非晶氧化锡铋薄膜晶体管偏压稳定性的研究

本文通过射频磁控溅射方法,在Si-SiO2衬底上制备了底栅层错型的非晶氧化锡铋(a-SnBiO)薄膜晶体管(TFTs),并表现出优良的开关特性.所制备的a-SnBiO TFTs阈值电压为0.7V,开关比为2.0×107.并且,通过在环境真空中的测试研究了a-SnBiO TFTs的偏压稳定性.研究发现,无论在正偏压下还是负偏压下,a-SnBiO TFTs均展现出了负向阈值电压漂移现象.这是由于沟道层内部缺陷态过多造成,偏压下氧空位相关缺陷电离产生自由载流子,使得沟道层中载流子浓度增加,造成阈值电压向负方向漂移.     

氧流量对a-IWO薄膜及其薄膜晶体管电学性能的影响

本文采用射频磁控溅射方法,制备了非晶掺钨氧化铟(a-IWO)薄膜及其薄膜晶体管(TFTs),并探讨了溅射过程中氧流量对a-IWO薄膜及其TFTs性能的影响.研究发现,随着沉积过程中氧流量的增加,a-IWOTFTs器件的饱和迁移率降低,阈值电压正向偏移,说明溅射过程中氧流量的增加有效抑制了a-IWO沟道层中氧空位的产生,降低了载流子浓度.当溅射过程中氧气/氩气流量比为2∶28时,制备的TFT器件饱和迁移率为27.6cm2·V-1·s-1,阈值电压为-0.5V,电流开关比为108.     

退火对氧化铟镓薄膜晶体管电学特性的影响

研究不同气氛中退火的氧化铟镓薄膜晶体管电学性能随退火温度的变化,并采用霍尔效应测试分析氧化铟镓的载流子浓度(N_c)和迁移率(μ_H)的变化规律,探讨深层次原因。结果表明:退火处理后器件的饱和区场效应迁移率μ_(sat)由1.0 cm~2·(V·s)~(-1)升高至最高12.0 cm~2·(V·s)~(-1),亚阈值摆幅由0.58 V·dec~(-1)(dec代表10倍频程)降至最低0.19 V·dec~(-1),迟滞现象减弱,但阈值电压(V_(th))负向漂移甚至导致器件无法关断;高氧气氛退火可抑制V_(th)负向漂移。此外,N_c和μ_H均随退火温度升高而升高;高氧气氛退火可抑制N_c,这可能与氧在薄膜表面吸附,从而修复氧空位有关;氧气退火能更好地修复薄膜中的缺陷。     

退火温度对铁酸铋薄膜阻变特性的影响

在氧化铟锡衬底上利用溶胶凝胶法,分别在500℃和600℃退火条件下,制备了锰掺杂的铁酸铋薄膜。两种退火温度下制备出来的薄膜均具有典型的钙钛矿晶体结构,但高温退火的薄膜晶粒尺寸要比低温退火的薄膜大。此外,随着退火温度的升高,薄膜的介电常数增大,漏电流也随之增加。通过测量约120个电流电压循环曲线,研究了这两种退火温度下锰掺杂铁酸铋薄膜的阻变效应,发现高温退火下薄膜的阻变性能稳定性要比低温退火的薄膜好。最后,基于氧空位相关的导电丝理论,进一步讨论分析了退火温度对薄膜介电、漏电性能和阻变特性的影响。     

栅介质材料及尺寸对薄膜晶体管性能影响研究

系统地对基于高介电常数材料HfO_2和传统的介质材料SiO_2这两种不同栅介质层材料的硅薄膜晶体管进行建模并对不同尺寸和温度条件下的薄膜晶体管的工作特性进行了研究.获得了不同沟道长度和沟道宽度,不同栅介质层厚度和不同温度条件下的薄膜晶体管的工作特性曲线.通过对比发现,薄膜晶体管的饱和电流与沟道长度和栅介质层厚度成反比,与沟道宽度成正比,与理论计算一致.随着温度的升高,薄膜晶体管的载流子迁移率和阐值电压都在逐渐减小,因而饱和电流值逐渐减小;在相同栅介质层尺寸和温度条件下,基于HfO_2的薄膜晶体管相对于基于SiO_2的薄膜晶体管具有更高的电流开关比,更低的阈值电压和更小的泄漏电流.因此,基于高介电常数栅介质材料的薄膜晶体管相对于基于SiO_2的薄膜晶体管具有更好的性能.     

