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富Si-SiO_2薄膜的制备、结构及光致发光特性的研究
引用本文:吴雪梅,董业民,汤乃云,叶春暖,诸葛兰剑,宁兆元,姚伟国.富Si-SiO_2薄膜的制备、结构及光致发光特性的研究[J].苏州大学学报(医学版),2001(1).
作者姓名:吴雪梅  董业民  汤乃云  叶春暖  诸葛兰剑  宁兆元  姚伟国
作者单位:苏州大学理学院物理系!江苏苏州215006
摘    要:利用双离子束溅射沉积共溅射方法制备了富Si SiO2 薄膜 ,研究了沉积参数、时间、工作气压PAr、基片温度等对沉积速率的影响 ,用TEM和XRD分析了样品的结构 ,当基片温度Ts <4 50℃时 ,所制备一系列样品均为非晶结构 ,当沉积基片温度较高时 (Ts ≥4 50℃ ) ,薄膜样品中才出现Si的颗粒 我们还分析了样品的室温光致发光现象 ,从PL谱中可以看出 ,样品有~ 32 0nm、~ 4 10nm、~ 560nm和~ 630nm四个PL峰 ,并对其发光机理进行初步探讨

关 键 词:共溅射  富Si-SiO2薄膜  光致发光

A study on the preparation, structure and photoluminescence property of silicon-rich silica
WU Xue-mei,DONG Ye-min,TANG Nai-yun,YE Chun-nuan,ZHUGE Lan-jian,NING Zhao-yuan,YAO Wei-guo.A study on the preparation, structure and photoluminescence property of silicon-rich silica[J].Journal of Suzhou University(Natural Science),2001(1).
Authors:WU Xue-mei  DONG Ye-min  TANG Nai-yun  YE Chun-nuan  ZHUGE Lan-jian  NING Zhao-yuan  YAO Wei-guo
Abstract:The composite films of Si-rich silica are prepared by dual ion beam co-sputtering method from a composite target in argon atmosphere. The influence of depositing condition on the depositing rate and the structure of the films are studied by the aid of TEM and XRD. The photoluminescence (PL) spectra are found to have 4 luminescent band peak at 320nm,410nm,560nm,and 630nm,respectively,at room temperature. The mechanism of PL is discussed.
Keywords:co-sputtering  Si-rich silica films  photoluminescence (PL)
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