石墨烯薄膜的化学气相法制备及光、电特性研究

利用化学气相沉积方法制备了石墨烯薄膜,并研究了其光电特性。以乙醇做反应原料、氩气作为携载气体,在873 K、973 K、1 073 K的温度下合成石墨烯薄膜。应用光学显微镜观察,发现在1 073 K时能够制备大面积均匀、平整光滑的石墨烯薄膜。纳曼光谱分析结果表明:制备的石墨烯薄膜出现2 650 cm-1的石墨烯的特征峰-D强峰,同时该峰强度随温度的升高而迅速增强,说明低温不能使沉积的碳原子有效的石墨化为石墨烯,而较高的温度有助于乙醇分解并石墨化为石墨烯薄膜。在1 073 K时沉积的石墨烯薄膜具有良好的光、电特性,其电子迁移率可以达到104 cm2.(V.s)-1,光透射率达97%,因此,可用于制备石墨烯晶体管、太阳能电池等光电子器件。     

自持金刚石厚膜上沉积N掺杂ZnO薄膜的生长及电学特性

采用金属有机化合物气相沉积(MOCVD)两步生长法在自持化学气相沉积(CVD)金刚石厚膜的成核面上制备ZnO薄膜, 并研究了薄膜的生长特性和电学特性. 结果表明, 在基片温度为600 ℃时沉积得到的ZnO薄膜表面均匀, 取向较一致, 为c轴取向生长. 其载流子迁移率为3.79 cm²/(V·s).      

沉积温度对PECVD 法制备SiNx 薄膜光致发光峰的影响

SiNx薄膜已经被广泛地应用于晶体硅太阳能电池表面作为减反和钝化膜,所以对SiNx薄膜的光学性质研究很有必要。本文采用等离子体增强化学气相沉积(PECVD)技术,在p型单晶硅(111)衬底上成功地制备了不同温度条件下的SiNx薄膜。室温下,在352 nm光源激发下,每个样品有2个发光位置,所有样品总共观测到了4处不同的发光峰位:390、471、545、570 nm,并且发现温度对390 nm处的发光峰位置无影响。由于杂质的引入在带间形成了局域化的缺陷能级,缺陷态能级和导带以及价带之间的跃迁是其主要的跃迁机制。因此,可以通过控制薄膜的生长条件来控制各个缺陷态密度,从而可以实现氮化硅薄膜在可见光范围内的可控发光。     

铝掺杂氧化锌薄膜的光学性能及其微结构研究

以氧化铝(Al2O3)掺杂的氧化锌(Zn O)陶瓷靶作为溅射靶材,采用射频磁控溅射工艺在玻璃基片上制备了具有c轴择优取向的铝掺杂氧化锌(Zn O:Al)薄膜样品.通过可见-紫外光分光光度计和X射线衍射仪的测试表征,研究了生长温度对薄膜光学性能及其微结构的影响.实验结果表明:薄膜性能和微观结构与生长温度密切相关.随着生长温度的升高,样品的可见光平均透过率、(002)择优取向程度和晶粒尺寸均呈非单调变化,生长温度为640 K的样品具有最好的透光性能和晶体质量.同时薄膜样品的折射率均表现为正常色散特性,其光学能隙随生长温度升高而单调增大.与未掺杂Zn O块材的能隙相比,所有Zn O:Al薄膜样品的直接光学能隙均变宽.     

含氢类金刚石碳膜的拉曼光谱洛伦兹分解

利用射频等离子体增强化学气相沉积(rf PECVD)工艺在不锈钢基底上制备a-C:H膜,利用激光Raman光谱表征所沉积碳膜的微观结构,特别是通过对拉曼谱图进行洛伦兹分解来评价所沉积碳膜的sp3含量,分析了沉积电压和过渡层对a-C:H膜生长过程及膜中sp3含量的影响.结果表明,利用拉曼光谱的洛伦兹分解能够有效分析a-C:H的结构特性,碳膜沉积过程中沉积电压和过渡层对a-C:H膜的生长均具有重要影响.在本实验条件下,以Ti/TiN/TiC为过渡层沉积电压为2500 V时所制备的a-C:H膜中的sp3含量最高.     

