一类加法完全单半环上的同余和同余格

由于含双幂等元的加法完全单半环S可由加法左零半环I,拟环R和加法右零半环来构造,该文重点用I和上的同余及R中的正规理想构成的容许三元组刻画S的同余和同余格.     

弱逆半群上最大幂等元分离同余和群同余

刻画了弱逆半群S上的最大幂等元分离同余和最小群同余,在此基础上,证明了S的群同余格与S的由主元所组成的逆半群I（S）的群同余格完备格同构;进而,证明了I（S）的群同余格是S的同余格的格同态像。     

C-拟正则半群上的可许同余对

令半群S为Clifford半群K的诣零扩张,Q为其Rees商半群S/K。引入S的可许同余对(δ,ω)的概念,其中δ和ω分别为诣零半群Q和Clifford半群K上的同余,证明了S上的任何同余σ都可由S的一个可许同余对唯一表示。另外,关于S上的任何同余σ,用σ_K表示σ在Clifford半群K上的限制,即σ_K=σ|_K,而σ_Q=(σ∨ρ_K)/ρ_K,其中ρ_K为S的理想K诱导的Rees同余,还证明了映射Γ:σ→(σ_Q,σ_k)为从S上的所有同余集合到S的所有可许同余对集合上的保序双射。最后,讨论了S上的同余是正则同余的条件。     

双循环半群上的同余结构

对双循环半群上的同余结构进行了讨论,证明了双循环半群S上同余只存在恒等同余或群同余,并给出最小群同余的刻化,σ={((s,t),(k,l)∈S×S且{s-k=t-l}.     

Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures

Au/Zn O/n-Si(MIS)structures were fabricated by using the RF sputtering method and their complex dielectric constant(ε~*=ε’-jε’’),electric modulus(M~*=M′+j M’’)and electrical conductivity(σ=σ_(dc)+σ_(ac))values were investigated as a function of frequency(0.7 k Hz-1 MHz)and voltage(-6–(+6 V))by capacitance-voltage(C-V)and conductance-voltage(G/ω-V)measurements to get more information on the conduction mechanisms and formation of barrier height between Au and n-Si.The lnσ-Lnf plots have two different regions corresponding to low-intermediate and high frequencies.Such behavior of lnσ-lnf plots shows that the existence of two different conduction mechanisms(CMs)at low-intermediate and high frequencies.Moreover,the reverse bias saturation current(I_o),ideality factor(n),barrier height(Φ_(Bo))were determined from the forward bias I-V data and they were found as a strong function of temperature.The value of n especially at low temperature is considerably higher than unity.The values ofΦ_(B0)and standard deviation(σ_s)were found from the intercept and slope ofΦ_(Bo)-q/2k T plots as 0.551 e V and 0.075 V for the region I(80–220 K)and 1.126 e V and 0.053 V for the region II(220–400 K),respectively.The values ofΦ_(Bo)and effective Richardson constant(A~*)were found from slope and intercept of activation energy plots as 0.564 e V and 101.084 Acm~(-2)K~(-2)for the region I and 1.136 e V and41.87 Acm~(-2)K~(-2)for the region II,respectively.These results confirm that the current-voltage-temperature(I-V-T)characteristics of the fabricated Au/Zn O/n-Si SBDs can satisfactorily be explained on the basis of TE theory with double GD of the BHs.     

正则半群上的强同余

证明了正则半群上的所有强同余构成该半群同余格的完备子格,刻画了与强同余对应的核-迹同余对-强同余对及其相互关系,由此给出正则半群上任一强同余的结构,并证明了强同余格和强同余对的集合之间一一对应.     

半格同余的扩张

本文研究了一般半群的任意子半群上半格同余扩张的问题。证明了，如果Ｔ是半群Ｓ的Ｃ－子半群，则Ｔ上的每个半格同余能唯一地扩张成Ｓ上的半格同余，并且Ｔ上所有的半格同余与Ｓ上所有的半格同余之间存在格同构。当Ｓ是正则半群，那么Ｓ的全子半群Ｔ上每个半格同余能唯一地扩张成Ｓ上的半格同余当且仅当Ｔ是Ｓ的Ｃ一子半群。     

型B半群上的同余

主要研究了型B半群上的容许同余,给出了型B半群上的容许同余核的一些性质,并得到了型B半群上最小容许同余的刻画。特别地,给出了型B半群上具有E性质的容许同余的刻画,得到了一些结果。     

一类E-酉正则半群的同余网结构

定义正则半群S的同余格C(S)上的算子半群K,k,T和t,对于P∈S,ρK和ρk(ρT和ρt)分别表示与ρ有相同核(迹)的最大和最小同余.对于同态像是E-酉的E-酉正则半群S,确定了其上任意同余ρ的同余网ρΓ*,并确定了由ρ的同余网ρΓ*生成的同余子格.     