钒掺杂SrBi_4Ti_4O_(15)拉曼光谱和X射线光电子能谱研究

适量的钒掺杂,大大增加了SrBi4Ti4O15(SBTi)铁电材料的剩余极化2Pr,并改善了材料的耐压性能.SBTi拉曼模的位置,基本不受V掺杂的影响,但对应Ti O6氧八面体的拉曼模在掺杂明显宽化,这与V5 取代进入Ti O6中的Ti4 后,材料局部无序性增大,应力增加有关.X射线光电子能谱表明,不同掺杂量样品的Bi4f和Ti2p的结合能未有明显变化,这与B位高价掺杂减少氧空位的特殊机制有关.材料的2Pr增加,是高价阳离子掺杂导致材料中氧空位浓度的减少,局部无序性的增加共同作用的结果.     

Al和氧空位对ZnO:Co稀磁半导体磁性质的影响

利用基于密度泛函理论的第一性原理计算方法,研究了Al共掺杂和氧空位缺陷对Co掺杂ZnO磁性质的影响,发现Al原子共掺杂引入的自由电子载流子会稳定体系的反铁磁性从而减弱Co原子间的铁磁性交换,而氧空位缺陷束缚的电子载流子对提高体系的铁磁性具有积极的作用.氧空位引入的电子载流子部分转移到Co原子和近邻Zn原子,形成以电子载流子为媒介的Co原子间的耦合作用,稳定体系的铁磁态,增强Co原子间的交换耦合作用.     

铕离子掺杂类普鲁士蓝复合铋膜电极阳极溶出法测定痕量锌

采用预镀铋电化学沉积法制备了铕离子掺杂类普鲁士蓝复合铋膜电极,建立了阳极溶出伏安法测定痕量锌的新方法.结果表明,锌在0.03 mol.L-1的酒石酸钠(pH=4.5)溶液中可得到灵敏的阳极溶出峰;最佳实验条件下,于-1.4 V富集120 s后,锌的溶出峰电流与其浓度在10~540μg.L-1(r=0.99987)范围内呈良好的线性关系,检出限为1.38μg.L-1(S/N=3),相对标准偏差为0.94%(n=8).该法可用于奶制品和药品中锌含量的测定,回收率为99.3%~101.2%.     

非晶Mg-In-Sn-O薄膜晶体管的制备及有源层厚度对其电学性能的影响

制备了Mg-In-Sn-O薄膜晶体管(MITO-TFT)并探究了其电学性能.作为薄膜晶体管有源层的MITO薄膜在室温条件下通过射频磁控溅射沉积在SiO2/p-type Si衬底上.为了优化MITO-TFT的器件性能,研究了有源层厚度对器件性能的影响.结果表明25nm厚度的器件拥有最高的迁移率,为12.07cm2/Vs,同时阈值电压为4.8V,开关比为1.95×106.     

射频功率对MgO掺杂镓锌氧化物薄膜性能的影响（英文）

采用磁控溅射技术制备了MgO掺杂镓锌氧化物薄膜样品,通过X射线衍射(XRD)、电阻率、载流子浓度和Hall迁移率测试分析,研究了射频功率对薄膜样品微观结构和电学特性的影响.实验结果表明,所有样品均为六角纤锌矿结构并具有明显的c轴择优取向生长特点,其微观结构和电学特性与射频功率密切相关.当射频功率为125 W时,所制备薄膜的晶粒尺寸最大为52.1 nm、张应力最小为0.082 GPa、电阻率最低为1.54×10~(-3)Ω·cm、载流子浓度最大为5.26×10~(20)cm~(-3)、Hall迁移率最高为7.41 cm~2·V~(-1)·s~(-1),具有最优的结晶性质和电学性能.     

Na0.54Bi0.46Ti0.96Al0.04O2.94氧离子导体制备与性能研究

采用传统的固相反应法合成Na0.54Bi0.46Ti0.96Al0.04O2.94氧离子导体,借助于交流阻抗谱和介电弛豫谱分别研究了钠和铝的双掺杂对Na0.5Bi0.5TiO3材料电学性能及氧离子扩散的影响。在400℃时,Na0.54Bi0.46Ti0.96Al0.04O2.94材料的晶粒电导率可以达到1.51×10-3 S/cm,是Na0.5Bi0.5TiO3材料电导率的5.5倍。在Na0.54Bi0.46Ti0.96Al0.04O2.94材料中观察到一个与氧离子弛豫相关的介电弛豫峰,弛豫参数为E= 0.80 eV和t0= 6.12×10-13 s,氧离子在Na0.54Bi0.46Ti0.96Al0.04O2.94材料中主要通过Na-Bi-Ti的路径进行扩散迁移的。结合结构参数容忍因子及自由体积的分析,钠和铝的双掺杂改善了氧离子在Na0.5Bi0.5TiO3材料中的扩散通道,但是铝的引入一定程度上提高了氧空位扩散的能量壁垒。     