Study of titanium nitride for Iow-e coating application

The paper reports our novel work on chemical vapor deposition coating of titanium nitride （TIN） thin film on glass for energy saving. TiN films were deposited on glass substrates by atmospheric pressure chemical vapor deposition （APCVD） using titanium tetrachloride （TiCl4） and ammonia （NH3） as precursors. As a result, TiN films with a thickness of 500 nm were obtained. X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, four-point probe method and optical spectroscopy were respectively employed to study the crystallization, microstructure, surface morphology, electrical and optical properties of the coated TiN films. The deposited TiN films are of NaCI structure with a preferred （200） orientation. The particles in the film are uniform. The reflectivity of the TiN coating in the near-infrared （NIR） band can reach over 40%, the visible transmittance is approximately 60%, and the visible refiectivity is lower than 10%. The sheet electrical resistance is 34.5 Ω. According to Drude theory, the lower sheet resistance of 34.5 Ω gives a high reflectivity of 71.5% around middle-far infrared band. The coated films exhibit good energy-saving performance.     

One-pot hydrothermal synthesis and fabrication of kesterite Cu2ZnSn(S,Se)4 thin films

Kesterite Cu_2Zn Sn(S,Se)_4(CZTSSe)powder was synthesized by a hydrothermal process.The thin films were fabricated by physical vapor deposition of CZTSSe powder followed by a thermal annealing process.The kesterite microstructure was identified by the X-ray diffraction and Raman spectroscopy.The morphology and elemental composition of CZTSSe thin films were also investigated.The dependence of resistance on the temperature of CZTSSe film was measured and the thermal activation energy of conductivity was estimated to be 0.33 eV based on Arrhenius plot of resistance versus temperature.A high absorption coefficient(10~4cm~(-1))of CZTSSe was found in the visible and NIR regions of the spectrum.A direct band gap structure with band gap energy of 1.46 eV was also estimated for CZTSSe films.The photoconductivity was measured under both AM 1.5G and NIR illumination and a stable and fully recoverable photoconductivity was observed for both asdeposited and annealed CZTSSe films.The annealed films show a higher photoconductivity than the as-deposited films under both AM 1.5G and NIR lights.     

集成电路钝化层薄膜的纳米力学性质研究

利用等离子体增强化学气相淀积工艺在P型单晶硅（111）衬底上制备了厚度为70、150、450nm的SiO2薄膜和100、170、220nm的Si3N4薄膜,并使用纳米压入仪对薄膜进行了纳米力学测试与分析．薄膜在不同载荷下的硬度和弹性模量计算采用Oliver-Pharr方法．在测量两种薄膜的硬度时没有发现压痕尺寸效应．SiO2薄膜的弹性模量与压入深度的依赖关系不明显,但与薄膜厚度的依赖关系较明显,薄膜厚度的增加将导致弹性模量显著减小,而Si3N4的弹性模量与薄膜厚度的依赖关系不明显,但与压入深度的依赖关系较明显,会随着压入深度的增加而逐渐增加到某一定值．     

金刚石薄膜自支撑窗口试样的制备与实验研究

以氢气和丙酮为原料，采用电子增强热丝CVD法，在硅片(100)基底上涂覆一层金刚石薄膜，在传统的硅平面加工工艺的基础上发展了一种新的在沉积好的基片上制备自支撑窗口试样的方法，并采用光刻法和湿式各向异性刻蚀技术制备得到金刚石薄膜自支撑窗口试样．研究表明，所制备的金刚石薄膜自支撑窗口的形状比较规则，膜内残留内应力小，能很好地满足鼓泡实验的要求，可以用来定量检测金刚石薄膜膜基界面结合强度和综合评价薄膜力学性能，对于促进金刚石薄膜材料在半导体器件中的应用和推广具有积极的意义．     

