La0.7Sr0.3MnO3外延膜厚度引起的电阻率变化

不同厚度的La0.7Sr0.3MnO3(LSMO)外延薄膜被沉积到立方相的LaA lO3(001)单晶衬底上,XRD测试结果显示,LSMO外延膜的结构是单相的,具有与衬底相同的晶格取向;随着膜厚的增加,LSMO外延膜的晶格经历应变到驰豫的变化.电阻测量显示,应变驰豫的薄膜(较厚的薄膜)有较大的电阻率,这与该膜中缺陷浓度增加有关.此外,也对生长在不同单晶衬底上的LSMO外延膜(厚度相同)的结构和电阻进行了对比研究.     

Co-W磁性薄膜应变对其有效磁晶各向异性能的影响

利用磁控溅射在250℃的MgO(220)单晶基片上先后沉积Cr(100 nm)下底层和不同厚度(9~80 nm)的Co-11%W(原子分数)磁性层,二者取向附生生长关系为Cr(112)[111]∥Co-W(1010)[1210]和Cr(112)[110]∥Co-W(1010)[0001].随着膜厚的增加,Co-W在薄膜面内的压应变(ε0)从0.781 3%减小到0.544 5%,相应地其有效磁晶各向异性能一级常数Ke1ff由3.82×106减小到2.58×106erg/cc.该结果表明通过设计磁性层和下底层之...     

外延生长的SrTiO_3/DyScO_3薄膜的微结构研究

利用激光分子束外延技术在DyScO3(DSO)衬底上异质外延生长了SrTiO3(STO)薄膜.采用原位X射线衍射方法在20~300 K范围内测量了低温下薄膜的热膨胀系数;讨论了应变与晶格失配之间的关系.薄膜的晶格参数在80 K的异常变化可能预示着结构相变的存在.高分辨X射线衍射用来分析样品中存在的两种位错:剪切位错和螺旋位错.结果显示,总的螺旋位错密度要比剪切位错密度大得多.我们认为螺旋位错是样品生长过程中的主要缺陷;剪切位错密度随着样品厚度的增加而增加.这两种位错密度之间的比例关系决定了薄膜的生长模式.     

Enhanced superconducting performance in solution-derived YBCO-BaZrO_3composite film

YBa_2 Cu_3 O_(7-δ)/BaZrO_3(YBCO/BZO) composite film with enhanced flux-pinning performance was prepared on LaAlO_3(LAO) substrate via a fluorine-free sol-gel method in combination with a novel photosensitive sol-gel lithography technique.Owing to the difference of lattice mismatch between the interfaces of YBCO/LAO and YBCO/BZO,high-density stacking faults were successfully introduced into YBCO matrix,which has been confirmed by XRD and HRTEM analysis.Magnetization measurement results indicate that YBCO/BZO composite film has a stronger current-carrying capacity than the pure YBCO film especially under applied magnetic fields.However,the critical current density of YBCO/CeO_2 composite film is much lower than that of the pure YBCO film at all the applied magnetic fields due to the chemical reaction between YBCO and CeO_2.Therefore,it can be concluded that the flux-pinning performance of YBCO film can be improved by the lattice distortions within YBCO matrix as long as the metal oxide microarrays cannot react with YBCO films.     

高介电栅介质ZrO2薄膜的物理电学性能

采用脉冲激光沉积方法在Si衬底上沉积了ZrO2栅介质薄膜,X射线衍射分析表明该薄膜经过450℃退火后低介电界面层得到抑制,仍然保持非晶状态;电学测试显示10 am厚ZrO2薄膜的等效厚度为3.15 nm,介电常数12.38,满足新型高介电栅介质的要求,在-1 V偏压下Al/ZrO2/Si/Al电容器的漏电流密度为1.1×10-4A/cm2.     

Influence of substrate metals on the crystal growth of AlN films

AlN films were deposited by reactive radio frequency (RF) sputtering on various bottom electrodes, such as Al, Ti, Mo, Au/Ti, and Pt/Ti. The effects of substrate metals on the orientation of AlN thin films were investigated. The results of X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy show that the orientation of AlN films depends on the kinds of substrate metals evidently. The differences of AlN films deposited on various metal electrodes are attributed to the differences in lattice mismatch and thermal expansion coefficient between the AlN material and substrate metals. The AlN film deposited on the Pt/Ti electrode reveals highly the c-axis orientation with well-textured columnar structure. The positive role of the Pt/Ti electrode in achieving the high-quality AlN films and high-performance film bulk acoustic resonator (FBAR) may be attributed to the smaller lattice mismatch as well as the similarity of thermal expansion coefficient between the deposited AlN material and the Pt/Ti electrode substrate.     