The development of Bi Fe O3-based ceramics

The multiferroic properties of Bi Fe O3-based ceramics were improved through optimizing their sintering method and doping with certain rare earth elements in pure Bi Fe O3. Some methods, especially liquid-phase sintering method has largely decreased the densities of oxygen vacancies and Fe2in Bi Fe O3-based ceramics, and thus their resistivity became high enough to measure the saturated polarization and the large piezoelectric d33 coefficient under the high electric field of [150 k V/cm. Besides,multiferroic properties were improved through the rare earth elements’ doping in pure Bi Fe O3. Magnetization commonly increases with the proportional increase of Nd,La, Sm and Dy contents up to ＊30 %, while ferroelectric phase can transform to paraelectric phase at a certain proportion. An improved magnetoelectric coupling was often observed at ferroelectric phase with a relatively large proportion. Besides, an enhanced piezoelectric coefficient is expected in Bi Fe O3-based ceramics with morphotropic phase boundaries as they are already observed in thin epitaxial Bi Fe O3 films.     

SnO2(110)表面In掺杂对NO2气敏吸附性能提升的理论研究

为了阐明In的掺杂能提高SnO₂(110)表面气敏性能的反应机制,采用密度泛函理论研究了NO₂分子在In掺杂SnO₂(110)表面的吸附行为. 计算结果表明:In的掺杂可以提高材料表面的导电性,形成具有氧空位的缺陷表面,有利于发生活性氧在表面的预吸附过程. 掺杂的In_5c/SnO₂(110)表面对NO₂表现出良好的吸附性,对NO₂气体的选择性和灵敏度提高的主要原因是In掺杂后氧空位缺陷表面的形成. 此外,活性氧物种的预吸附对材料表面气敏性能的影响取决于NO₂在材料表面的具体吸附位点,其中Sn_5c位点的吸附促使电荷从表面转移到气体分子,导致表面电阻的增大以及氧空位的产生,从而表现出优异的气敏吸附性能.     

少量元素掺杂对Y-Ba-Cu-O强化的影响

近期文献报道了选择满足ABO_3化合物中B位要求条件下的过渡族元素以及其它元素如V,Cr,Bi等,掺入(YBa)CuO_3中,它们可能取代Cu的位置,可以作为“结构探针”引出与其周围O的2p电子,氧缺位以及Cu、稀土离子等相互作用信息的变化,这有助于对超导微观机理的了解;且从少量过渡族元素和其它元素掺杂所带来的变     

Bi2O3氧化物掺杂对单畴YBCO超导块材磁悬浮力的影响

采用顶部籽晶熔渗工艺（TSIG）制备出了配比为Bi2O3：Y2BaCu05=x：（1吨）的系列单畴YBCO超导块材（其中x=0．1,0.3,0．5,0．7,0．9,2,单位为wt％）,并且研究了不同比例的氧化物Bi2O3掺杂对样品的生长形貌、磁悬浮力以及其微观结构的影响．实验结果表明了,Bi20,粒子的掺杂在样品中生成Y2Ba4CuBiOx（YBi2411）纳米粒子从而可以有效地提高样品的磁悬浮性能．当Bi203粒子掺杂量x从0．1wt％（质量分数,下同）增加到0．7wt％时,样品的磁悬浮力从7N增加到25N;当其掺杂量从0．7wt％增加到2wt％时,样品的磁悬浮力从25N降低到6N．该实验结果对于我们进一步研究氧化物掺杂对磁通钉扎作用的影响以及提高YBCO超导块材的性能有着重要的影响．     

Silicon dots films deposited by spin-coating as a generated carrier addition layer of third generation photovoltaics

