V、Mn掺杂ZnO薄膜的掺杂特性及制备工艺研究

本文采用溶胶一凝肢法制备掺杂Mn的ZaO薄膜,井直流磁控溅射V掺杂的ZnO薄膜,研究Mn、V掺杂浓度以及制备工艺对于ZnO薄膜微观组织和电学性能的影响。研究发现,溶胶一凝胶法制备ZnO薄膜,最佳熟处理温度为450℃前烘和700℃退火处理结合。掺杂ZnO薄膜结构显示,Mn、V离子部分替代Zn离子进入ZnO晶格的内部。Mn掺杂ZnO薄膜浓度约为1％时,或V元素掺杂浓度为2％时,ZnO薄膜中的（002）晶向的衍射峰最强,显示出一定的C轴择优生长性。     

梯度掺杂AZO薄膜的制备及其性能表征

采用Sol-Gel法,以不同铝离子浓度的溶胶梯度掺杂的方法制备了Al掺杂ZnO(AZO)薄膜,用XRD衍射仪和SEM扫描电镜对该薄膜进行了结构和形貌分析,并对其电学性能和光学性能进行了研究。结果表明,梯度掺杂的AZO薄膜比单一浓度掺杂5.0 at%(原子数百分比)的薄膜具有更明显的c轴择优取向,更强的本征紫外发光峰和近紫外发光峰。当薄膜的退火温度在500~650℃区间时,薄膜电阻率稳定在10-2Ω.cm,高于700℃时,薄膜电阻率明显升高。     

直流磁控溅射制备透明导电ZAO薄膜退火处理时间的研究

为改进太阳能薄膜材料制备工艺,利用直流磁控溅射方法,在较高氩气压强——12.7 Pa下制备出透明导电掺铝ZnO(ZAO)薄膜,并对其进行退火处理时间的研究。与其他研究者不同,利用较高压强也制备出高性能ZAO薄膜,并且可以利用退火处理改善薄膜的晶体结构、内应力、表面形貌以及光电性能。薄膜的电阻率随着退火时间的增加而降低,从原位沉积时的3.5×10-3Ω.cm,下降到1.9×10-3Ω.cm;薄膜的平均透光率增加到80%以上,光谱吸收边发生蓝移。结果表明,退火2 h,ZAO性能改善最优。     

热处理温度及冷却速度对ZnO:Al薄膜性能的影响

采用溶胶一凝胶法在普通玻璃衬底上制备出了Al3+离子掺杂的ZnO(ZnO:Al)透明导电薄膜.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、四探针法及紫外-可见分光光度计(UV-VIS)等分析方法对制备的薄膜进行了表征,研究了热处理温度及冷却速度对ZnO:Al薄膜结晶状况、电阻率、可见光透过率的影响.研究发现:制备的薄膜为具有沿(002)晶面择优取向的ZnO六角纤锌矿结构,适当的热处理温度和冷却速度有利于改善ZnO:Al薄膜的导电性,并且当采用快速冷却时薄膜的导电性明显增强,而透光率略微减小.500℃热处理1 h后,-15℃环境中快速冷却相对于随炉冷却和空气中冷却制备的薄膜电阻率有大幅度的降低,达到0.22Ω·cm,透光率大于80%.     

退火温度对Li掺杂ZnO薄膜光电特性的影响

采用溶胶凝胶法旋涂制备了摩尔分数为3%的Li掺杂ZnO薄膜,在450~650℃下退火后测试其微结构、表面形貌和光电特性.结果表明薄膜为六方纤锌矿多晶结构且n型导电,退火温度的升高改善了结晶度、表面形貌、透过率和导电性.退火温度超过550℃后电阻率增大,样品由肖特基导电转变为欧姆导电;伏安特性模拟结果表明,替位Li逐渐增多、薄膜功函数增大,有利于制备p型薄膜.退火温度达600℃后,由于薄膜再蒸发等使光电特性变差.550℃是最佳退火温度,适于制备高质量的透明导电薄膜,此时薄膜透过率达95%,薄膜电阻率为2.49×103Ω.cm.     

Effect of Post-Annealing Temperature on Optical and Electrical Properties of Li：ZnO Thin Films

采用溶胶凝胶法旋涂制备了摩尔分数为3%的Li掺杂ZnO薄膜,在450~650℃下退火后测试其微结构、表面形貌和光电特性.结果表明薄膜为六方纤锌矿多晶结构且n型导电,退火温度的升高改善了结晶度、表面形貌、透过率和导电性.退火温度超过550℃后电阻率增大,样品由肖特基导电转变为欧姆导电;伏安特性模拟结果表明,替位Li逐渐增多、薄膜功函数增大,有利于制备p型薄膜.退火温度达600℃后,由于薄膜再蒸发等使光电特性变差.550℃是最佳退火温度,适于制备高质量的透明导电薄膜,此时薄膜透过率达95%,薄膜电阻率为2.49×103Ω.cm.     