多铁性La0.7Sr0.3MnO3/PMN-PT复合薄膜的制备及表征

采用溶胶-凝胶法在Pt/Ti/SiO2/Si基片上制备了La0.7Sr0.3MnO3/PMN-PT(LSMO/PMN-PT)复合薄膜,利用X射线衍射(XRD)、原子力显微镜(AFM)、铁电性能综合测试仪、振动样品磁强计(VSM)对样品的结构、表面形貌以及铁电性能、磁性进行了分析.结果表明,LSMO/PMN–PT复合薄膜750℃退火处理后,所有X射线衍射峰均为样品特征峰,无扩散现象,没有新相生成;薄膜表面平整、致密、颗粒分布均匀;复合薄膜表现出了明显的铁电和铁磁性能.     

Ferromagnetism in one-dimensional monatomic metal chains

Two-dimensional systems, such as ultrathin epitaxial films and superlattices, display magnetic properties distinct from bulk materials. A challenging aim of current research in magnetism is to explore structures of still lower dimensionality. As the dimensionality of a physical system is reduced, magnetic ordering tends to decrease as fluctuations become relatively more important. Spin lattice models predict that an infinite one-dimensional linear chain with short-range magnetic interactions spontaneously breaks up into segments with different orientation of the magnetization, thereby prohibiting long-range ferromagnetic order at a finite temperature. These models, however, do not take into account kinetic barriers to reaching equilibrium or interactions with the substrates that support the one-dimensional nanostructures. Here we demonstrate the existence of both short- and long-range ferromagnetic order for one-dimensional monatomic chains of Co constructed on a Pt substrate. We find evidence that the monatomic chains consist of thermally fluctuating segments of ferromagnetically coupled atoms which, below a threshold temperature, evolve into a ferromagnetic long-range-ordered state owing to the presence of anisotropy barriers. The Co chains are characterized by large localized orbital moments and correspondingly large magnetic anisotropy energies compared to two-dimensional films and bulk Co.     

用于薄膜外延生长的单晶基片RHEED研究

利用反射式高能电子衍射仪(RHEED)对微电子技术常用的Si,SrTiO3单晶基片进行了表面结构分析.研究了硅基片的不同清洗工艺对衍射图样的影响,发现衬底的处理工艺非常重要.借助于反射式高能电子的衍射图样和理论分析,计算出与理论值相近的SrTiO3基片晶格常数.结果表明,高能电子衍射仪可以被用于计算生长在基片上的外延薄膜面内晶格常数.     

溅射气压对Ni80Fe20薄膜微结构和各向异性磁电阻的影响

为改善Ni80Fe20薄膜的性能,研究不同溅射气压对薄膜微结构和各向异性磁电阻的影响。用磁控溅射方法制备Ni80Fe20薄膜,用X射线衍射和扫描电子显微镜分析其结构,用四探针方法测量其各向异性磁电阻。实验研究发现,较高的溅射气压下制备的Ni80Fe20薄膜各向异性磁电阻比较低,薄膜磁化到饱和需要的磁场也比较大。在较低的溅射气压(0.2、0.5 Pa)下制备的Ni80Fe20薄膜具有较高的各向异性磁电阻3.7%和4.2%,而且饱和磁化场低(低于1kA/m)。分析结果表明随着溅射气压的变化,Ni80Fe20薄膜的晶格常数、颗粒大小和均匀性等微结构发生变化,导致薄膜的各向异性磁电阻效应差别很大。     

钙钛矿La2/3Pb1/3MnO3外延膜的制备及磁性

利用磁控溅射法在单晶LaAlO3(100)衬底上成功地外延生长了La2/3Pb1/3MnO3薄膜.用X射线衍射仪、原子力显微镜和超导量子干涉仪、直流四探针法对其进行了表征.结果表明,薄膜为赝立方钙钛矿结构,晶格常数为3.861 nm,晶格失配度为2.1%,具有良好的单晶外延结构和较光滑的表面,且薄膜中晶粒的生长模式是"柱状"模式.居里温度为325 K,在居里温度附近,发生铁磁-顺磁转变.此材料呈现出一种典型的自旋玻璃特性.是由于应力造成的.在1.OT磁场下,其磁电阻为23.4%.     

