甲烷通气速率/通气量对大量合成SiC一维纳米材料的影响规律

采用化学气相反应法（CVR）,以球磨后的Si粉、SiO2粉及CH4气体为原料,镍为催化剂,在1 250℃下成功制备出大量SiC一维纳米材料.着重研究了甲烷通气速率/通气量对产物宏观产量、微观形貌的影响规律.采用扫描电镜（SEM）、透射电镜（TEM）、X射线衍射（XRD）等多种测试手段对所得产物进行了表征.结果表明：随CH4通气速率/通气量的减少,产物宏观颜色由深蓝色转变成灰白色,纳米线直径变得不均匀,纳米线的堆积密度逐渐增大.在通气速率为0.054 L·min-1、通气时间36 min、通气量1.4L优选工艺条件下,所制备的一维纳米材料为带有少许非晶SiO2包覆层的立方结构的β-SiC.     

一种无金属催化辅助生长SiC纳米线的机制

采用扫描电镜、能谱、X-射线衍射及透射电镜等技术分析了一种无金属催化辅助下制得的SiC纳米线的生长过程及生长机制.结果表明:在生长初期SiC纳米线端部就形成凝固熔滴.凝固熔滴在随后的纳米线择优沿[111]方向生长过程中不断地向前推进.凝固熔滴中除了含有Si和C以外,还含有O.SiC纳米线的生长机制因属于气-液-固机制,反应气氛中的氧代替金属催化剂参与了SiC纳米线的形核及生长.     

ZnS和C60纳米线阵列的构筑和表征

以多孔氧化铝为模板,通过水热反应制备出ZnS 和 C₆₀纳米线阵列,分别用透射电子显微镜(TEM)、扫描电子显微镜(SEM)、X射线衍射(XRD)、拉曼光谱以及选区电子衍射图谱(SAED)等,对纳米线阵列形貌和化学成分进行表征.结果表明,ZnS 和C₆₀纳米线均为有序阵列.ZnS纳米线为多晶结构,在波长332 nm紫外光激发下, 发射519 nm特征荧光.同时介绍了水热条件下,在多孔氧化铝模板中填充目的产物,以及制备纳米线有序阵列的相关过程.该方法具有一定的普适性.     

无掩模选择性制备硅纳米线阵列及其光致发光

基于金属辅助硅化学刻蚀发展了一种无掩模选择性区域制备硅纳米线阵列的方法, 并利用该方法成功制备了图形化的硅纳米线阵列. 扫描电子显微镜(scanning electron microscope, SEM) 分析表明, 所制备的硅纳米线阵列是高质量的多孔微纳米结构, 并利用拉曼光谱仪研究了室温下硅纳米线阵列的光致发光特性. 结果表明, 硅纳米线阵列可实现有效的光发射, 发光波峰为663 nm. 该方法工艺简单、有效, 可潜在地应用于构筑硅基光电集成器件.     

以DNA为模板Pd纳米线的电化学制备及其性质

以DNA为模板,采用电化学方法制备出Pd纳米线,通过透射电镜(TEM)和X-射线衍射(XRD)对产物进行了表征,得到粒径大约50nm、长度3.0 um的Pd纳米线.同时讨论了不同实验条件对纳米线结构的影响,并对所制备出的纳米线的电化学性质进行了探讨,对H2O2具有催化响应.     

磷酸处理氧化铝模板对Ag纳米线形貌的影响

以磷酸超声处理的多孔阳极氧化铝为模板,用乙二醇在模板的纳米孔道内还原Ag+制备Ag纳米线.用X射线衍射光谱(XRD)、透射电子显微镜(TEM)等检测手段对产物进行了表征,并与未处理的多孔阳极氧化铝为模板在相同条件下制备的样品进行了比较.结果表明,用磷酸处理氧化铝模板后得到的Ag纳米线具有更大的长径比,所得Ag纳米线具有面心立方的晶体结构,长度大于5μm,单体纳米线的直径大约为60 nm.     

