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Al2 O3掺杂对Ce0.8 Gd0.15 Y0.05 O2-δ固体电解质的微结构与电性能的影响
引用本文:韩健,铁丽,林晓敏.Al2 O3掺杂对Ce0.8 Gd0.15 Y0.05 O2-δ固体电解质的微结构与电性能的影响[J].北华大学学报(自然科学版),2014,0(4):458-462.
作者姓名:韩健  铁丽  林晓敏
作者单位:北华大学物理学院,吉林 吉林,132033;北华大学物理学院,吉林 吉林,132033;北华大学物理学院,吉林 吉林,132033
基金项目:吉林省教育厅科学技术研究项目(项目编号:2014181)
摘    要:采用溶胶-凝胶法制备了AlO1.5掺杂浓度为0.5%,1.0%,2.0%的AlO1.5/Ce0.8Gd0.15Y0.05O2-δ固体电解质材料,利用X射线衍射(XRD)、扫描电子显微镜(SEM)和交流阻抗谱研究了Al2O3掺杂对Ce0.8Gd0.15Y0.05O2-δ微观结构及电性能的影响,结果表明:800℃焙烧的所有粉末样品均为单相立方萤石结构,在所有样品中,AlO1.5掺杂量为0.5%的样品晶粒均匀,较致密,交流阻抗谱测试表明掺杂AlO1.5(x=0.5%)使Ce0.8Gd0.15Y0.05O2-δ晶界电阻减小,晶界电导率增高;当AlO1.5掺杂量x≥1%时,Al2O3对晶界的阻塞作用使晶界电导率降低,在所有样品中Ce0.8Gd0.15Y0.05O2-δ/0.5%AlO1.5晶界电导率最高(σ700℃=8.12×10-3S/cm),说明在Ce0.8Gd0.15Y0.05O2-δ少量掺杂AlO1.5(x=0.5%)具有烧结助剂和晶界清除剂的作用.

关 键 词:固体电解质  X射线衍射(XRD)  扫描电子显微镜(SEM)  电导率

Effect of Al2 O3 Dopant on Microstructure and Electrical Properties of Ce0. 8 Gd0. 15 Y0. 05 O2-δ Solid Electrolytes
Han Jian,Tie Li,Lin Xiaomin.Effect of Al2 O3 Dopant on Microstructure and Electrical Properties of Ce0. 8 Gd0. 15 Y0. 05 O2-δ Solid Electrolytes[J].Journal of Beihua University(Natural Science),2014,0(4):458-462.
Authors:Han Jian  Tie Li  Lin Xiaomin
Institution:( Physics College of Beihua University, Jilin 132013, China)
Abstract:AlO1.5/Ce0.8Gd0.15Y0.05O2-δ solid electrolytes,with AlO1.5 concentrations ranging from 0. 5% to 2%were prepared by sol-gel method. The effects of AlO1. 5 doping on the microstructure and conductivity were discussed by means of X-ray diffraction ( XRD ) , scanning electron microscopy ( SEM ) and AC impedance spectroscopy. The results show that all powders calcined at 800℃ are crystallized in a single cubic fluorite structure. The sample doping with 0. 5% AlO1. 5 is more uniform and relative dense. AC impedance spectra analysis suggests that AlO1.5(x=0. 5%)make the grain boundary resistance of Ce0.8Gd0.15Y0.05O2-δdecrease and the grain boundary conductivity increase. When AlO1. 5 dopant concentration is over 1%, the grain boundary conductivity begins to reduce because of blocking effect of AlO1. 5 particles at grain boundaries in all samples. The grain boundary conductivity of AlO1. 5/ Ce0. 8 Gd0. 15 Y0. 05 O2-δ reaches the maximum,σ700℃ =8. 12 ×10-3 S/cm, which suggests that doping with a little AlO1.5(x=0. 5%)in Ce0.8Gd0.15Y0.05O2-δhave the effective sintering aids and grain boundary scavengers.
Keywords:solid electrolyte  XRD  SEM  conductivity
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