Magnetocrystalline anisotropy and spin-wave stiffness in tensile-strained La0.67Ba0.33MnO3 films: An investigation via ferromagnetic resonance

Tensile-strained epitaxial La_0.67Ba_0.33MnO₃ (LBMO) film has been prepared by magnetron sputtering technique on (001) oriented spinel MgAl₂O₄ substrate. The transport and magnetic measurements give an insulator-metal transition and paramagnetic-ferromagnetic transition occurring at ～150 K and 250 K respectively, which implies the phase separation in such a tensile-strained film. By analyzing the angular and temperature dependences of the ferromagnetic resonance (FMR), we determine the magnetocrystalline anisotropy of the film. It is found that the tensile-strained film is dominated by an easy-axis corresponding to the compressive out-of-plane direction, though the magnitudes of anisotropy constants are relatively small and their temperature dependences are some complex. Furthermore, the FMR spectra show additional spin wave resonance (SWR), and the field positions can be indexed to follow a linear dependence on the square of index n. The scaling gives a spin-wave exchange stiffness D of 20.7 meV Ų at low temperature, which is less than half of that in strain-free LBMO films, implying that the double exchange interaction is remarkably suppressed in the tensile-strained LBMO films.     

钙钛矿La0.67Pb0.33MnO3薄膜的制备及表征

利用磁控溅射法在单晶LaAlO3(100)衬底上成功的外延生长了La0.67Pb0.33MnO3薄膜。用X射线衍射、原子力和超导量子干涉仪、振动样品磁强计对其进行了表征。结果表明,薄膜为赝立方钙钛矿结构,晶胞参数为a=3.861 nm,具有良好的单晶外延结构和光滑的表面。居里温度TC=345 K,在居里温度附近,发生铁磁-顺磁转变。此材料呈现出一种典型的自旋玻璃特性,是由于应力造成的。在室温条件下,当H=0.8T时,磁电阻效应非常明显,此现象是由于固有磁电阻效应引起的,并不是低场磁电阻效应引起的。室温下,其矫顽力只有50奥斯特。     

Strain-induced modulation of magnetic anisotropy in Co/BaTiO_3 composite

A uniaxial magnetic anisotropy Co film was grown on a single-crystal Ba Ti O3（BTO） substrate. The strain yielded by the voltage-induced ferroelastic domain switching in the BTO substrate was recorded by atomic force microscope and modulated the magnetism of the Co film. The manipulation of the magnetism of the Co film is experimentally demonstrated by voltage dependence of magnetic hysteresis loops measured via magneto-optic Kerr effect.     

Al2O3或TiO2掺杂的ScSZ固体电解质纳米晶薄膜的制备及表征

利用溶胶-凝胶旋涂法,在单晶硅基片(100)上分别制得了厚度约为0.31μm的(Al₂O₃)_0.10(Sc₂O₃)_0.08(ZrO2)_0.82和0.36μm的(Sc₂O₃)_0.125(TiO₂)_0.175(ZrO₂)_0.70固体电解质纳米晶薄膜。烧结实验结果表明,两种薄膜均在650℃以上开始晶化,温度越高,晶化越完全,在800℃可完全晶化;所得纳米晶颗粒呈纯的萤石结构立方相;铝和钛掺杂的纳米晶颗粒的平均大小分别为47和51nm。铝掺杂的薄膜非常均匀致密,然而,钛掺杂的薄膜存在少量微气孔。     