放电等离子烧结制备Cu/Ti3SiC2-TiC复合材料

选用单质粉(Ti,Si,C,Al)为原料,采用机械合金化法制备含有Ti3SiC2和TiC的混合粉体,然后将Ti3SiC2,TiC和Cu的混合粉体进行放电等离子烧结,以制备Cu/Ti3SiC2-TiC复合材料,并对其组织耐磨性进行了研究。实验结果表明,放电等离子烧结可制备致密的Cu/Ti3SiC2-TiC复合材料,复合材料的显微硬度随强化相(Ti3SiC2-TiC)掺加量的增加显著提高,当强化相掺加量为20 vol%时,复合材料的硬度值达1.58 GPa。Cu/Ti3SiC2-TiC复合材料的耐磨性随强化相含量增加显著提高,当强化相掺入量为20 vol%时,复合材料的耐磨性为纯Cu的4倍。     

高活性碳氮共掺杂二氧化钛纳米线的制备与应用

一维纳米线(尤其是非金属掺杂的一维纳米线)具有电荷移动速度快和载流子复合率低的特点,其在温和条件下的制备备受关注.以硫酸钛为钛源、异丙醇为保护剂水热法制备了碳掺杂及碳氮共掺杂两种Ti O2纳米线,并进行了XRD、SEM、HRTEM、SAED、XPS、BET和UV-Vis等表征.结果表明,经500℃煅烧得到的碳氮共掺杂Ti O2纳米线含有Ti O2(B)和锐钛矿相,并在600℃时完全转变为锐钛矿相;在可见光激发下,相比于碳氮共掺杂纳米颗粒和碳掺杂纳米线,制备的碳氮共掺杂纳米线对阿特拉津的降解效果更好.原因在于:其一,碳和氮的引入有缩短催化剂价带、有效分离光生电子空穴和增加光生电子等作用;其二,600℃以上煅烧能延长锐钛矿到金红石的转化温度,避免产生催化活性低的金红石相.     

高取向硼纳米线列阵

一维纳米材料(纳米线和纳米管)是能有效传输电子和各种激子的最小维数结构, 因此是构筑纳米电子和纳米机械器件的基本组元. 采用射频磁控溅射方法, 以Ar气为溅射气体, 纯硼粉和氧化硼粉为靶材, 合成了直径在20~80 nm的硼纳米线, 这些硼纳米线在基片上自组织成垂直生长的高取向列阵, 具有大面积、高密度而离散、均匀性好、平行排列、高定向生长的特点. 它的独特特点是具有平台式顶部形貌, 详细的结构和成分研究表明硼纳米线具有非晶结构. 在合成硼纳米线及其高取向列阵的过程中, 没有涉及到任何的模板和金属触媒. 相信硼纳米线——一维纳米材料系统中的新成员, 会具有很多新奇、有趣、有用的独特性能. 提出了一种汽-团簇-固(VCS)机制来解释硼纳米线的形成.     

银纳米线与氧化石墨烯复合物的制备及其抗菌性能研究

为了获得具有良好抗菌活性的材料,制备氧化石墨烯与银纳米线的复合材料.通过透射电子显微镜、扫描电子显微镜、傅里叶变换红外光谱仪、紫外-可见光谱、X射线衍射和X射线光电子能谱对制备的氧化石墨烯、银纳米线和氧化石墨烯与银纳米线复合材料进行表征.以大肠杆菌为试验菌株进行抗菌性能试验.结果表明,氧化石墨烯与银纳米线复合材料具有明显的抗菌作用.从氧化应激理论和膜损伤理论等方面探讨了抗菌材料的抗菌机制.以DMPO(5,5-二甲基-1-吡咯啉-N-氧化物)和TEMP(2,2,6,6-四甲基哌啶)为捕获剂,采用ESR方法分别测定了材料在光照射下产生的3种活性氧(O·-2,1 O2,·OH),并采用扫描电镜法观察大肠杆菌的微观形态.     

