Oriented growth and assembly of zeolite crystals on substrates

The aligned array and thin film of zeolites and molecular sieves Possess a variety of potential applications in membrane separation and catalysis, chemical sensors, and microelectronic devices. There are two main synthesis methods for manufacturing the aligned arrays and thin films of zeolites and mo- lecular sieves, i.e. in situ hydrothermal reaction and self-assembly of crystal grains on substrates. Both of them have attracted much attention in the scientific community worldwide. A series of significant progress has been made in recent years. By the in situ hydrothermal synthesis, the oriented nucleation and growth of zeolite and molecular sieve crystals can be achieved by modifying the surface properties of substrstes or by changing the composition of synthesis solutions, leading to the formation of uni- formly oriented muIticrystal-aligned arrays or thin films. On the other hand, the crystal grains of zeo-lites and molecular sieves can be assembled onto the substrste surface in required orientation using different bondages, for instance, the microstructure in the array or thin film can be controlled. This review is going to summarize and comment the significant results and progress reported recently in manufacturing highly covered and uniformly aligned arrays or thin films of zeolites and molecular sieves. It involves （1） in situ growth of highly aligned zeolite arrays and thin films via embedding func-tional groups on the substrste surface, modifying the surface microstructure of substrates, as well as varying the composition of synthesis solutions; （2） assembly of zeolite and molecular sieve crystals on various substrates to form aligned arrays and thin films with full coverage by covalent, ionic, and in-termolecular coupling interactions between crystals and substrates; （3） coupling surface assembly with microcontact printing or photoetching technique to produce patterned zeolite arrays and thin films. Finally, the functionality and applications of zeolite arrays and thin films are briefly intr     

Photo-induced optical changes in GexAs40Se60-x thin films

Ge-As-Se chalcogenide thin films show a wide range of photosensitivity, which is utilized for the fabrication of micro-optical elements for integrated optics. The photosensitivity of GexAs40Se60?x(x=0,15) chalcogenide thin films for UV light was presented. For that purpose, the bulk samples of GexAs40Se60?x(x=0,15) chalcogenide glasses were prepared using conventional melt quenching technique, and thin films were prepared using thermal evaporation technique. These thin films were exposed to UV light for two hours. Amorphous natures of bulk samples and thin films were verified by XRD and chemical compositions were verified by EDX measurements. The thicknesses of the thin films were measured using a thickness profilometer. Linear optical analysis of these thin films was done using transmission spectra in wavelength range of 300?900 nm. Optical bandgap was determined by first peak of transmission derivative as well as extrapol ation of Tauc’s plot. R2 analysis was done using R software to ensure that the material is indirect bandgap material. It is observed that two hours UV exposure causes photo-darkening along with photo-expansion in As40Se60 thin films, while photo-bleach ing and photo-densification for Ge15As40Se45 thin films. However, the amounts of photo-induced optical changes for Ge15As40Se45 thin films are smaller than those for As40Se60 thin films. The changes in optical absorption, bandgap and thickness are understood base d on the bonding rearrangement caused by UV exposure.     

Improvement of corrosion performance of 316L stainless steel via PVTMS/henna thin film

Metallic materials are the most used materials as orthopedic or dental implants due to their excellent mechanical properties. However they are not able to create a natural bonding with the mineralized bone and occasionally suffer localized corrosion. This work describes the electrochemical behavior of a hybrid sol–gel thin film with the addition of green inhibitor. These films enhance the ability of the implant to make a union with the existing bone and improve its resistance to aggressive environment. An ethanol solution of the polymerized vinyltrimethoxysilane (PVTMS) was mixed with an aqueous solution of henna extract (Lawsonia inermis) and refluxed to give homogeneous sols. Nanostructure hybrid PVTMS/henna thin films were deposited on the stainless steel 316L by spin-coating. The morphology, composition and adhesion of hybrid sol–gel coatings have been examined by SEM, EDX and pull-off test, respectively. Addition of high additive concentrations (0.1%) did not disorganize the sol–gel network. Direct pull-off test recorded a mean coating-substrate bonding strength larger than 20.6 MPa for the hybrid sol–gel coating. The effect of henna extract, with various added concentrations from 0.012% to 0.1%, on the anticorrosion properties of sol–gel films have been characterized by electrochemical impedance spectroscopy (EIS) and potentiodynamic polarization tests in simulated body fluid (SBF) solution and has been compared to the bare metal. Henna extract additions (0.05%) have significantly increased the corrosion protection of the sol–gel thin film to higher than 90%. The in vitro bioactivity of prepared films indicates that hydroxyapatite nuclei can form and grow on the surface of the doped sol–gel thin films. The present study shows that due to their excellent anticorrosion properties, bioactivity and bonding strength to substrate, doped sol–gel thin films are practical hybrid films in biomedical applications.     

