samples with Fe volume fraction x = 35% is of the order of 10^5（°）/cm at room temperature. Temperature dependence of the Faraday rotation angle θF of Fe0.35（In2O3）0.65 granular films shows that θF value below 10 K increases rapidly with the decrease of the temperature, and when T= 4.2 K, θF value is 106（°）/cm. Through the study of the dependence of low field susceptibility on temperature and the hysteresis loops at different temperatures, it has been found that when the temperature decreases to a critical point Tp = 10 K, the transformation of state from ferro-agnetic to spin-glass-like occurs in Fe0.35（In2O3）0.65 granular films. The remarkable increase of the Faraday rotation angle θF value of Fe0.35（In2O3）0.65 granular films below 10 K seems to arise from the sp-d exchange interaction of the granular film samples in the spin-glass-like state.     

Effects of substrate temperature and ambient oxygen pressure on growth of Ba(Fe1/2Nb1/2)O3 thin films by pulsed laser deposition

Ba(Fe1/2Nb1/2)O3 thin films were grown on Pt/TiO2/SiO2/Si substrates with pulsed laser deposition (PLD) at temperatures ranging from 823 to 923 K with the varied ambient oxygen pressure. X-ray diffraction (XRD) data confirmed the single phase of polycrystalline Ba(Fe1/2Nb1/2)O3 thin films. The effects of substrate temperature and ambient oxygen pressure on the surface morphologies of the thin films were investigated by atomic force microscopy (AFM) and the growth dynamics of thin films was discussed. Larger grains and denser surface morphologies were observed with increasing substrate temperature. While finer grains were produced with increasing ambient oxygen pressure due to more frequent collisions between the ejected species and ambient oxygen molecules. The influence of the substrate temperature and ambient oxygen pressure on the dielectric properties was also discussed. Improved dielectric constant and decreased dielectric loss was observed for the thin film deposited at evaluated temperature.     

Phase transition and thermodynamic properties of BaS: An <Emphasis Type="Italic">Ab initio</Emphasis> study

The hydrostatic-pressure-induced transition phase of BaS from the NaCl-type structure (B1) to the CsCl-type structure (B2) is investigated by ab initio plane-wave pseudopotential den-sity functional theory method. It is found that the transition pres-sure from B1 to B2 phases is 8.2 GPa according to the usual con-dition of equal enthalpy. Through the quasi-harmonic Debye model,the dependences of the relative volume V/V0 on the pres-sure P,the thermal expansion parameter ratio on pressure P,and the Debye temperature Θ and heat capacity CV on pressure P and temperature T are estimated.     

Influence of chemical liquids on the fatigue crack growth of the AZ31 magnesium alloy

The fatigue crack growth behavior of an AZ31 magnesium alloy was investigated by comparing the effect of zirconate and phosphate chemical liquids. The morphology, components, and phase compositions of the chemical depositions at the fatigue crack tip were analyzed by employing scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD), respectively. For samples with and without the chemical liquids, their stress-intensity factor values at the fatigue crack tip were compared by using a stress-strain gauge. The results demonstrated that a zirconate film (Zr_xO_y·Zn_xO_y) and a phosphate film (Zn₃(PO₄)₂·4H₂O and MgZnP₂O₇) could be formed on the fatigue crack-surface at the fatigue crack tip. The stress distribution was changed because of the chemical depositions and the causticity of the chemical liquids. This could decrease the stress-intensity factor value and thus effectively cause fatigue crack closure, which reduces the fatigue crack growth rate. Moreover, it was found that the fatigue crack closure effect of zirconates was more positive than that of phosphates.