基于Pt电极的TiO2紫外探测器研究

针对宽禁带半导体紫外探测器响应不够灵敏和响应度偏低等问题,将具有高功函数的Pt电极引入TiO₂紫外探测器,采用溶胶凝胶法制备了纳米TiO₂薄膜。以金属Pt为电极,采用磁控溅射的方法,将Pt电极溅射在TiO₂纳米薄膜上,制作了MSM (Metal Semiconductor Metal)型紫外探测器件。在5 V偏压下,探测器的暗电流为4.5 nA,260 nm波长光照下的光电流为5.7 μA。在260 nm的紫外光照射下,探测器的响应度达到最大值,约为447A/W,与其他紫外探测器（200 A/W左右）的响应度均值相比有了很大的提升。最后,设计外围电路,制作出功能完整的紫外强度测试仪。实验表明,该探测器成功地解决了传统宽禁带半导体紫外探测器灵敏度及响应度偏低等问题。     

热氧化法制备 TiO2薄膜电极及其光电流性能

采用热氧化钛片的方法制备了TiO2薄膜电极,然后利用X射线衍射（XRD）、扫描电子显微镜（SEM）、荧光光致发光（PL）、拉曼光谱（Raman）、光电流和光电压等实验技术进行表征,考察了不同热处理温度对薄膜的形貌、晶相结构、光学性质和光电流性能等的影响．结果表明：随着热处理温度由3000C提高到600℃,在钛片表面上逐步生成晶粒细小、多孔且荧光强度逐渐降低的纯金红石TiO2薄膜,并可获得分别为0．154mA／cm2和0．3V的最大阳极光电流和光电压,而继续增大热处理温度虽有助于氧化膜的形成,但光电流和光电压则急剧减小．因该热处理方法具有操作简单、生成的表面膜与基底的附着性好且光电性能稳定等特点,使其在TiO2膜电极制备方面有较好的应用前景．     

Mechanism of photocatalytic degradation of dye MG by TiO<Subscript>2</Subscript>-film electrode with cathodic bias potential

Photoelectrocatalytic degradation of malachite green (MG) under visible light irradiation with TiO2-film electrode has been investigated to reveal the mechanism for TiO2 photocatalytic degradation of dyes. The supported TiO2 electrode was prepared in laboratory and detected by scanning electron micros-copy and X-ray diffractometry. We have examined the degradation kinetics, change in degradation rate of MG and photocurrent change with the bias potential, voltage-induced adsorption of dyes, accumu-lation of ...     

High sensitivity, fast speed and self-powered ultraviolet photodetectors based on ZnO micro/nanowire networks

Ultraviolet(UV) photodetectors(PDs) based on ZnO micro/nanowire(MNW) networks with Pt contacts have been fabricated on glass substrates. The PDs exhibited a high photosensitivity(5 103) for 365 nm UV light with a fast recovery time(0.2 s) at a reverse bias voltage of 2 V. The light induced modulation of Schottky barrier and MNW–MNW junction barrier was employed to account for the results. It was also observed that the PD had a high on–off ratio of 800 without external bias. The photovoltaic effect was proposed to explain the self-powered phenomenon.     

Plasmonic coupling in single flower-like gold nanoparticle assemblies

Localized surface plasmon resonance (LSPR) arises when light interacts with metallic nanoparticles (NPs). When nanoparticles (NPs) assemble together, the plasmon coupling effect between the NPs often leads to new features in the LSPR of the assembled structure. Understanding the plasmon coupling in the complex assemblies will greatly benefit the development of new plasmonic devices. Here we demonstrate the fabrication of a 3D structure using two different sized Au NPs as building blocks. This 3D structure was achieved by manipulating the binding efficiency of ligands linking the NPs, and proper choice of the NP size. The assembled structure is flower-like structure, with one 130 nm Au NP in the center, and several 40 nm Au NPs attaching as “petals”. Single particle dark-field scattering measurements of the individual assemblies were performed, together with electrodynamics simulations. The experimental and theoretical studies show that, the plasmonic coupling lead to broadening of the LSPR and additional peaks, depending on the number and 3D arrangement of the 40 nm NPs around the center 130 nm NP.     

