Influence of substrate metals on the crystal growth of AlN films |
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| Authors: | Juan Xiong Hao-shuang Gu Kuan Hu Ming-zhe Hu |
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| Affiliation: | (1) On-site Sensing and Diagnosis Research Laboratory, National Institute of Advanced Industrial Science and Technology, 807-1 Shuku, Tosu, Saga 841-0052, Japan;(2) Ube Research Laboratory, Corporate Research & Development, Ube Industries Ltd, 1978-5 Kogushi, Ube, Yamaguchi 755-8633, Japan |
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| Abstract: | AlN films were deposited by reactive radio frequency (RF) sputtering on various bottom electrodes, such as Al, Ti, Mo, Au/Ti,
and Pt/Ti. The effects of substrate metals on the orientation of AlN thin films were investigated. The results of X-ray diffraction,
atomic force microscopy, and field emission scanning electron microscopy show that the orientation of AlN films depends on
the kinds of substrate metals evidently. The differences of AlN films deposited on various metal electrodes are attributed
to the differences in lattice mismatch and thermal expansion coefficient between the AlN material and substrate metals. The
AlN film deposited on the Pt/Ti electrode reveals highly the c-axis orientation with well-textured columnar structure. The positive role of the Pt/Ti electrode in achieving the high-quality
AlN films and high-performance film bulk acoustic resonator (FBAR) may be attributed to the smaller lattice mismatch as well
as the similarity of thermal expansion coefficient between the deposited AlN material and the Pt/Ti electrode substrate. |
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