Al2O3衬底上多晶硅薄膜的外延和区熔再结晶

研究了陶瓷衬底上多晶硅薄膜的生长和区熔再结晶.利用快速热化学气相沉积(RTCVD)方法,在低成本的Al2O3衬底上沉积了重掺杂的致密多晶硅薄膜,薄膜的晶粒尺寸在微米级.经区熔再结晶(ZMR)后,薄膜的晶粒尺寸有了较大的提高,而且迁移率较高,这样的薄膜可以用作晶体硅薄膜太阳电池的籽晶层.最大的晶粒达到毫米量级,空穴迁移率超过50 cm2·V-1·s-1.在籽晶层上外延的活性层形貌与此类似.这些结果显示这种薄膜在光伏应用方面有较大的潜力.     

氮化硅薄膜的PECVD沉积工艺与绝缘耐压性能

用PECVD法制备氮化硅介质薄膜 ,分析了沉积温度、本底真空度及气体流量比等工艺参数对氮化硅薄膜绝缘耐压性能的影响 ,制备出 0 .4 μm的性能良好的氮化硅介质绝缘膜     

硅和蓝宝石基底上的高Tc薄膜

使用多层沉积和大块沉积两种技术,在硅和蓝宝石的单晶基底上沉积了Yba2XCu3O7高Tc薄膜,实验显示：在硅基底上得到了转变温度为80K的期待结果．     

单靶溅射法制备CIS薄膜

 通过单靶一步溅射再退火的方法,在钠钙玻璃及镀钼玻璃衬底上制备了铜铟硒(CIS)薄膜。通过优化工艺参数,获得了结晶性良好的CIS 薄膜,分析了溅射沉积薄膜时衬底温度及不同退火温度对薄膜结晶性的影响。研究发现,衬底温度为150℃时,退火获得的CIS 薄膜结晶性最好;不同的退火温度对Mo 衬底上的CIS 薄膜结晶性影响不大。结果表明,靶材的致密度对CIS 薄膜性能有较大的影响,说明一步法制备CIS 薄膜对靶材有较高的质量要求。     

An／C_（60）－Polymer／P－Si结构C－V特性

报道了利用ＰＥＣＶＤ技术在Ｐ－Ｓｉ衬底抛光面上淀积含Ｃ６０聚合物薄膜及在薄膜表面蒸金形成Ａｎ／Ｃ６０－Ｐｏｌｙｍｅｒ／Ｐ－Ｓｉ结构．通过常温及温偏处理后的不同Ｃ－Ｖ特性，推算了聚合物薄膜中的几种电荷密度和介电常数，并对经过温偏处理后Ｃ－Ｖ曲线的畸变做了讨论．     

聚四氟乙烯结构氟碳聚合物薄膜的研究进展

聚四氟乙烯结构氟碳聚合物(Polytetrafluoroethylene-like fluorocarbon,PTFE-like FC)薄膜具有超低介电常数、高疏水性和生物相容性等优点.综述了国外制备PTFE-like FC薄膜的实验进展,分析了PTFE-like FC薄膜可能的沉积机理,指出热丝化学气相沉积(HFCVD)和射频等离子体辅助的化学气相沉积(rf-PECVD)这2种方法更有利于减少离子对薄膜表面的轰击作用,被认为是目前沉积PTFE-like FC薄膜最好的2种方法.介绍了利用介质阻挡放电(DBD)方法在低气压下制备PTFE-like FC薄膜的最新进展.     