金属辅助化学刻蚀法制备尺寸可控的硅纳米线

为制备粗细均匀、大长度的硅纳米线,通过金属辅助化学刻蚀方法,以银作为辅助金属,利用场发射扫描电镜(FESEM)和FIB/SEM双束系统作为检测手段,结合微加工工艺,研究了不同的反应离子刻蚀时间和化学刻蚀时间对制备的硅纳米线的尺寸和形貌的影响。结果表明,通过该方法制备的硅纳米线粗细均匀、长度较大。控制反应离子刻蚀时间和化学刻蚀反应时间,可以控制硅纳米线的形貌与尺寸。     

溶胶-凝胶工艺对SiC粉体形貌的影响

以正硅酸乙酯(TEOS)和活性炭为原料,采用溶胶-凝胶法制备SiC前驱体,经1 400~1 600℃高温碳热还原反应合成了纯度较高的-βSiC粉体,这种粉体是由颗粒和晶须组成的混合物.通过前驱体的热重(TG)-差热(DSC)曲线分析了前驱体的热分解过程,通过X射线衍射(XRD)曲线分析了不同合成温度下的产物组织结构,并研究了无水乙醇(EtOH)与正硅酸乙酯的体积比和氨水浓度对产物形貌的影响,初步探讨了SiC颗粒和晶须的形成机理.     

Purity of SiC powders fabricated by coat-mix

Silicon carbide powders were synthesized by the coat-mix process, with phenolic resin and silicon powders as starting materials. The effects of synthetic conditions, including sintering temperature and the molar ratio of resin-derived carbon to silicon on the composition and the purity of the resultant powders were investigated. The results show that a higher sintering temperature and an appropriate molar ratio of resin-derived carbon to silicon are favorable for producing high purity silicon carbide powders. It is found that the silicon carbide content increases slightly with increasing the sintering temperature during the solid-solid reaction. The temperature gradient plays an important role on this trend. When the sintering temperature is raised up to 1500℃, the formation of silicon earbide is based on the liquid-solid reaction, and high purity (99.8wt%) silicon carbide powders can easily be obtained. It can also be found that the optimum molar ratio of resin-derived carbon to silicon is 1:1.     

Microwave absorption properties of SiC@SiO2@Fe3O4 hybrids in the 2–18 GHz range

To enhance the microwave absorption performance of silicon carbide nanowires (SiCNWs), SiO2 nanoshells with a thickness of approximately 2 nm and Fe3O4 nanoparticles were grown on the surface of SiCNWs to form SiC@SiO2@Fe3O4 hybrids. The microwave absorption performance of the SiC@SiO2@Fe3O4 hybrids with different thicknesses was investigated in the frequency range from 2 to 18 GHz using a free-space antenna-based system. The results indicate that SiC@SiO2@Fe3O4 hybrids exhibit improved microwave absorption. In particular, in the case of an SiC@SiO2 to iron(III) acetylacetonate mass ratio of 1:3,themicrowave absorption with an absorber of 2-mm thickness exhibited a minimum reflection loss of?39.58 dB at 12.24 GHz. With respect to the enhanced microwave absorption mechanism, the Fe3O4 nanoparticles coated on SiC@SiO2 nanowires are proposed to balance the permeability and permittivity of the materials, contributing to the microwave attenuation.     

