白光LED用量子点玻璃的制备方法及应用研究进展

白光LED用量子点玻璃不但具有量子点高荧光效率、发光波长可调和较窄的发射波长等新颖的光学特性,而且量子点的热稳定性差和水氧抵抗性差的问题也很好的得到了解决,可以有效的避免封装材料黄化老化、发光不均匀和出现光斑等传统封装白光LED出现的问题。综述了白光LED用量子点玻璃的制备方法及其在LED的应用,并对白光LED用量子点玻璃的荧光效率和无铅、无镉量子点玻璃的研制提出了进一步展望。     

基于量子点白光LED的可见光通信系统

针对目前可见光通信( VLC: Visible Light Communication) 系统中存在的光源照明效果差和效率低的问题,提出了以量子点白光发光二极管( QDs-WLED: Quantum Dots White Light Emitting Diode) 作为VLC 系统的光源,并以此设计了一套便携式点对点VLC 收/发终端。采用一步合成法合成了峰值在570 nm 高稳定性、高量子效率的核壳硒化镉( CdSe) 量子点材料,其量子产率达到81%。将该量子点材料取代传统的荧光粉材料,与环氧树脂混合后涂到蓝光LED( Light Emiting Diode) 芯片上制成白光LED 器件,并测试了其发光光谱、色坐标图和流明效率。然后阐述了VLC 系统的结构和原理,并编写了通信软件和制定了相关协议,实现了系统的软硬件集成,利用所研制的VLC 系统,开展了通信实验。实验结果表明,QDs-WLED 除了拥有出色的照明效果和节能特性外,也能实现数据传输的功能。在选择最佳直流偏置电压2． 70 V 的情况下,系统的最大通信距离为1． 3 m,可达到的最大通信速度为267 kbit /s,误码率( BEＲ: Bit Error Ｒatio) 小于10 ^{－ 3}。     

油酸石蜡体系中红光CdSe量子点的合成及其高显色指数白光LED制备

半导体量子点具有量子尺寸效应,其半导体带隙随着量子点尺寸的减小而增大.在油酸石蜡绿色合成体系中通过引入表面活性剂油胺来调控Cd Se量子点尺寸.加入油胺可得到大粒径的Cd Se量子点,其发光光谱范围可以扩展到红光区域,得到发射波长为630 nm的量子点.对红光量子点进行二氧化硅包覆得到稳定的光转换材料,并与蓝光LED芯片以及黄光荧光粉进行封装得到显色指数Ra为90的高显色指数白光LED器件.     

QDs量子点太阳能电池与器件的优化和光学应用

QDS量子点物质在太阳光的可见光范围内具有很好的发光反应,与其他的电致发光器件材料相比,纳米晶量子点具有很多潜在优势,例如荧光量子率高,发射光谱窄,发射波长方便调整,化学稳定性能好等优异的光学、电学性能,使其成为很具有研究方向的电致发光材料,而利用这些性质和优势使量子点物质在光伏电池和电致发光器件方面具有很好的应用前景.     

胶体绿色量子点材料研究进展

绿色量子点材料是指不含镉、铅等有毒材料的新型绿色环保的材料,具有色彩明亮、发光纯度高、可精确调节发光颜色、低能耗等优异特性,是未来替代LCD的新型显示材料之一.近年来,科研人员开展了多方面的绿色量子点显示材料的研究,研发完成了以硅、磷、碳基为主的且不含镉、铅等无毒量子点材料的制备,同时结合稀土掺杂、离子掺杂以及有机与无机复合的方法,进一步提升了绿色量子点材料的光学特性,获得了可以实现高清显示的绿色量子点关键基础材料.文中重点介绍了胶体绿色量子点材料的种类、光电性能、生物相容性和应用场景的研究进展,并展望了胶体绿色量子点材料的未来发展趋势.     

CsPbI3量子点在不同极性溶剂的光学特性

全无机钙钛矿CsPbI₃量子点具有发射谱线窄、荧光量子产率高和稳定性强等特点,在红光LEDs和新型太阳电池领域具有广阔的应用前景.本文通过热注入法在正己烷溶剂中合成了CsPbI₃ 量子点, 并对其结构和光学特性进行表征,结果表明,量子点主要的发光机制是量子限制区自由激子复合.通过改变溶剂的种类(正己烷、甲苯、乙酸乙酯、乙酸甲酯)对量子点的光学特性进行了调整,研究发现随着溶剂极性的增加,发光峰位从615 nm红移至660 nm,这是因为极性溶剂对量子点表面具有修饰作用,通过改变溶液极性实现CsPbI₃量子点发光峰位调节的条件为制备波长可调的光电器件提供了一定的实验参考.     