In this work, silicon ink composing of silicon powder and zinc oxide solution was formulated and spin-coated on quartz and n/p-Si substrates followed by drying the films under atmosphere at the temperature of 550°C. The results showed that this top-addition layer could be the highly promising layer for photo-generating carriers in third-generation photovoltaics to enhance blue-light absorption. X-ray diffraction and scanning electron microscopy techniques were used to study the presence of silicon and zinc oxide nano-crystallites. The thin films consisting of different energy bandgap of Si nanocrystals(～100 nm) with narrow bandgap and spherical Zn O:Bi nanocrystal(～20 nm) with wider bandgap could be obtained from the evidence of bandgap enlargement. The band gaps of the thin films were tunable by adjusting silicon dots density in Zn O:Bi film. Energy upshift of light absorption edge depended on the silicon dots density was observed in the range 1.6–3.3 eV related band gap enlargement by Tauc plot. Under illumination, a high photocurrent gain of the thin film comprised of low Si dots density coated on a quartz substrate was about 10~3 times higher compared with its dark current. This result is agreeably explained in terms of its lower superficial trap states at the interface between silicon and zinc oxide matrix. The composite layer can be applied to a third-generation solar cell with the efficiency 1.50% higher than that with a typical crystalline-Si solar cell.     

White organic light-emitting devices using Zn（BTZ）2 doped with Rubrene as emitting layer

Zn(BTZ)2 was synthesized from the complex reaction between zinc acetate dihydrate and 2-(2-hydroxyphenyl) benzothiazolate. Then Zn(BTZ)2 was used as main light-emitting material doped with different amounts of fluorescent dye Rubrene and fabricated a series of white organic light emitting devices. The configurations were as follows: ITO/PVK:TPD/Zn(BTZ)2:Rubrene/Al. The doping concentration of Rubrene in Zn(BTZ)2 was 1.2%, 0.12%, 0.08% and 0.05%, respectively. According to the EL spectra and CIE coordinates of the above devices, the optimum doping concentration (0.05%, weight percent) had been determined. The steady and bright white light emitting of the device with 0.05% doping concentration had been obtained, and the white emission covered a wide range of driving voltage (10--22.5 V). The CIE coordinates were (x=0.341, y=0.334) at the driving voltage of 20 V, which was very close to the equi-energy point (x=0.333, y=0.333), and the corresponding luminance and external quantum efficiency were 4048 Cd/m^2 and 0.63% (4.05 Cd/A), respectively. Lastly, we also discussed the emitting mechanisms of the material and the devices.     

High-transition-temperature superconductivity in the absence of the magnetic-resonance mode

The fundamental mechanism that gives rise to high-transition-temperature (high-T(c)) superconductivity in the copper oxide materials has been debated since the discovery of the phenomenon. Recent work has focused on a sharp 'kink' in the kinetic energy spectra of the electrons as a possible signature of the force that creates the superconducting state. The kink has been related to a magnetic resonance and also to phonons. Here we report that infrared spectra of Bi2Sr2CaCu2O8+delta (Bi-2212), shows that this sharp feature can be separated from a broad background and, interestingly, weakens with doping before disappearing completely at a critical doping level of 0.23 holes per copper atom. Superconductivity is still strong in terms of the transition temperature at this doping (T(c) approximately 55 K), so our results rule out both the magnetic resonance peak and phonons as the principal cause of high-T(c) superconductivity. The broad background, on the other hand, is a universal property of the copper-oxygen plane and provides a good candidate signature of the 'glue' that binds the electrons.     

高铟闪锌矿在氧压酸浸中铟浸出动力学的研究

铟是一种重要的多用途战略金属,具有较高的工业应用价值,但无独立可供开采的矿床,常伴生于铅锌等硫化矿中.因此,本文在传统电加热条件下进行了高铟闪锌矿氧压酸浸过程中铟浸出动力学实验的研究.结果表明:采用“有固态产物层的液-固相浸出反应动力学模型”对铟浸出动力学进行了研究,可知其浸出速率受到界面化学反应控制,其表观活化能为69.735kJ/mol,以及高铟闪锌矿氧压酸浸过程中铟浸出率随粒度减小、初始酸度增大、氧分压增大、浸出温度增大而增大.     

Bi~(3+)掺杂对YAG:Ce~(3+)荧光粉发光性能的影响

Bi 3+掺杂YAG:Ce3+荧光粉由溶胶凝胶法合成.结构和结晶过程分析表明,其结晶程度良好.光谱分析表明,Bi 3+的掺杂可以使Ce3+的荧光峰位红移.Ce3+的荧光强度随Bi 3+掺杂浓度的增加而增加,这是由Bi 3+与Ce3+之间的能量传递引起的.之后随着掺杂浓度的继续增加Ce3+的荧光强度减小,这是由浓度猝灭所致.