常压固相烧结法制备ZAO靶材及其性能的研究

采用常压固相烧结法,通过优化烧结工艺,制备出平整、组织均匀、致密的ZAO靶材.研究了掺杂含量、烧结温度对陶瓷靶材微观结构和性能的影响,并使用自制靶材,采用射频磁控溅射法镀膜.结果表明:Al2O3的掺杂没有破坏ZnO晶体结构,Al原子对Zn原子进行有效替位;晶粒尺寸随着掺杂量的增多而减小;靶材的电阻率随掺杂量的增加呈U型变化,在3wt%时取得最小值4.2×10-2Ω.cm;靶材致密度超过96%.使用该靶材生长的多晶ZAO薄膜具有(002)择优取向,结晶均匀,呈柱状生长,薄膜电阻率和可见光平均透射率可分别达到8×10-4Ω.cm～9×10-4Ω.cm和85%.图9,表1,参14.     

Sol-Gel法制备Al掺杂ZnO薄膜的微结构及电学特性

采用溶胶-凝胶法在Si(100)衬底上制备了不同浓度Al掺杂的ZnO(AZO)薄膜。XRD研究表明Al掺杂对薄膜的结晶产生明显的影响。用四探针法测量其电阻特性,表明在1 mol%Al掺杂,600℃下退火,其电阻率最低。     

铝掺杂氧化锌薄膜电学特性的研究

利用脉冲激光沉积法,在氧气氛下(氧分压为20 Pa)以硅为基体制备了ZnO:Al透明导电膜.靶材选用(ZnO)1-x(Al2O3)x陶瓷靶,沉积过程中基体温度保持在600℃.通过对膜进行霍尔效应测量及SEM、XRD测试分析,研究了靶材中的化学配比(掺杂比)对膜的电学特性的影响.结果表明:掺杂比影响着膜的电学性能和膜的结晶状况.掺杂铝的质量分数为1.37%时所获得的ZnO薄膜具有最小的电阻率.     

稀土钇-铝共掺杂氧化锌透明薄膜光学性能研究

采用溶胶-凝胶浸渍提拉法制备出纳米钇-铝共掺杂氧化锌(Y-AZO)透明薄膜，利用XRD、EDX、SEM、UV-Vis测试对薄膜进行了表征.结果表明:Y-AZO晶粒为六角纤锌矿结构，当Al的掺杂量高于或等于Y的掺杂量、退火温度为500℃时可以得到不含杂质的均匀透明的薄膜，且薄膜在400~780 nm 可见光范围内平均透过率在87%以上.     

ZAO透明导电纳米薄膜中Al元素分布对其性能的影响

主要对直流反应磁控溅射法制备ZAO纳米薄膜中Al元素的相对含量进行了分析,对其作了EDS,XRD测试,并研究了Al质量分数与ZAO薄膜的光、电性能的关系·得出ZAO薄膜中成分是均匀的,具有ZnO晶体结构;Al元素的掺杂没有形成新的化合物(Al2O3),Al对Zn的掺杂替换是提高ZAO薄膜导电性能的关键因素,对薄膜在可见光区的透射性影响不大·制备的薄膜最低电阻率为4 5×10-4Ω·cm,可见光透射率达到80%以上·     

Study on ZnO:Al (ZAO) films by DC reaction magnetron sputtering

The high quality ZnO: A1 films were successfully produced by DC reaction magnetron sputtering technology. The Al-doping effect on electrical and optical properties and its scattering mechanism are discussed in detail. The analyses of X-ray diffractometer (XRD), X-ray photoelectron spectroscopy(XPS) and high resolution Auger electron spectroscopy (AES) show that Al2O3 could be effectively removed by controlling oxygen flow and Al-doping concentration during deposition of ZnO: Al films. Zn, Al and oxygen elements are well distributed through the films. For highly degenerated ZnO:A1 semi-conductive thin films, the theoretical and experimental results reveal that the ionized impurity. scattering dominates the Hall mobility in the films in the low-temperature range, while the lattice vibration scattering becomes a major scattering mechanism in the high-temperature range. The grain boundary scattering only plays a major role in the ZAO films with small grain size (as compared to the electron mean free path). The photoelectric properties of ZAO films show that it has low resistivity ( ～ 5 × 10-4 Ωcm), and the transmittance in visible range and the reflectance in IR region are above 80% and 60%, respectively.     

Fabrication of tungsten films by metallorganic chemical vapor deposition

Tungsten films growing on copper substrates were fabricated by metallorganic chemical vapor deposition (MOCVD). The chemical purity, crystallographic phase, cross-sectional texture, and resistivity of the deposited films both before and after annealing treatment were investigated by X-ray energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM), and four-point probe method. It is found that the films deposited at 460℃ are metastable β-W with (211) orientation and can change into α-W when annealed in high-purity hydrogen atmosphere at high temperature. There are small amounts of C and O in the films, and the W content of the films increases with increasing deposition temperature and also goes up after annealing in high-purity hydrogen atmosphere. The films have columnar microstructures and the texture evolution during their growth on copper substrates can be divided into three stages. The resistivity of the as-deposited films is in the range of 87-104 μΩ·cm, and low resistivity is obtained after annealing in high-purity hydrogen atmosphere.     