CdSe/CdS核壳型量子点的合成及其在白光LED的应用

以氯化镉、二氧化硒及硫化钠为原料在水相中直接合成巯基乙酸稳定的CdSe/CdS核壳型量子点,对所合成的核壳量子点的晶体结构、形貌特点及光学特性进行了X线粉末衍射(XRD)、高分辨透射电镜(HRTEM)、紫外可见吸收光谱(UV-vis)和荧光光谱(PL)表征.XRD结果表明合成的CdSe/CdS核壳量子点表现出显著的立方晶系结构CdS的特征峰;TEM结果显示所合成的量子点形貌呈近球状,直径大约6nm.CdSe/CdS量子点发射黄色荧光,其荧光强度是CdSe的10倍左右.将CdSe/CdS量子点与蓝光InGaN芯片组合得到白光发光二极管(LED),所得白光LED的显示指数为77.1,与当前商业用的YAG白光LED相当,说明所合成的CdSe/CdS核壳量子点可作为白光LED备选荧光材料.     

量子阱器件的发展及其应用

随着半导体量子阱材料的发展，量子阱器件广泛应用于各种领域。本文主要介绍量子阱的基本原理，重点从量子阱材料．量子阱激光器、量子阱虹外探测器、量子阱LED、量子阱光集成器件等方面介绍量子阱理论在光电器件方面的发展及其应用。     

ZnO/CdS量子点的制备及其荧光性能

研究了用液相法的方法可控合成ZnO/CdS量子点,并通过调节前驱体的比例来制备不同光色的量子点,使ZnO/CdS量子点能够光色可调,成功地得到激发主峰在450-460 nm,发射主峰在600 nm左右的ZnO/CdS量子点,和蓝光复合可以得到暖白光,大大提高白光LEDs的显色性,这说明该量子点在暖白光发光二级管中具有潜在的应用价值.     

Ag纳米粒子增强CdS白光量子点器件的研制

在十八烯体系中合成Cd S量子点,用光诱导法制备银纳米粒子,并将两者复合,制备成4种复合样品,分析复合样品的荧光谱,在银纳米颗粒的表面等离子体共振峰分别对应于富含缺陷的硫化镉量子点的带边荧光峰和表面态荧光峰时,发生了带边荧光淬灭而表面态荧光增强的现象.结果表明,通过控制金属和量子点之间的距离,能够控制带边荧光辐射和缺陷带荧光辐射的比例,从而控制白光量子点的色温.采用395 nm紫光LED作为激发光源,将涂有荧光样品的玻片与激发光源组装成银纳米颗粒/量子点复合结构白光照明器件原型,银纳米粒子能够改变Cd S量子点样品发光颜色,荧光效应的增强程度随着量子点样品的厚度减小而加强.该研究为认识荧光物质和金属之间的相互作用提供了新途径,同时探讨了该器件在变色发光材料方向的应用前景.     

量子点层厚度对量子点发光二极管发光特性的影响简

采用湿法旋涂技术制备量子点发光二极管器件（QD-LEDs）。PEDOT作为空穴注入层,TFB作为空穴传输层,量子点作为发光层,采用无机二氧化钛（TiO2）作为电子传输层,在相同的工艺条件下调节量子点层旋涂转速（800～1100 r/min）,制备不同厚度的量子点发光二极管发光器件（QD-LEDs）。实验结果表明,当量子点层的旋涂转速为900 r/min时,此时的量子点层厚度为30 nm,所制备的量子点发光二极管器件（QD-LEDs）的发光性能最好,开启电压最低,只有5．5 V。     

Controlling cavity reflectivity with a single quantum dot

Solid-state cavity quantum electrodynamics (QED) systems offer a robust and scalable platform for quantum optics experiments and the development of quantum information processing devices. In particular, systems based on photonic crystal nanocavities and semiconductor quantum dots have seen rapid progress. Recent experiments have allowed the observation of weak and strong coupling regimes of interaction between the photonic crystal cavity and a single quantum dot in photoluminescence. In the weak coupling regime, the quantum dot radiative lifetime is modified; in the strong coupling regime, the coupled quantum dot also modifies the cavity spectrum. Several proposals for scalable quantum information networks and quantum computation rely on direct probing of the cavity-quantum dot coupling, by means of resonant light scattering from strongly or weakly coupled quantum dots. Such experiments have recently been performed in atomic systems and superconducting circuit QED systems, but not in solid-state quantum dot-cavity QED systems. Here we present experimental evidence that this interaction can be probed in solid-state systems, and show that, as expected from theory, the quantum dot strongly modifies the cavity transmission and reflection spectra. We show that when the quantum dot is coupled to the cavity, photons that are resonant with its transition are prohibited from entering the cavity. We observe this effect as the quantum dot is tuned through the cavity and the coupling strength between them changes. At high intensity of the probe beam, we observe rapid saturation of the transmission dip. These measurements provide both a method for probing the cavity-quantum dot system and a step towards the realization of quantum devices based on coherent light scattering and large optical nonlinearities from quantum dots in photonic crystal cavities.     

