Peculiarity of magnetoresistance of discontinuous ferromagnetic thin films

The magnetoresistive properties of discontinuous ferromagnetic Fe and Co thin films deposited by electron-beam sputtering onto glass substrates at room temperature were investigated. Tunnel magnetoresistance (MR) was observed for all of the as-deposited samples. The maximum MR was observed for Fe thin films with an effective thickness of 17 nm. In the case of the Co thin films, the annealing process led to a change of the type of MR to anisotropic at Co film thicknesses (d_Co) of 15 ≤ d_Co ≤ 25 nm and to positive isotropic at thicknesses of d_Co < 15 nm. By contrast, the MR type of Fe thin films did not change.     

Magnetoresistance of the ferromagnetic nanocontacts fabricated by electrodeposition

A "T" shaped micro-gap was fabricated by mechanical polishing between two Cu film electrodes on the surface of single-sided bonded copper.A nano-gap was then fabricated in the prepared micro-gap by resistance feedback controlled electroplating.Finally Ni 80 Fe 20 ferromagnetic nanocontacts of several sizes were fabricated in the prepared nano-gap by resistance feedback controlled electroplating.The magnetoresistance of each Ni 80 Fe 20 ferromagnetic nanocontact was not related to its size.Fabrication of the Ni 80 Fe 20 ferromagnetic nanocontacts in the nano-gap can reduce the contribution of magnetostriction to the magnetoresistance.The magnetoresistance values of the Ni 80 Fe 20 ferromagnetic nanocontacts were as high as those of the Ni ferromagnetic nanocontacts.This implies that the contribution of magnetostriction to the ballistic magnetoresistance of the ferromagnetic nanocontacts can be neglected.The ferromagnetic nanocontacts fabricated in this study,and in other cases,have two anisotropic interfaces on the sides of the nanocontacts.However,the magnetic field can alter the contribution of the interaction between the two anisotropic interfaces to the ballistic magnetoresistance of the ferromagnetic nanocontacts,and this effect can not be ruled out yet.     

铁磁金属纳米点接触的磁电阻

分析和比较了运用不同制作方法制作的铁磁金属纳米点接触样品的弹道磁电阻现象,探讨了由于磁致伸缩或微磁力等机械因素引起的力致电阻效应对纳米点接触样品电阻的变化所产生的影响,在实验中得出了样品在磁场作用下所观察到的大比例的弹道磁电阻效应可能与力致电阻效应相关.     

多通道铁磁纳米线中的自旋极化和磁电阻

利用散射矩阵理论,研究了多通道纳米线结构中的量子化电导、自旋极化和弹道磁电阻.结果表明:在铁磁排列时,自旋简并解除,量子化电导以e2/h为单位变化,自旋极化率可以达到33%;随着纳米线宽度的减小,弹道磁电阻增长迅速;当线细到只有一种自旋态电子通过时,磁电阻达到无穷大,其自旋极化率为100%.     

热处理及厚度对Co90Fe10薄膜磁电阻的影响

利用电子束真空蒸发方法制备了不同厚度的Co90Fe10磁性薄膜,研究了热处理及厚度对薄膜磁电阻的影响。利用四探针法测量了薄膜的磁电阻,利用磁力显微镜观察了薄膜的磁畴结构。结果表明:热处理可以提高薄膜的磁电阻,尤其是厚度较小的样品,效果更加明显。对于厚度较大的薄膜,热处理可以改善磁织构,磁畴分布更加有序,出现了类巨磁电阻特征。     

Tunnel magnetoresistance (TMR) in ferromagnetic metalinsulator granular films

We review the recently discovered tunnel-type giant magnetoresistance (GMR) in ferromagnetic metalinsulator granular thin films, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal particles. The theoretical and experimental results including electrical resistivity, magnetoresistance and their temperature dependence are described. Limitations to the applications of the ferromagnetic metalinsulator granular films are also discussed. Additionally, a brief survey of another two magnetic properties, high-frequency property and giant Hall effect (GHE) associated strongly with the granular structures is also presented.     

Magnetic tunnel junctions (MTJs)

We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.     