Microwave absorption properties of SiC@SiO_2@Fe_3O_4 hybrids in the 2–18 GHz range

To enhance the microwave absorption performance of silicon carbide nanowires(SiCNWs), SiO_2 nanoshells with a thickness of approximately 2 nm and Fe_3O_4 nanoparticles were grown on the surface of SiCNWs to form SiC@SiO_2@Fe_3O_4 hybrids. The microwave absorption performance of the SiC@SiO_2@Fe_3O_4 hybrids with different thicknesses was investigated in the frequency range from 2 to 18 GHz using a free-space antenna-based system. The results indicate that SiC@SiO_2@Fe_3O_4 hybrids exhibit improved microwave absorption. In particular, in the case of an SiC@SiO_2 to iron(III) acetylacetonate mass ratio of 1:3, the microwave absorption with an absorber of 2-mm thickness exhibited a minimum reflection loss of-39.58 d B at 12.24 GHz. With respect to the enhanced microwave absorption mechanism, the Fe_3O_4 nanoparticles coated on SiC@SiO_2 nanowires are proposed to balance the permeability and permittivity of the materials, contributing to the microwave attenuation.     

工艺参数对反应烧结碳化硅导电性的影响

对碳化硅颗粒尺寸,工艺参数与反应烧结碳化硅导电性的关系进行了研究,试验结果表明,随着碳化硅颗粒尺寸的减小,生坯成型压力增加,烧结气氛压力增大,碳化硅电阻率也增大,且烧结温度对电阻率的影响不大,同时,对不同烧结工艺下显微结构与电阻率的关系进行了分析讨论。     

The influence of the surface migration of gold on the growth of silicon nanowires

Interest in nanowires continues to grow, fuelled in part by applications in nanotechnology. The ability to engineer nanowire properties makes them especially promising in nanoelectronics. Most silicon nanowires are grown using the vapour-liquid-solid (VLS) mechanism, in which the nanowire grows from a gold/silicon catalyst droplet during silicon chemical vapour deposition. Despite over 40 years of study, many aspects of VLS growth are not well understood. For example, in the conventional picture the catalyst droplet does not change during growth, and the nanowire sidewalls consist of clean silicon facets. Here we demonstrate that these assumptions are false for silicon nanowires grown on Si(111) under conditions where all of the experimental parameters (surface structure, gas cleanliness, and background contaminants) are carefully controlled. We show that gold diffusion during growth determines the length, shape, and sidewall properties of the nanowires. Gold from the catalyst droplets wets the nanowire sidewalls, eventually consuming the droplets and terminating VLS growth. Gold diffusion from the smaller droplets to the larger ones (Ostwald ripening) leads to nanowire diameters that change during growth. These results show that the silicon nanowire growth is fundamentally limited by gold diffusion: smooth, arbitrarily long nanowires cannot be grown without eliminating gold migration.     

碳化硅纳米管几何结构和应变能的理论研究

本文采用密度泛函方法研究了碳化硅纳米管的几何结构和相对于3C-SiC的应变能。研究结果表明：1）碳化硅纳米管中的碳原子和硅原子分布在不同直径的两个圆柱面上，碳原子所在圆柱面的直径比硅原子的大，随着纳米管直径的增加这两个圆柱面的直径差别减小；2）在椅型和锯齿型碳化硅纳米管中均存在着长度不相等的两种共价键，随着纳米管直径的增加这两种共价键的键长趋于一致；3）碳化硅纳米管相对于3C-SiC的应变能均大于0．6eV，因此它是一种亚稳态，在适当的条件下有可能合成单壁碳化硅纳米管，但是其结构比较容易向闪锌矿结构转变．     

碳/碳复合材料的渗硅抗氧化复盖层

在碳/碳复合材料上渗硅可得到碳化硅复盖层。对不同渗硅温度和时间下得到的碳化硅层进行破坏性试验。实验指出,有碳化硅复盖层保护下的碳/碳复合材料,其抗氧化性能提高约2个数量级。     

In_2O_3准一维纳米结构的可控制备研究

以In2O3和活性炭混合物为蒸发源,利用化学气相沉积法在硅衬底上制备了In2O3纳米线.对In2O3纳米线的生长机理进行讨论,认为在衬底表面维持一定的氧化铟基团浓度是导致出现In2O3纳米线的原因,因此可以通过调节氧化铟基团的浓度去控制准一维In2O3纳米结构的生长.