磁控溅射制备参数对 ZnO:Al电学性能的影响

ZnO:Al(ZAO)透明导电薄膜是一种n型半导体,有高的载离子浓度和大的光学禁带宽度,具有优异的电学和光学性能,有极广的应用前景.本文介绍了ZAO薄膜的广泛用途和今后研究的趋势,并着重分析了磁控溅射制备参数对电学性能的影响.     

Influence of post-annealing on the properties of Ta-doped In<Subscript>2</Subscript>O<Subscript>3</Subscript> transparent conductive films

Ta-doped In₂O₃ transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C. The influence of post-annealing on the structural, morphologic, electrical and optical properties of the films was investigated using X-ray diffraction, field emission scanning electron microscopy, Hall measurements and optical transmission spectroscopy. The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction. The lowest resistivity, 5.1×10⁻⁴ Ω cm, was obtained in the film annealed at 500°C, which is half of that of the un-annealed film (9.9×10⁻⁴ Ω cm). The average optical transmittance of the films was over 90%. The optical bandgap was found to decrease with increasing annealing temperature.     

Al-N 共掺杂p 型ZnO 薄膜制备及电学性能的研究

利用射频磁控溅射技术在石英玻璃上制备了ZnO:Al薄膜,继而N离子注入实现薄膜的Al-N共掺杂,随后进行了不同温度和时间的热处理。并借助X射线衍射(XRD)、霍耳测试(Hall)、X射线光电能谱仪(XPS)等手段对ZnO薄膜的性能进行了表征。实验结果表明,Al-N共掺杂ZnO薄膜在578℃退火8 min表现出较稳定的p型导电,其载流子数高达1×1018～6×1018个·cm-3,对应的电阻率为1～9Ω·cm,迁移率为1～2 cm2·V-1·s-1。与单掺N相比,实现p型导电所需的退火温度有明显降低,这很可能与Al的掺入有关。此外,XPS测试结果证实大量的Ni取代O空位是薄膜p型导电的根本原因。     

退火温度对溅射Al膜微结构及光学常数的影响

用直流溅射镀膜工艺在室温Si基片上制备了250nm厚的Al膜,并用X射线衍射及反射式椭偏光谱技术,对薄膜的微结构和光学常数在不同退火温度下的变化进行了测试分析。结构分析表明:退火后的Al膜均呈多晶状态,晶体结构仍为面心立方;随着退火温度由室温20℃左右升高到400℃,薄膜的平均晶粒尺寸由22.8nm增加到25.1nm;平均晶格常数(4.047)略比标准值4.04960小。椭偏光谱测量结果表明:2600～8300光频范围内,退火温度对折射率n影响较小,对吸收系数k的影响较为明显。     

SnO2：F透明导电薄膜及其物理特性

本文中报道优质SnO_2:F透明导电薄膜的制备方法,通过对薄膜透射率和电导(方块电阻)的测量分析,研究薄膜特性与工艺条件的关系,探讨最佳工艺条件和薄膜形成规律。提出一种SnO_2:F 晶体缺陷结构模型,可以较好解释电导随 F掺杂浓度的变化结果。     

PET/丙烯腈接枝膜阻氧性能的研究

对聚对苯二甲酸乙二醇酯(PET)/丙烯腈（AN）接枝膜的阻氧性能进行了研究。结果表明，随着接枝率的增加透氧率（P）下降，P从4.25mL·mm/(m²·d)下降到2.49mL·mm/(m²·d)。接枝率相同时，低温下得到的接枝膜的阻氧性能更好。在PET膜表面接枝AN前后，其结晶度均为36%左右。聚合温度为90℃时，接枝链颗粒小、分布均匀；聚合温度为95℃时，接枝链颗粒大、分布不均匀。此外，高温和高湿度的环境中，接枝膜的阻氧性能均好于空白膜。     

Synthesis and characterization of boron-doped NiO thin films produced by spray pyrolysis

Boron-doped NiO thin films were prepared on glass substrates at 400℃ by airbrush spraying method using a solution of nickel nitrate hexahydrate. Their physical properties were investigated as a function of dopant concentration. From X-ray diffraction patterns, it is observed that the films have cubic structure with lattice parameters varying with boron concentration. The morphologies of the films were examined by using scanning electron microscopy, and the grain sizes were measured to be around 30–50 nm. Optical measurements show that the band gap energies of the films first decrease then increase with increasing boron concentration. The resistivities of the films were determined by four point probe method, and the changes in resistivity with boron concentration were investigated.