TiO2/P3HT复合太阳能电池的制备和性能研究

用简单易行的一步水热法在透明导电玻璃FTO上制备了直径、密度及取向可控的TiO2纳米阵列,FTO同时作为底电极,用旋涂法将有机P型聚合物P3HT复合到阵列表面,磁控溅射制备Pt电极,组装TiO2/P3HT有机无机复合太阳能电池.通过XRD、SEM、紫外-可见光谱仪、I-V/J-V特性曲线等表征TiO2阵列薄膜及器件的结构、形貌和光电特性.研究制备TiO2纳米阵列的水热时间及无水乙醇的量对薄膜质量及复合太阳能电池光电性能的影响.通过优化各项参数,FTO/TiO2/P3HT/Pt简单双层结构的光器件在AM1.5,光强100mW/cm2下开,路电压Voc达到0.50V,光电转换效率IPCE达到0.11%.     

退火温度对磁控溅射Ti02薄膜结构及性能的影响

采用对向靶磁控溅射法在FTO导电玻璃基底上制备了Ti02薄膜,分别在450℃、500℃和550℃条件下对Ti02薄膜进行退火处理;利用X射线衍射（XRD）和扫描电镜（SEM）测试手段分析了不同退火温度对TiO,薄膜晶体结构与表面形貌的影响以异丙醇（iso—propanol,IPA）为目标物,研究了所制备Ti02薄膜的光催化性能,并分析了该气相光催化反应机理．同时在氙灯照射下,测试了Ti02薄膜的光电流以分析其光电性能．结果表明：当退火温度由450℃升至550℃时,Ti02薄膜由纯锐钛矿结构转变为金红石与锐钛矿型混晶结构,其表面形貌则变化不大;Ti02薄膜光催化性能与光电性能均随退火温度的升高而提高,经550℃退火的Ti02薄膜可将IPA高效降解为丙酮和C02,其光电流可达0．7mA并保持稳定．     

二氧化钛修饰电极的光伏特性研究

二氧化钛修饰电极的光伏特性研究方靖淮（南通师范专科学校，南通２２６００７）顾建华陆祖宏（东南大学分子与生物分子电子学开放研究实验室，南京２１００１８）用有机染料和窄禁带半导体修饰敏化宽禁带半导体以增加太阳光的利用率是太阳能电池研究的一个重要领域．在...     

在电子传输层中掺杂二氧化钛纳米粒子来提高反式钙钛矿太阳电池的效率

基于CH3NH3PbX3 (X=Cl, Br, or I)材料的钙钛矿太阳电池由于其简单的制作工艺和较高的光电转化效率在近年来吸引了大量的研究。该文报道了在电子传输层（PCBM层）中掺杂二氧化钛纳米粒子从而提高了反式结构钙钛矿太阳电池的性能。通过掺杂二氧化钛纳米粒子,使电子传输层的能级和钙钛矿层的能级更加匹配,从而改善了电子的传输和收集并抑制了正负电荷复合,提高了钙钛矿太阳电池的短路电流密度和填充因子。光电转化效率从原来的12.1%提高到了13.5%。我们的结果表明,在PCBM层掺杂二氧化钛纳米粒子是一种简单有效的提高钙钛矿太阳电池的性能的方法。     

GaN金属-半导体-金属紫外光电探测器的研制

用金属有机物化学汽相沉积(MOCVD)方法在蓝宝石衬底上制备了GaN单晶薄膜,并对样品进行X射线衍射和光致发光谱测量.利用GaN样品成功地制备了金属-半导体-金属(MSM)结构GaN紫外光电探测器,并对其I-V特性、光谱响应及击穿电压等性能进行测试和分析.结果表明,探测器在-5 V偏压下的光电流与暗电流之比大于400倍;探测器光响应在352 nm附近达到响应峰值,并在364 nm附近出现截止,即具备可见盲特性;器件的光响应度最好达0.21A/W.     