Generation of single optical plasmons in metallic nanowires coupled to quantum dots

Control over the interaction between single photons and individual optical emitters is an outstanding problem in quantum science and engineering. It is of interest for ultimate control over light quanta, as well as for potential applications such as efficient photon collection, single-photon switching and transistors, and long-range optical coupling of quantum bits. Recently, substantial advances have been made towards these goals, based on modifying photon fields around an emitter using high-finesse optical cavities. Here we demonstrate a cavity-free, broadband approach for engineering photon-emitter interactions via subwavelength confinement of optical fields near metallic nanostructures. When a single CdSe quantum dot is optically excited in close proximity to a silver nanowire, emission from the quantum dot couples directly to guided surface plasmons in the nanowire, causing the wire's ends to light up. Non-classical photon correlations between the emission from the quantum dot and the ends of the nanowire demonstrate that the latter stems from the generation of single, quantized plasmons. Results from a large number of devices show that efficient coupling is accompanied by more than 2.5-fold enhancement of the quantum dot spontaneous emission, in good agreement with theoretical predictions.     

GaN基量子点的制备与光致发光特性的研究

由于GaN基量子点具有较强的量子效应,有望获得比其他量子阱器件更优异的性能。目前GaN基量子点的制备及其光学特性已经成为Ⅲ-Ⅴ族半导体器件研究的热点。探讨了GaN基量子点的生长及其结构特性,重点研究了GaN基量子点的S-K生长模式及其影响量子点生长的因素,并讨论了GaN基量子点的光致发光特性及其影响因素。     

L-半胱氨酸修饰的水溶性掺杂型CdZnTe量子点的水热法制备和表征

通过水热法,以Zn离子作为掺杂材料,L-半胱氨酸为稳定剂,制备出了水溶性的掺杂型CdZnTe量子点.应用高温高压的水热合成法,有效地减少了量子点表面的缺陷,过渡金属Zn的掺杂有效降低了CdTe量子点的毒性,结果表明:制备出的CdZnTe量子点含有高比例掺杂剂,性质稳定、单分散性好、量子产率高,具有良好的生物相容性,可广泛应用于生化检测和生物医学研究.     

Quantum phase transition in a single-molecule quantum dot

Quantum criticality is the intriguing possibility offered by the laws of quantum mechanics when the wave function of a many-particle physical system is forced to evolve continuously between two distinct, competing ground states. This phenomenon, often related to a zero-temperature magnetic phase transition, is believed to govern many of the fascinating properties of strongly correlated systems such as heavy-fermion compounds or high-temperature superconductors. In contrast to bulk materials with very complex electronic structures, artificial nanoscale devices could offer a new and simpler means of understanding quantum phase transitions. Here we demonstrate this possibility in a single-molecule quantum dot, where a gate voltage induces a crossing of two different types of electron spin state (singlet and triplet) at zero magnetic field. The quantum dot is operated in the Kondo regime, where the electron spin on the quantum dot is partially screened by metallic electrodes. This strong electronic coupling between the quantum dot and the metallic contacts provides the strong electron correlations necessary to observe quantum critical behaviour. The quantum magnetic phase transition between two different Kondo regimes is achieved by tuning gate voltages and is fundamentally different from previously observed Kondo transitions in semiconductor and nanotube quantum dots. Our work may offer new directions in terms of control and tunability for molecular spintronics.     

III族氮化物半导体异质结构中载流子的量子输运和自旋性质

III族氮化物半导体具有宽的直接带隙,很强的极化电场,优异的物理特性,是发展高频、高温、高功率电子器件和光电子器件的优选材料．同时,III族氮化物半导体有很长的电子自旋弛豫时间以及很高的居里温度,也成为近年来半导体自旋电子学研究的重要材料体系之一．本文介绍了用量子输运和自旋光电流方法对Gain基异质结构中载流子的量子输运和自旋性质的研究进展．对III族氮化物半导体中的能带结构,子带占据和散射,自旋分裂及自旋轨道耦合机制等进行了讨论．     

激光器的新成员--量子点激光器

量子点异质结构是窄带隙材料以纳米尺度连贯插入单晶体点阵中．这些微小结构为改进异质结构激光器的基本原理以及拓宽它们的应用提供了独特的平台．与量子阱激光器相比，量子点激光器因具有delta样的电子态密度而具有优异的光激发特性．近年来半导体量子点激光器的进展已经达到了一个新的水平，在某些最重要的应用方面，量子点激光器已经超过了量子阱激光器的一些关键特性．