交换幺半群及其局部化的同余

本文研究了交换幺半群A上同余和其局部化As上同余之间的关系(s为A的子幺半群)我们还给出了当子幺半群S满足条件(C)时,A上同余格和As上同余格之间一个同构映射并证明了它可保持可消同余、本原同余、素同余、最小半格同余、最小可分同余。     

一类正则半群上的同余

本文讨论具Q-逆断面的正则半群上的同余(格),具体刻划了这类半群上的同余(格),确定了若干特殊的同余。     

严格π－正则半群上的fuzzy同余

 π－正则半群S称为严格π－正则的,如果其正则元集为S的理想且为S的完全正则子半群。这里利用半群fuzzy同余的概念,研究了π－正则半群上fuzzy同余的性质。在此基础上, 给出了严格π－正则半群上fuzzy同余的性质和特征, 并给出了严格π－正则半群上群同余的刻画,得到了严格π－正则半群上fuzzy同余为fuzzy群同余的充要条件。     

左C－半群上的同余

本文利用左Ｃ－半群的各个分量上的同余定义了它的同余组，由此刻划了左Ｃ－半群上的同余；证明了左Ｃ－半群的同余格同构于它的同余组格。     

Development of multi-functional nano-paint for energy harvesting applications

The multi-functionality of lead magnesium niobate-lead titanate/paint(PMN-PT/paint) nanocomposite films for energy harvesting via piezoelectric and pyroelectric effects is described. PMN-PT/paint films have been fabricated by a conventional paint-brushing technique to provide a low-cost, low-temperature and low–energy route to create multi-functional films. The properties investigated included dielectric constants, ε' and ε', as a function of temperature, frequency and composition. From these parameters, it is indicated that the dielectric constants and AC conductivity(σ_(AC)) increase with an increase of filler content and temperature, implying an improvement of the functionality of the films. The results revealed that σ_(AC) obeyed the relation σ_(AC) =Aω~s, and exponents, was found to decrease by increasing the temperature. The correlated barrier hopping was the dominant conduction mechanism in the nanocomposite films. The efforts were made to investigate the performance of nanocomposite films to mechanical vibrations and thermal variations. A cantilever system was designed and examined to assess its performance as energy harvesters. The highest output voltage and power for a PMN-PT/paint based harvester with a broad frequency response operating in the-31-piezoelectric mode were 65 mV and 1 nW, respectively.Voltage and power were shown to be enhanced by application of thermal variations. Thus, films could be utilized for combined energy harvesting via piezoelectric and pyroelectric characteristics.     

椭球约束下等均值模型中联合估计的可容许性

 考虑等均值模型Y=1_nβ+ε,ε的前四阶矩和正态分布N(0,σ²V)相同,β和σ²是未知参数.在椭球约束H={(β,σ^-1):nh²β²≤σ²}下,给出了方差σ²和二阶原点矩β²+σ²在估计类T={Y’A Y:A≥0}中以及一、二阶矩(β,σ²)和(β,β²+σ²)的同时估计(q’Y,Y’A Y)在估计类ГT={(q’Y,Y’A Y):q∈Rⁿ,A≥0}中是容许估计的充要条件.     

Property (ω) for operator matrices

In this note,property (ω)and property 1 (ω)are variants of Weyl’s theorem. By means of topological uniform descent, the sufficient and necessary conditions of a bounded linear operator defined on a Hilbert space that satisfies property 1 (ω) and property (ω)is studied. Moreover, property 1 (ω)and property (ω)of 2 2operator matrices are discussed as well.     

纯正半群上的强同余(I)

证明了纯正半群上的所有强同余构成该半群同余格的完备子格,刻画了与强同余对应的核-迹同余对-正规迹、正规子半群(称为强同余对)及其相互关系,由此给出纯正半群上任一强同余的结构,并证明强同余格和强同余对的集合之间一一对应.     

弱 Stone-代数的同余三元组

目的研究弱Stone-代数同余的表示。方法构造同余三元组,并分析其性质。结果与结论一个弱Stone-代数L的任一个同余φ都可用同余三元组〈θ_1,θ_2,θ_3〉来表示,其中θ_1是布尔代数同余,θ_2,θ_3是格同余,并给出L是同余可换的充分条件。     

半群上的L-模糊同余

本文给出了一个Ｌ模糊关系生成Ｌ－模糊同余及包含在这Ｌ－模糊关系中最大的Ｌ－模糊同余的刻画。进一步证明了一个半群的Ｌ－模糊同余格是一个完备格且给出两个Ｌ－模糊同余并的刻画，特别地，我们得出群的Ｌ－模糊同余格为模格     

Synergistically optimizing electrical and thermal transport properties of ntype PbSe

In this paper,we report that the thermoelectric performance of n-type Pb Se could be improved through synergistically optimizing electrical and thermal transport properties via Sb doping and Mg alloying.The carrier concentration was firstly optimized through Sb doping,resulting in a maximum power factor of~15.4μW cm~(-1)K~(-2)and maximum ZT of~0.9 at 873 K in Pb_(0.99)Sb_(0.01)Se.Then,Mg was selected for alloying in Pb sites to produce point defects,which can largely intensify the phonon scattering and lower thermal conductivity.After Mg alloying,the thermal conductivity at 300 K(873 K)was significantly suppressed from~4.6 Wm~(-1)K~(-1)(1.5 Wm~(-1)K~(-1))for Pb_(0.99)Sb_(0.01)Se to~2.9 Wm~(-1)K~(-1)(1.1 Wm~(-1)K~(-1))for Pb_(0.99)Sb_(0.01)Se-6%Mg Se.Through combining Sb doping and Mg alloying,a maximum ZT of~1.1 was achieved at 873 K for Pb_(0.99)Sb_(0.01)Se-6%Mg Se,and the average ZT(ZT_(ave))was increased by 28.6%from~0.42 for Pb_(0.99)Sb_(0.01)Se to~0.54 for Pb_(0.99)Sb_(0.01)Se-6%Mg Se.The results indicate that Pb Se is a robust candidate for medium-temperature thermoelectric applications.