| 硅基半导体中埋置硅量子点的低温生长与发光研究 |
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| 引用本文： | 黄娆,马利波.硅基半导体中埋置硅量子点的低温生长与发光研究[J].山西大学学报(自然科学版),2007,30(2):193-200. |
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| 作者姓名： | 黄娆 马利波 |
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| 作者单位： | 中国科学院物理研究所,北京,100080 |
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| 基金项目： | 国家自然科学基金;国家高技术研究发展计划(863计划) |
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| 摘 要： | 在硅基半导体中埋置的硅量子点因量子限域效应而具有光致发光的性能,是一种实现硅基光电集成很有前途的材料.文章介绍了此类复合薄膜的可控生长,并对其发光进行了研究.
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| 关 键 词： | 硅 量子点 光致发光I量子限域效应 |
| 文章编号： | 0253-2395（2007）02-0193-08 |
| 修稿时间： | 2007-03-072007-04-18 |
Low Temperature Growth and Luminescence Study of Silicon Based Compound Films with Silicon Quantum Dots Embedded |
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| HUANG Rao,MA Li-bo.Low Temperature Growth and Luminescence Study of Silicon Based Compound Films with Silicon Quantum Dots Embedded[J].Journal of Shanxi University (Natural Science Edition),2007,30(2):193-200. |
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| Authors: | HUANG Rao MA Li-bo |
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| Institution: | Institute of Physics ,Chinese Academy of Sciences ,Beijing 100080 ,China |
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| Abstract: | Photoluminescence can be obtained from silicon based on the compound films with silicon quantum dots embedded due to quantum confinement effect.The low temperature growth and luminescence study of such films were introduced.Our as-deposited films exhibited high efficiency photoluminescence and extremely short lifetime |
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| Keywords: | silicon quantum dot photoluminescence quantum confinement effect |
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