沉积温度对BC2N薄膜的生长和附着性的影响

应用热丝辅助射频等离子体化学气相沉积法在硅、金刚石衬底上合成了BC2N薄膜,X－射线衍射、红外谱分析表明较高的温度有利于BC2N化合物的成核和生长。高温制备的薄膜的化学组分主要为BC2N,B,C和N原子间互相结合成键,但与硅衬底的附着力很差。选择热膨胀系数与硅接近的金刚石作为过渡层沉积BC2N多层膜,逐层提高生长温度,不仅提高生长温度,不仅提高了薄膜中BC2N的含量,而且提高了薄膜与衬底的粘 附力。     

CVD法制备SiO2薄膜工艺条件的研究

在Al2 O3 陶瓷基片上以正硅酸乙酯 (TEOS)为原料 ,高纯氮气作载气 ,采用低压冷壁式设备和化学气相沉积(CVD)方法制备SiO2 薄膜 ,研究了基片温度、TEOS温度和沉积时间对SiO2 薄膜沉积速率的影响 .采用XRD ,XPS和SEM技术对SiO2 薄膜的组成和结构进行了分析     

Surface characteristics and corrosion resistance of biodegradable magnesium alloy ZK60 modifi ed by Fe ion implantati on and deposition

The ZK60 magnesium alloy has been modified by Fe ion implantation and deposition with a metal vapor vacuum arc plasma source. The surface morphology, phase constituent and elemental distribution are determined by scanning electron microscopy, transmission electron microscopy, X-ray diffractometer and Auger electron spectroscopy. The results show that Fe thin film is deposited on ZK60 alloy and the corresponding thickness increases from 2.73 μm to 6.36 μm with increasing deposition time. A transition layer mainly composed of Mg, Fe and O elements is formed between Fe thin film and ZK60 substrate. The potentiodynamic polarization tests reveal that a high corrosion potential and a low corrosion current density are detected for the Fe deposited ZK60 alloy, indicating the improvement of corrosion resistance. The tensile deformation test indicates that the Fe deposited film on the ZK60 substrate can sustain 1% tensile strain without any cracks.     

沉积温度对VC纳米薄膜摩擦学性能的影响

采用磁控溅射技术沉积碳化钒(VC)纳米薄膜, 研究温度对VC薄膜的微观结构、 力学及摩擦磨损性能的影响, 并分析其内在关系. 结果表明, 沉积温度升高对VC薄膜的相结构和摩擦系数影响较小, 有利于降低薄膜中的应力和粗糙度, 可提高薄膜的硬度.     

Magnetoresistance of the thin film ferromagnetic nanoconstrictions

The magnetoresistance and I-V characteristics at different temperatures of the thin film ferromagnetic nanoconstrictions of variable width (from 20 to 250 nm) and 10 nm thicknesses, fabricated by electron beam lithography and vacuum thin film deposition are compared. The magnetoresistance and resistance of the thin film ferromagnetic nanoconstrictions are not related to the width of the nanoconstrictions. Instead the resistance of the local nano-region in the middle of the thin film ferromagnetic nanoconstriction has only a minor role compared to that of the two microscale thin film ferromagnetic electrodes, which contribute the majority of the measured resistance. The magnetoresistances of the thin film ferromagnetic nanoconstrictions and a 0.2 cm × 0.8 cm thin ferromagnetic film deposited under the same conditions were also compared; the thin film ferromagnetic nanoconstrictions have higher magnetoresistances than the thin ferromagnetic film, which implies that the measured magnetoresistance of the thin film ferromagnetic nanoconstrictions comes mainly from the local nano-region in their centers. In conclusion, the measured magnetoresistance of the whole sample is similar to the anisotropic magnetoresistance, because the resistance of the two microscale thin film ferromagnetic electrodes is much higher than that of the local nano-region in the middle of the samples. Comparing the experimental results for the thin film ferromagnetic nanoconstrictions and the thin ferromagnetic film reveals that the magnetoresistance of the local nano-region in the middle of the sample is much higher than that of the two microscale thin film ferromagnetic electrodes attached to it.