Study of phase separation in Ga25Se75 xTex chalcogenide thin films

The effects of composition and thermal annealing in between glass transition and crystallization temperature on the optical and structural properties of Ga25Se75-xTex were investigated. The glass transition and crystallization temperature of the synthesized samples was measured by non-isothermal DSC measurements. Amorphous thin films of Ga25Se75-xTex glasses were grown onto ultra clean glass/Si wafer (100) substrates using the vacuum evaporation technique. The effect of thermal annealing on the optical gap (Eg) for Ga25Se75-xTex thin films in the temperature range 358-388K is studied. As-prepared and annealed thin films were characterized by X-ray diffraction, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy and optical absorption. Thermal annealing was found to be accompanied by structural effects, which in turn, lead to changes in the optical constants. The optical absorption coefficient (a) for as-deposited and thermally annealed films was calculated from the absorbance data. From the knowledge of absorption coefficient at different wavelengths, the optical band gap (Eg) was calculated for all compositions of Ga25Se75-xTex thin films before and after thermal annealing. Results indicate that allowed indirect optical transition is predominated in as-deposited and thermally annealed thin films. The influence of Te incorporation and thermal annealing in Ga25Se75-xTex thin films results in a gradual decrease in the indirect optical gap, this behaviorcan be explained as increased tailing. The decrease in optical band gap and an increase in absorption coefficient and extinction coefficient with thermal annealing can be attributed to transformation from amorphous to crystalline phase.     

Progress on Sn-based thin-film anode materials for lithium-ion batteries

Thin-film lithium-ion batteries are the most competitive power sources for various kinds of micro-electro-mechanical systems and have been extensively researched.The present paper reviews the recent progress on Sn-based thin-film anode materials,with particular emphasis on the preparation and performances of pure Sn,Sn-based alloy,and Sn-based oxide thin films.From this survey,several conclusions can be drawn concerning the properties of Sn-based thin-film anodes.Pure Sn thin films deliver high reversible capacity but very poor cyclability due to the huge volume changes that accompany lithium insertion/extraction.The cycle performance of Sn-based intermetallic thin films can be enhanced at the expense of their capacities by alloying with inactive transition metals.In contrast to anodes in which Sn is alloyed with inactive transition metals,Sn-based nanocomposite films deliver high capacity with enhanced cycle performance through the incorporation of active elements.In comparison with pure Sn anodes,Sn-based oxide thin films show greatly enhanced cyclability due to the in situ formation of Sn nanodispersoids in an Li2O matrix,although there is quite a large initial irreversible capacity loss.For all of these anodes,substantial improvements have been achieved by micro-nanostructure tuning of the active materials.Based on the progress that has already been made on the relationship between the properties and microstructures of Sn-based thin-film anodes,it is believed that manipulating the multi-phase and multi-scale structures offers an important means of further improving the capacity and cyclability of Sn-based alloy thin-film anodes.     