钙钛矿La2/3Pb1/3MnO3外延膜的制备及磁性

利用磁控溅射法在单晶LaAlO3(100)衬底上成功地外延生长了La2/3Pb1/3MnO3薄膜.用X射线衍射仪、原子力显微镜和超导量子干涉仪、直流四探针法对其进行了表征.结果表明,薄膜为赝立方钙钛矿结构,晶格常数为3.861 nm,晶格失配度为2.1%,具有良好的单晶外延结构和较光滑的表面,且薄膜中晶粒的生长模式是"柱状"模式.居里温度为325 K,在居里温度附近,发生铁磁-顺磁转变.此材料呈现出一种典型的自旋玻璃特性.是由于应力造成的.在1.OT磁场下,其磁电阻为23.4%.     

Fe层厚度对Fe／Mo多层膜巨磁电阻的影响

详细研究了用溅射法制备的Ｆｅ／Ｍｏ多层膜系统的结构，磁性及磁电阻效应。发现当保护Ｍｏ层厚度为０．８ｎｍ、Ｆｅ层厚度ｄＦｅ由２．２ｎ，减到０．４ｎｍ时，ＧＭＲ在ｄＦｅ〈１．４ｎｍ有一迅速增加，并在ｄＦｅ＝０．９ｎｍ时达极大值，然后下降，矫顽力显示出类似的行为。     

钙钛矿La0.67Pb0.33MnO3薄膜的制备及表征

利用磁控溅射法在单晶LaAlO3(100)衬底上成功的外延生长了La0.67Pb0.33MnO3薄膜。用X射线衍射、原子力和超导量子干涉仪、振动样品磁强计对其进行了表征。结果表明,薄膜为赝立方钙钛矿结构,晶胞参数为a=3.861 nm,具有良好的单晶外延结构和光滑的表面。居里温度TC=345 K,在居里温度附近,发生铁磁-顺磁转变。此材料呈现出一种典型的自旋玻璃特性,是由于应力造成的。在室温条件下,当H=0.8T时,磁电阻效应非常明显,此现象是由于固有磁电阻效应引起的,并不是低场磁电阻效应引起的。室温下,其矫顽力只有50奥斯特。     

金属-绝缘体颗粒膜隧穿磁电阻效应的修正理论

基于Inoue模型,提出了一个修正理论来研究金属-绝缘体颗粒膜的隧穿磁电阻效应.假定颗粒膜中铁磁颗粒的尺寸服从对数正态函数,通过两个临界尺寸D1(T)和D2(T)将颗粒膜中的铁磁颗粒分为三类:超顺磁颗粒、单畴铁磁颗粒和多畴颗粒.同时引进一个参数k2来描述超顺磁颗粒与单畴铁磁颗粒对颗粒膜巨磁电阻效应影响的权重,另一个参数k1来描述基体对铁磁颗粒自旋极化率的影响.计算结果表明仅有单畴铁磁颗粒对颗粒膜的隧穿磁电阻效应起主导作用.     

外电场下有限厚铁磁层隧道结中的隧穿磁电阻

在两带模型的基础上，计算了外电场下有限厚铁磁层隧道结中的隧穿磁电阻（ＴＭＲ），结果发现：隧穿磁电阻不仅随铁磁层厚度变化而振荡，而且在适当条件下能够达到相当大的值；尽管外电场引起了隧穿磁电阻振荡的周期、位相和振幅的变化，但振荡的特征以及ＴＭＲ随两个铁磁层磁化矢量夹角的单调变化现象并没有因外电场的加入而改变。     

Mn基钙钛矿样品相图修正及庞磁电阻起因

对具有不同A位平均离子尺寸的AMnO3型Mn基钙钛矿样品的阻温关系和电子顺磁共振谱等进行了实验研究．结果表明,在温度与A位平均离子尺寸的相图上,除了普遍公认的高温顺磁绝缘体相和低温长程铁磁有序的金属相外,在两相之间还存在一过渡相,其起因源于顺磁绝缘体背景上出现短程铁磁有序的金属集团所致．研究结果还表明,外加磁场加速铁磁金属集团的生成和长大是导致庞磁电阻效应的主要原因．     

Fe-Al_2O_3纳米颗粒膜的巨磁电阻效应及微结构

采用磁控溅射方法在玻璃基片上制备了一系列的 Fe- Al2 O3 颗粒膜样品 ,对样品的巨磁电阻效应 (GMR)和磁性能进行了测量 ,并用高分辨电镜 (HRTEM)对膜中 Fe颗粒的微结构进行观察 .结果表明 :磁电阻 MR随 Fe含量而变化 ,在体积分数为 47%时获得最大值 4.0 % .45 % Fe-Al2 O3 颗粒膜的室温磁性表现为超顺磁性 ,磁电阻 MR与 - (M/Ms) 2 成正比 ,相关常数 A≈ 0 .0 3 6 .HRTEM观察表明 ,当 Fe颗粒尺寸约小于 1 nm时 ,Fe颗粒为非晶态 ,而大于该尺寸时则为晶态 .在 Fe- Al2 O3 颗粒膜体系中存在与隧道相关的 GMR,GMR的起因可归于传输电子的自旋相关的散射     

