石墨烯及二维六方氮化硼在LED散热中的应用

随着发光二极管的广泛应用,其散热问题日趋受到重视.针对发光二极管热导率影响其量子效率和产品寿命的问题,以具有高导热性能的石墨烯和二维六方氮化硼材料作为研究对象,综述了石墨烯和二维六方氮化硼在发光二极管电子器件散热领域中的一些重要的基础研究成果,并展望其在未来的应用前景.     

ZnO纳米结构的控制生长及其光电化学性能研究

本文采用简单的低温油浴反应法制备了六方柱状短棒、六方柱状长棒和片层状自组装ZnO花状纳米结构.通过对反应温度、表面活性剂聚乙烯吡咯烷酮(PVP)用量等实验条件的控制,合成了形态可控的ZnO花状纳米结构.用X射线粉末衍射仪(XRD)和扫描电子显微镜对ZnO纳米结构的成分、尺寸和形态进行了表征分析.实验研究表明,表面活性剂PVP的用量和反应温度对ZnO纳米结构的形态产生显著影响,探讨了PVP的作用及ZnO纳米结构的生长机制.光电化学性能研究表明,ZnO纳米结构的形态对其光电化学性能具有显著影响.基于实验和分析,我们对不同形态ZnO花状纳米结构的光电化学性能作了合理的解释.本文所制备的ZnO纳米结构在光解水制氢及环境污染水净化处理等清洁能源和环境治理领域具有潜在的应用前景.     

高比表面氮化硼的制备方法研究进展

近年来,国内外相继报道了很多制备中孔六方氮化硼的新方法新工艺,通过比较水(溶剂)热合成法、模板法、有机前驱体法、化学气相沉积法等几种主要制备方法,指出了它们的优缺点及发展前景,并对高比表面六方氮化硼的应用前景进行了展望。     

低维氮化硼纳米材料

低维碳纳米材料的广泛研究,引起了人们对于纳米尺度范围内不同维度的同素异形体材料的极大关注.氮化硼纳米材料具有与碳纳米材料类似的结构,但具有完全不同的性质.不同于金属性和半导体性的碳纳米管,氮化硼纳米管是一种电绝缘体,其带隙不依赖于管子的几何构型,它具有高的热传导率、优异的化学稳定性和良好的机械性能.二维的氮化硼纳米薄膜具有同样的优点.这些独特的性能使得氮化硼纳米管和纳米薄膜在各种潜在的领域,如光电子器件、功能复合材料、储氢,催化等,具有重要的应用前景.本文概述了我们在一维氮化硼纳米管、二维氮化硼纳米薄膜方面的一些理论研究,包括氮化硼纳米管与单层材料的结构、缺陷、化学修饰、气体吸附以及三维氮化硼纳米超结构.     

板带钢乳化液摩擦学性能与轧制工艺特征

采用不同的基础油及添加剂配制板带钢轧制乳化液后,通过四球摩擦磨损试验机考察了基础油及添加剂对乳化液摩擦学性能的影响,并通过冷轧实验对各乳化液的轧制工艺润滑效果进行了实际验证.结果表明:运动黏度和皂化值是根据实际的润滑需求选择基础油的主要参数,且基础油的选择影响添加剂的分散与稳定;极压抗磨剂对轧制乳化液的摩擦学性能有显著的提高作用;纳米六方氮化硼(h-BN)作为新型纳米润滑添加剂,不但自身具有优异的摩擦学性能,而且与传统添加剂有良好的协同提高作用;在使用含纳米氮化硼的乳化液进行润滑的冷轧过程中,各轧制工艺特征参数(轧制力、轧制功率等)有显著的降低,初步体现了良好的纳米润滑效应.     

关于以硼砂和氯化铵为原料制备六方氮化硼方法中若干问题的试验探讨

氮化硼是一种广泛应用于近代工业、电子技术、红外、雷达及宇航等方面的新型无机合成材料。各种氮化硼材料或器件,大都是以六方氮化硼为原料经过再加工或再合成而制得。六方氮化硼本身则可通过多种合成方法得到。目前,国内一些工厂的生产经验表明,以硼砂、氯化铵法制备六方氮化硼,原料易得,操作简单,设备也不复杂。可得六方氮化硼产品在高温高压下经催化剂作用转变为立方氮化硼的效果已有报导。但在六方氮化硼的生产中还存在着原材料消耗大,产品质量不稳定等问题。     

纳米氮化硼含量对Ti(C,N)基金属陶瓷组织和性能的影响

在氮气环境下,采用微波烧结技术制备氮化硼纳米粒子增强Ti(C,N)基金属陶瓷,采用SEM观察了其显微组织,并考察了BN含量对材料力学性能的影响.研究表明:纳米氮化硼对Ti(C,N)基金属陶瓷具有明显强化作用,添加1.5%纳米氮化硼时,复合材料的力学性能最佳,抗弯强度(TRS)提高了21.6%,硬度(HRA)提高了1.6%.纳米氮化硼的加入,阻碍了Ti(C,N)颗粒的溶解,金属陶瓷的断口形貌表现为穿晶断裂.     