Effects of deposition parameters on the properties of VO2 thin films

The vanadium oxide thin films are deposited for microbolometers by radio frequency reactive sputtering method at room temperature. The effects of the oxygen partial pressure on the deposition rate, electrical properties and compositions of the films are discussed. The as-deposited VO_x thin films with x value of nearly 2 are deposited by adjusting the oxygen partial pressure. After oxidation annealing of these films in air, the VO₂ films with high temperature coefficients of resistivity (about -4%/℃) and low resistivity can be obtained. The square resistances of the films are in the range of 100 kΩ/squ?300 kΩ/squ. All films are deposited at room temperature and annealed at 400℃, in which the compatibility between VO_x deposition process and MEMS (micro electromechanical systems) is greatly improved.     

Effects of deposition parameters on the properties of VO2 thin films

The vanadium oxide thin films are deposited for microbolometers by radio frequency reactive sputtering method at room temperature. The effects of the oxygen partial pressure on the deposition rate, electrical properties and compositions of the films are discussed. The as-deposited VO_x thin films with x value of nearly 2 are deposited by adjusting the oxygen partial pressure. After oxidation annealing of these films in air, the VO₂ films with high temperature coefficients of resistivity (about -4%/℃) and low resistivity can be obtained. The square resistances of the films are in the range of 100 kΩ/squ?300 kΩ/squ. All films are deposited at room temperature and annealed at 400℃, in which the compatibility between VO_x deposition process and MEMS (micro electromechanical systems) is greatly improved.     

Cathodic micro-arc electrodeposition of yttrium stabilized zirconia （YSZ） coatings on FeCrAI alloy

The formation of ceramic coatings on metal substrate by cathodic electrolytic deposition (CELD) has received more attention in recent years. But only thin filmscan be prepared via CELD. Yttrium stabilized zirconia (YSZ) ceramic coatings were deposited on FeCrAI alloy by a novel technique--cathodic micro-arc electrodeposition (CMED).The result shows that, when a high pulse electric field is applied to the cathode which was pre-deposited with a thin YSZ film, dielectric breakdown occurs and micro-arc discharges appear. Coatings with reasonably thickness of-300μm and crystalline structure can be deposited on the cathode by utilizing the energy of the micro-arc. The thickness of the as-deposited coating is dominated by the voltage and the frequency. Y2O3 is co-deposited with ZrO2 when Y(NO3)3 was added to the electrolyte, which stabilize t-phase, t′-phase and c-phase of ZrO2 at room temperature. The amount of the m-ZrO2 in the coating is diminished by increasing the concentration of Y(NO3)3 in the electrolyte.This report describes the processing of CMED and studies the microstructure of the deposited YSZ coatings.     

Microstructure and electric characteristics of AETiO_3(AE=Mg,Ca, Sr)doped CaCu_3Ti_4O_(12) thin films prepared by the sol–gel method

This paper focuses on the effects of alkline-earth metal titante AETiO_3(AE = Mg,Ca,Sr) doping on the microstructure and electric characteristics of CaCu_3Ti_4O_(12) thin films prepared by the sol-gel method.The results showed that the grain size of CCTO thin films could be increased by MgTiO_3 doping.The movement of the grain boundaries was impeded by the second phases of CaTiO_3 and SrTiO_3 concentrating at grain boundaries in CaTiO_3 and SrTiO_3 doped CCTO thin films.Rapid ascent of dielectric constant could be observed in 0.1Mg TiO_3 doped CCTO thin films,which was almost as three times high as pure CCTO thin film and the descent of the dielectric loss at low frequency could also be observed.In addition,the nonlinear coefficient(α),threshold voltage(V_T) and leakage current(I_L) of AETiO_3 doped CCTO thin films(AE = Mg,Ca,Sr) showed different variation with the increasing content of the MgTiO_3,CaTiO_3 and SrTiO_3.     

DIAMOND FILMS DEPOSITED AT LOW TEMPERATURES MICROWAVE PLASMA-ASSISTED CVD METHOD

Low-temperature deposition of diamond thin films in the range of 280~445℃ has been successfully carried out by microwave plasma-assisted CVD method.At lower deposition temperatures (280~445℃),the large increase in the nucleation density and great improvement in the average surfae roughness of the diamond were observed. Results of low temperature deposition and characterization of diamond thin films obtained are presented.