掺杂与应力对ZrO2薄膜电子结构和光学性质的影响

利用基于密度泛函理论的第一性原理平面波超软赝势方法系统地研究了掺杂和应力对ZrO_2薄膜的电子结构与光学性质的影响.本文首先研究了Hf原子替代掺杂对ZrO_2薄膜物性的影响,研究结果表明,Hf原子掺杂减小了ZrO_2薄膜的带隙和态密度大小,可在一定程度上降低其表面缺陷电荷和漏电流.掺杂Hf原子后介电峰和吸收峰的值明显下降,同时介电峰和吸收峰的波形均出现了窄化现象,半高宽显著减小.本文也着重研究了不同应力下四方晶相ZrO_2薄膜物理性质变化及规律.研究发现压应力显著调控了ZrO_2薄膜的带隙以及价带顶和导带底附近的能带结构.施加应力后吸收峰的吸收范围和强度均显著增大,峰值对应的光子能量蓝移则表明对紫外光的吸收随着应力的增加有所增强.在低能量红外和可见光区域,施加压应力后ZrO_2薄膜的折射率变大,但在紫外线区域,压应力使ZrO_2薄膜的折射率呈现出先增大后减小的波动特性.上述研究结果为ZrO_2薄膜材料的设计与应用提供了理论依据.     

含He纳米钛膜的XRD研究

本文采用直流磁控溅射方法,在He／Ar混合气氛中,通过分别改变He／Ar流量比和沉积偏压制备不同He含量的钛膜.利用XRD(X-ray diffraction)对含He钛膜的微观结构和晶粒尺寸进行了研究.结果表明,在其它实验参数不变的情况下,当He／Ar流量比从1.0增加到25时,钛膜的平均晶粒尺寸从19.02 nm减小到8.63 nm.随着膜中He含量的增加,衍射峰宽化,晶粒细化,He的掺入有抑制纳米晶粒长大的趋势.而当沉积偏压从24 V增加到151 V时,其平均晶粒尺寸基本不变.He引入引起了（002     

射频磁控溅镀掺杂铜对钛酸锌薄膜中相变化及微结构的影响

探讨了ZnTiO3薄膜掺杂Cu元素对于薄膜性质、相变化与微结构之影响.实验是在一定温度下以射频磁控溅镀系统将铜沉积于ZnTiO3陶瓷靶上,控制沉积于ZnTiO3陶瓷靶上铜含量之后,再沉积掺杂铜的钛酸锌薄膜于SiO2/Si基板上.成长出来的薄膜经由ESCA分析得知铜的质量分数分别为0.84%、2.33%和2.84%.从XRD分析常温下掺杂Cu的ZnTiO3薄膜为非晶质态,经过600℃退火后,ZnTiO3薄膜则由非晶质态转变成Zn2Ti3O8结晶相,而未掺杂铜的ZnTiO3薄膜在600℃退火时并没有结晶相产生.ZnTiO3薄膜经过900℃退火后,Zn2Ti3O8相分解成Zn2TiO4相和TiO2相,且ZnTiO3晶格常数因为Cu离子置换至Zn离子的位置有变小的趋势.由TEM分析证实Cu离子与Zn离子的置换,导致晶格应变产生双晶缺陷.经由XRD、SEM和TEM分析得知掺杂太多的铜会抑制TiO2相的生成,而随着过多的Cu析出,晶体平均晶粒慢慢变小晶格应变也随之降低,以致晶格常数回复往原来晶格常数方向趋近.     

应力对La_(0.8)Ca_(0.2)MnO_3薄膜电输运性能的调控研究

采用脉冲激光沉积技术,在LaAlO3和0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3两种单晶基片上外延生长了La0.8Ca0.2MnO3薄膜.X射线衍射分析表明两种薄膜皆为单取向生长,且面内分别受到压应力和张应力作用.晶格失配造成的应力对薄膜的电阻和金属-绝缘相转变温度Tp影响很大.对LCMO/PMN-PT施加外电场,从而调节薄膜所受应力也可以调制其电阻和Tp.     

利用同步辐射XRD研究BiFeO3 外延多铁薄膜的微结构

使用脉冲激光沉积在SrTiO₃ 衬底上生长了不同厚度的BiFeO₃(BFO)薄膜, X 射线衍射分析表明薄膜是BFO 外延薄膜. X 射线反射率测量发现BFO 薄膜密度随着厚度的增加而增加, 同时薄膜表面存在厚度为数纳米的非设计覆盖层. 随着厚度的增加, BFO 薄膜由完全应变过渡到应变部分弛豫状态, 同时BFO 从四方相转变为单斜相.