顺序离子束溅射沉积制备GdAlO3单一晶相薄膜技术

顺序沉积薄膜制备技术包括前驱薄膜制备和后期薄膜热处理技术，特别适合复杂组分的薄膜制备．采用IM100离子束材料芯片沉积仪在MgO(100)基片上顺序沉积Gd2O3和Al单层薄膜，经后续低温扩散和高温晶化两步热处理得到GdAlO3单一晶相薄膜．以X射线衍射(XRD)、扫描电镜(SEM)等手段，分析所得GdAlO3薄膜的晶体结构和微观形貌，考察热处理过程对GdAlO3薄膜生长过程及微观结构的影响．实验结果表明顺序沉积薄膜制备技术具有化学计量比控制精确的优点，两步热处理可以得到结晶状况良好的单相结晶薄膜．     

Sol-Gel Preparation of TiO2/SiO2 Nanocomposites and Their Application in Self- cleaning Textiles

The present study involves the preparation of TiO2/SiO2 nanocrystals and their application in self-clcaning wool-polyester fabrics. The TiO2/SiO2 nanocrystals were successfully synthesized and deposited onto wool-polyester fabrics using the low-temperature sol-gel technique. The as-prepared nanoeomposites and the nanocomposites coated samples were characterized by X-ray diffraction （XRD） and scanning electron microscopy （SEM）, respectively. The XRD and SEM results showed that the single-phase anatase nanocrystallites were formed and loaded on the fabric surface successfully. The photocatalytic activities of TiO2 -coated and TiO2/SiO2-coated wool-polyester fabrics were measured by studying photodegradation of methylene blue dye. Comparison of the photocatalytic activity of the coated samples reveals superiority of TiO2/SiO2 modified sample with respect to that of pure TiO2 modified sample. Our observations indicate that by applying this technique to the fabrics, self-cleaning materials can be designed for practical application.     

Preparation and Characterization of TiO_2 Nanotubes Decorated by CuO and CeO_2 Particles

A novel catalyst, TiO_2 nanotubes(TiO_2 NTs) composite decorated by CuO and CeO_2 particles, was prepared by a simple and cost-effective method. The TiO_2 NTs were fabricated by the hydrothermal method, and CuO and CeO_2 particles loaded onto TiO_2 NTs(CuO/CeO_2@TiO_2 NTs) were prepared by the water bath heating method. The CuO/CeO_2@TiO_2 NTs were investigated and characterized by transmission electron microscope(TEM), energy dispersive spectrometer(EDS), photoluminescence(PL), X-ray diffractometer(XRD) and ultraviolet-visible light diffuse reflectance spectrum(UV-Vis DRS). Both the p-n heterojunction formed at the p-CuO and n-TiO_2 interfaces and the highly induced electron transfer of CeO_2 can greatly promote the separation of electrons-holes. Therefore, CuO/CeO_2@TiO_2 NTs show enhanced absorption and have potential applications in photocatalysis.     

Enhanced resistive switching properties of HfAlOx/ZrO2- based RRAM devices

Resistive Random-Access Memory (RRAM) devices are recognized as potential candidates for next-generation memory devices, due to their smallest cell size, high write/erase speed, and endurance. Particularly, the resistive switching (RS) characteristics in oxide materials have offered new opportunities for developing CMOS-compatible high-density RRAM devices. In this study, the RS behavior of HfAlO_x/ZrO₂ thin films sandwiched structure between TiN bottom electrode and Au top electrodes were investigated. It was found that Au/HfAlO_x/ZrO₂/TiN stacks were superior in terms of RS performance when compare to Au/HfAlO_x/TiN memory stacks. The devices demonstrated a good resistance ratio of high resistance state and low resistance state ～10³ for Au/HfAlO_x/TiN and ～10⁵ for Au/HfAlO_x/ZrO₂/TiN stacks, respectively. Both stacks showed good retention characteristics (>10⁴ ?s) and endurance (>10³ cycles). The experimental current-voltage characteristics fitted with different conducting mechanisms, the linear lower bias region is dominated by ohmic conductivity, whereas the non-linear higher bias region was dominated by space-charge limited current conduction mechanism.     