氮化硼作为催化剂载体的功能化改性及其应用进展

六方氮化硼(h-BN)具有良好的高温稳定性和抗酸碱腐蚀性,与多种半导体、金属等纳米材料复合可形成性能优良的新材料.但受禁带较宽和化学惰性所限,影响了h-BN在催化材料领域的广泛应用.对h-BN进行功能化,是开发h-BN材料新特性和扩大其应用领域的重要途径.概述了h BN在物理层面和化学层面的功能化制备方法,重点分析了对...     

复合材料BN-B2O3纳米棒的制备

采用六角氮化硼(h-BN)粉末为原料,通过对h-BN粉末球磨得到BN纳米粉,并在管式炉中对BN纳米粉进行烧结,烧结环境分别为真空和空气.利用X射线衍射(XRD)和透射电子显微镜(TEM)研究所得样品的结构和成分.结果表明,样品为结晶较好的BN-B2O3纳米棒复合材料.     

金属镍基质上六边形Ni（OH）2纳米片的生长与表征

通过金属镍片与草酸钠的碱性溶液(pH值为12)140 ℃水热反应24 h, 在金属镍片表面原位生长出大面积直立的六边形Ni(OH)2纳米片.采用X射线衍射仪、扫描电镜和透射电子显微镜对产物进行了表征. 结果表明, 六边形Ni(OH)2纳米片为六方相单晶结构, 厚200～500 nm, 对角线长度1.6～3.6 μm. Ni(OH)2纳米片的产量和尺寸随着反应体系中乙醇与水体积比的增加而降低,研究了草酸钠在六边形Ni(OH)2纳米片形成过程中的作用.     

Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Nitride semiconductors are the materials of choice for a variety of device applications, notably optoelectronics and high-frequency/high-power electronics. One important practical goal is to realize such devices on large, flexible and affordable substrates, on which direct growth of nitride semiconductors of sufficient quality is problematic. Several techniques--such as laser lift-off--have been investigated to enable the transfer of nitride devices from one substrate to another, but existing methods still have some important disadvantages. Here we demonstrate that hexagonal boron nitride (h-BN) can form a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. The h-BN layer serves two purposes: it acts as a buffer layer for the growth of high-quality GaN-based semiconductors, and provides a shear plane that makes it straightforward to release the resulting devices. We illustrate the potential versatility of this approach by using h-BN-buffered sapphire substrates to grow an AlGaN/GaN heterostructure with electron mobility of 1,100?cm(2)?V(-1)?s(-1), an InGaN/GaN multiple-quantum-well structure, and a multiple-quantum-well light-emitting diode. These device structures, ranging in area from five millimetres square to two centimetres square, are then mechanically released from the sapphire substrates and successfully transferred onto other substrates.     

负偏压对六方氮化硼薄膜沉积特性的影响

利用射频磁控溅射法在n型Si(100)衬底上沉积六方氮化硼薄膜(h-BN),采用AFM、Raman、XPS、FTIR等技术研究负偏压对所沉积薄膜生长模式、结构、表面粗糙度、薄膜取向、相变等特性的影响。结果表明,当负偏压为0V时,沉积所得h-BN薄膜表面粗糙度较低、结晶性良好、c轴垂直于衬底且以层状模式生长;随着负偏压的增加,薄膜由层状模式生长转变为岛状模式生长,表面粗糙度增加,且h-BN经亚稳相E-BN和wBN向c-BN转变,使得BN薄膜相系统更加混乱,不利于高质量层状h-BN薄膜的获取。     

Graphene and boron nitride lateral heterostructures for atomically thin circuitry

Precise spatial control over the electrical properties of thin films is the key capability enabling the production of modern integrated circuitry. Although recent advances in chemical vapour deposition methods have enabled the large-scale production of both intrinsic and doped graphene, as well as hexagonal boron nitride (h-BN), controlled fabrication of lateral heterostructures in these truly atomically thin systems has not been achieved. Graphene/h-BN interfaces are of particular interest, because it is known that areas of different atomic compositions may coexist within continuous atomically thin films and that, with proper control, the bandgap and magnetic properties can be precisely engineered. However, previously reported approaches for controlling these interfaces have fundamental limitations and cannot be easily integrated with conventional lithography. Here we report a versatile and scalable process, which we call 'patterned regrowth', that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene. We demonstrate that the resulting films form mechanically continuous sheets across these heterojunctions. Conductance measurements confirm laterally insulating behaviour for h-BN regions, while the electrical behaviour of both doped and undoped graphene sheets maintain excellent properties, with low sheet resistances and high carrier mobilities. Our results represent an important step towards developing atomically thin integrated circuitry and enable the fabrication of electrically isolated active and passive elements embedded in continuous, one-atom-thick sheets, which could be manipulated and stacked to form complex devices at the ultimate thickness limit.     

