CeO2 thin films grown on biaxially textured nickel (001)

CeO₂ films have been grown on biaxially textured Ni substrates at various temperatures. The results show that CeO₂ films without IBAD are dominated by (111) orientation from room temperature to 800°C while the preferential orientation of CeO₂ films with IBAD is (001) at lower deposition temperature and (111) at deposition temperature higher than 450°C. CeO₂ films with better in-plane texture and out-of-plane orientation can be grown at 360°C with 240 eV ion energy and 200 μA/cm² ion current density.