Ag-NiMnGa颗粒膜分析

利用离子束溅射技术制备了AgNiMnGa颗粒膜的系列样品.分别采用广角X射线衍射(WXRD)技术和掠入射X射线散射(GIXS)技术分析了样品的物相组成和膜面与内层结构,NiMnGa颗粒平均尺寸为5 5nm;样品膜厚度为463nm.对样品电磁性能的研究表明:颗粒膜在室温下磁场扫描测量中呈现明显的磁致电阻效应;其伴随有振荡的非线形电流电压关系揭示了介观系统具有的输运特征.     

Ultrathin permalloy films

In view of the principle of glow-discharge, ultrathin Ni₈₁Fe₁₉(12 nm) films were prepared at an ultrahigh base vacuum. The anisotropic magnetoresistance coefficient (ΔR/R %) for Ni81Fe₁₉(12 nm) film reaches 1.2%, while the value of its coercivity is 127 A/m (i.e. 1.6 Oe). Ultrathin Ni₈₁Fe₁₉(12 nm) films were also prepared at a lower base vacuum. The comparison of the structure for two kinds of films shows that the films prepared at an ultrahigh base vacuum have a smoother surface, a denser structure with a few defects; the films prepared at a lower base vacuum have a rougher surface, a porouser structure with some defects.     

A位的Sm掺杂对La0.67Sr0.33MnO3体系磁电性质的影响

通过实验研究了La0.67-xSmxSr0.33MnO3(x=0.00,0.10,0.20,0.30)体系的M-T曲线、ESR曲线、ρ-T曲线和MR-T曲线.实验结果表明:随着Sm掺杂的增加,体系从长程铁磁有序向自旋团簇玻璃态和反铁磁状态转变,Sm掺杂引起的磁结构变化和额外磁性耦合将导致CMR效应.     

巨磁电阻效应

重点综述了磁性多层膜、颗粒膜、钙钛矿型氧化物及铁磁薄膜隧道结等几种不同结构类型的巨磁电阻效应的研究现状及其进展情况,并简述了巨磁电阻的物理机制及磁传感器、随机存储器和高密度读出头等几方面的应用,还涉及到了制备这些巨磁电阻材料的常用方法,并列举了10种不同组分的巨磁电阻材料,还说明了特大磁电阻和巨磁电阻的不同。     

Magnetic properties and giant magnetoresistance effect of nanometer Fe-In2O3 granular films

Nanometer ferromagnetic metal-semiconductor matrix Fe-In2O3 granular films are fabricated by the radio frequency sputtering. Magnetic properties and the giant magnetoresistance (GMR) effect of Fex(In2O3)1x granular film samples are studied. The result shows that the magne-toresistance (MR) ratio/0 value of the granular film samples with Fe volume fraction x = 35% is 4.5% at room temperature. The temperature dependence (T = 1.5-300 K) of the MR ratio /0 value of Fe0.35(In2O3)0.65 granular films shows that /0 value below 10 K increases rapidly with the decrease of the temperature, and when T = 2 K,/0 value is 85%. Through the study of the dependence of low field susceptibility on temperature and the hysteresis loops at different temperatures, it has been found that, when the temperature decreases to a critical point TP = 10 K, the change of the structure in Fe0.35(In2O3)0.65 granular films results in the transformation of state from ferromagnetic to spin-glass-like. The remarkable increase of the MR ratio ???/??0 value of Fe0.35(In2O3)0.65 granular films below 10 K seems to arise from the peculiar conducting mechanism of the granular film samples in the spin-glass-like state.     

Effects of tip separation and orientation on negative differential resistance in boron-doped carbon-nanotube-based molecular junctions

We investigate using the Landauer formalism,which combines both the non-equilibrium Green’s function and density functional theory,the effects of separation and orientation between two electrodes of boron-doped capped-carbon-nanotube-based molecular junctions on negative differential resistance.The results show that this negative differential resistance behavior is strongly dependent on the separation and orientation between the two electrodes.A gap width of 0.35 nm and maximal symmetry achieves the best negative differential resistance behavior.