Lattice thermal conductivity of boron nitride nanoribbon from molecular dynamics simulation

The lattice thermal conductivity of boron nitride nanoribbon(BNNR) is calculated by using equilibrium molecular dynamics(EMD) simulation method. The Green–Kubo relation derived from linear response theory is used to acquire the thermal conductivity from heat current auto-correlation function(HCACF). HCACF of the selected BNNR system shows a tendency of a very fast decay and then be followed by a very slow decay process,finally,approaching zero approximately within 3 ps. The convergence of lattice thermal conductivity demonstrates that the thermal conductivity of BNNR can be simulated by EMD simulation using several thousands of atoms with periodic boundary conditions. The results show that BNNR exhibit lower thermal conductivity than that of boron nitride(BN) monolayer,which indicates that phonons boundary scatting significantly suppresses the phonons transport in BNNR. Vacancies in BNNR greatly affect the lattice thermal conductivity,in detail,only 1% concentration of vacancies in BNNR induce a 60% reduction of the lattice thermal conductivity at room temperature.     

脉冲等离子体气相合成氮化硼的研究

以Ｂ２Ｏ３粉扩ＮＨ３为原料，用脉冲等离子体反应器合成ＢＮ，所得产品经Ｘ射线衍射，红外光谱分析表明，产品中除含六方氮化硼外，还含有少量立方氮化硼，生产工艺简单。     

Electrical properties of sulfur-implanted cubic boron nitride thin films

Cubic boron nitride(c-BN)thin films were deposited on Si substrates by applying ion beam assisted deposition and then doped by S ion implantation.To produce a uniform depth profile of S ions in c-BN films,the implantation was carried out for the multiple energies.A slight degradation of c-BN crystallinity resulted from ion implantation can be recovered by thermal annealing,keeping the cubic phase content as high as 92%.The resistance reduces from 1010X for the as-deposited c-BN film to 108X after an S implantation of 5 9 1014ions cm-2and annealing at 1,173 K,suggesting an electrical doping effect of S dopant.The electrical resistance of the S-doped c-BN thin film decreases with increasing temperature,indicating semiconductor characteristics.The activation energy of S dopant is estimated to be 0.28±0.01 eV from the temperature dependence of resistance.     

单壁氮化硼纳米管储氢的理论研究

采用蒙特卡罗方法模拟常温、中等压强下单壁氮化硼纳米管的储氢,重点研究了单壁氮化硼纳米管的管径、管长和手性以及压强对其物理吸附储氢的影响.与单壁碳纳米管的物理吸附储氢相比较,氮化硼纳米管的储氢性能明显优于碳纳米管.计算结果显示,在常温、中等压强下单壁氮化硼纳米管的物理吸附储氢量(质量百分数)可以达到美国能源部提出的商业标准.     

铜纳米颗粒修饰多孔氮化硼高效还原对硝基苯酚的研究

为了寻找高催化活性、环境友好、价格低廉、稳定性好的催化剂,研究金属与载体之间的协同催化效应,采用煅烧前驱体法制备了表面富含羟基和氨基的高比表面积多孔h-BN载体,通过简单的液相还原法成功地制备出粒径分布均匀的Cu/h-BN纳米复合材料,并对复合材料的组成、微观结构和性能进行表征。结果显示,铜纳米粒子的引入并未破坏多孔h-BN的二维片状结构,但比表面积及孔径均有不同程度的下降。以对硝基苯酚(4-NP)还原为对氨基苯酚(4-AP)为模型反应,考察Cu/h-BN复合材料的催化性能,当Cu含量为6%(质量分数)时,复合纳米材料具有最高的催化性能(表观反应速率常数k=4.62×10^-2 s^-1)和稳定性,催化活性在5个循环内基本保持不变。因此,具有高比表面积的h-BN载体负载可稳定Cu纳米颗粒,它们之间的协同催化作用使Cu/h-BN具有优异的催化活性和稳定性。此研究为今后进一步研究金属与h-BN协同催化提供了理论基础。     

锂掺杂对单壁氮化硼纳米管阵列储氢的影响

采用巨正则蒙特卡罗方法,研究了锂掺杂对单壁氮化硼纳米管阵列(SWBNNTA-SingleWalled Boron Nitride Nanotube Array)物理吸附储氢的影响.揭示了锂掺杂是提高SWBNNTA储氢能力的有效手段,并给出了最佳的掺杂方案.计算结果表明,选择最佳的掺杂方案,并合理控制SWBNNTA的结构与尺寸,可使锂掺杂SWBNNTA在常温、中等压强下的物理吸附储氢量达到和超过美国能源部提出的2015年研究目标.