掺铟氧化锡“之”字形纳米线结构及发光性能研究

掺铟氧化锡(ITO)是一种宽带隙透明导电半导体材料,广泛地应用于各种平板显示器和气敏元件等。该文利用碳热还原方法成功制备出铟掺氧化锡"之"字形掺铟氧化锡纳米线结构,借助X射线衍射分析仪、透射电子显微镜、场发射扫描电子显微镜以及能谱分析观测纳米线的结构形貌以及成分分析,提出了一种"之"字形结构可能的形成模型,并进一步研究了氧化铟锡在室温下的光致发光性能;光致发光光谱主要包含有5个发光峰,分别是紫光峰(400 nm)、蓝光峰(452 nm,470 nm)、青光峰(487 nm,497 nm)。

Synthesis and optical properties of single crystalline In-doped SnO_2 zigzag-shaped nanostructures

Single crystalline In-doped SnO_2 zigzag-shaped nanostructures were synthesized successtully by a carbothemal reduction method with vapor-solid(VS)growth.The structures,morphologies,and comDositions of the calcined products have been characterized by powder X-ray diffraction(XRD),transmission electron microscopy(TEM),field emission scanning electron microscopy(FESEM),energy dispersive X-ray(EDX)analysis and photoluminescence spectroscopy(PL).The results reveal that the as-svnthesized In-doped SnO_2 zigzag-shaped nanostructures have tetragonal rutile structure with high crvstallinities and lengths of up to tens of micrometers.A possible growth mechanism for the fonnation of different morphologies was proposed.The photoluminescence property of the zigzag nanostructures at room temperature was also investigated,and five peaks were obtained at 400 nm,452 nm,470 nm,487 nm and 497 nm,respectively.