| GaN基量子点的制备与光致发光特性的研究 |
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| 引用本文： | 黄文登,任亚杰.GaN基量子点的制备与光致发光特性的研究[J].陕西理工学院学报(自然科学版),2014(2):70-73,78. |
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| 作者姓名： | 黄文登 任亚杰 |
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| 作者单位： | 陕西理工学院物理与电信工程学院,陕西汉中723000 |
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| 基金项目： | 国家自然科学基金资助项目（11304192）;陕西省教育厅科学研究计划项目（12JK0982） |
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| 摘 要： | 由于GaN基量子点具有较强的量子效应,有望获得比其他量子阱器件更优异的性能。目前GaN基量子点的制备及其光学特性已经成为Ⅲ-Ⅴ族半导体器件研究的热点。探讨了GaN基量子点的生长及其结构特性,重点研究了GaN基量子点的S-K生长模式及其影响量子点生长的因素,并讨论了GaN基量子点的光致发光特性及其影响因素。
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| 关 键 词： | GaN 量子点 光学性质 |
The preparations and optical properties of GaN-based quantum dots |
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| HUANG Wen-deng,REN Ya-jie.The preparations and optical properties of GaN-based quantum dots[J].Journal of Shananxi University of Technology:Natural Science Edition,2014(2):70-73,78. |
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| Authors: | HUANG Wen-deng REN Ya-jie |
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| Institution: | HUANG Wen-deng, REN Ya-jie |
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| Abstract: | Due to quantum effects in quantum dots ,GaN-based quantum dot optoelectronic devices are expected to obtain more excellent performance than the quantum well devices .The preparations and optical properties of GaN-based quantum dots remains a hot issue .This paper mainly discusses the growth of GaN-based quantum dots and their structural characteristics , focusing on the S-K growth patterns of GaN-based quantum dot and their impact factors ,and also discusses the photoluminescence properties and applications of GaN-based quantum dot . |
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| Keywords: | GaN GaN quantum dot optical property |
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