Formation of crystalline TiO2 by anodic oxidation of titanium

Formation of crystalline TiO2(anatase) films by anodic oxidation of titanium foils in ethylene glycol(EG) based electrolytes at room temperature has been investigated.By varying the anodizing parameters such as the amounts of water and NH4 F added,applied voltage and anodization time,anodic TiO2 films with different crystalline structures were obtained.Scanning electron microscopy(SEM),transmission electron microscopy(TEM),and X-ray powder diffraction(XRD) characterizations were employed to determine the morphologies and crystalline structures of as-prepared anodic TiO2 films.The results indicate that crystallization of anodic TiO2 films was generally facilitated by high fluoride concentration,high applied voltage and longer anodization time,and the formation of anodic TiO2 films with best crystallinity could only be achieved when optimized amounts of water were added.     

CTAB微乳体系低温合成纳米TiO_2及其光催化性能的研究

采用十六烷基三甲基溴化铵(CTAB)/正己醇/水微乳体系低温陈化合成纳米TiO2,对微乳体系相行为做了初步的研究,并用X射线衍射、热重分析法等对其结构进行了表征.以甲基橙的光降解性能评价了其光催化性能,讨论了低温陈化与光催化活性的关系.光催化实验表明低温陈化制备的TiO降解甲基橙的能力优于纯TiO.     

用X射线荧光光谱法测定玻璃基材上C TiO2薄膜的组分和厚度

在X射线荧光（XRF）分析中应用基于基本参数法的FP—Multi软件,采用C固定道和Ti、Al、Si扫描道,以99．999％石墨及纯Al、Ti、SiO2四个块样做标样,对玻璃基材上含有C元素的TiO2薄膜厚度及成分进行了测试分析。薄膜厚度的测定结果还与用nkd干涉仪、扫描电镜断面分析等方法的测试结果做对比。证明X射线荧光光谱法测定玻璃基材上C＋TiO2薄膜厚度及成分是可行的。     

石墨烯场效应晶体管的光响应特性研究

采用电子束曝光和剥离工艺制备石墨烯场效应晶体管, 并研究其光电响应特性。结果表明, 当激光光斑(波长为633 nm)照射在金属电极边缘的石墨烯沟道时, 可测得明显的光电流。背栅电压能够有效调制光电响应, 可以改变光电流的大小和方向。在背栅调控下, 光电流出现饱和现象, 石墨烯晶体管的光响应度最大达到46.5 μA /W,可用于构建基于石墨烯的新型光探测器。     

A photovoltaic device structure based on internal electron emission

There has been an active search for cost-effective photovoltaic devices since the development of the first solar cells in the 1950s (refs 1-3). In conventional solid-state solar cells, electron-hole pairs are created by light absorption in a semiconductor, with charge separation and collection accomplished under the influence of electric fields within the semiconductor. Here we report a multilayer photovoltaic device structure in which photon absorption instead occurs in photoreceptors deposited on the surface of an ultrathin metal-semiconductor junction Schottky diode. Photoexcited electrons are transferred to the metal and travel ballistically to--and over--the Schottky barrier, so providing the photocurrent output. Low-energy (approximately 1 eV) electrons have surprisingly long ballistic path lengths in noble metals, allowing a large fraction of the electrons to be collected. Unlike conventional cells, the semiconductor in this device serves only for majority charge transport and separation. Devices fabricated using a fluorescein photoreceptor on an Au/TiO2/Ti multilayer structure had typical open-circuit photovoltages of 600-800 mV and short-circuit photocurrents of 10-18 micro A cm(-2) under 100 mW cm(-2) visible band illumination: the internal quantum efficiency (electrons measured per photon absorbed) was 10 per cent. This alternative approach to photovoltaic energy conversion might provide the basis for durable low-cost solar cells using a variety of materials.     

利用AFM在不同加工参数下实现纳米加工

利用扫描探针显微镜(SPM)进行电场诱导氧化加工的方法可应用于半导体微型器件和纳米电子器件的加工制作，文中研究了原子力显微镜(AFM)电场诱导氧化理论以及一些加工参数(偏置电压和加工速度)对加工结构尺寸的影响，并提出了阈值电压的概念，通过实验得出了偏压越大，加工线尺寸越大的结论，并指出随着加工速度的增大，加工线宽和线高都减小，且加工线高度和加工速度近似呈负对数关系，实验是在H钝化的Si表面上进行的。