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长脉冲激光与硅材料相互作用的温度场
引用本文:付耀龙,温泽胜,张喜和.长脉冲激光与硅材料相互作用的温度场[J].长春大学学报,2012(10):1212-1214,1224.
作者姓名:付耀龙  温泽胜  张喜和
作者单位:[1]长春理工大学,长春130022 [2]中国石油集团东北炼化工程有限公司吉林机械制造分公司,吉林省吉林市132000
基金项目:国防预研基金项目(A3620060122)
摘    要:采用Matlab软件数值模拟了长脉冲高斯激光辐照硅材料的径向与全场温度场分布,分析了激光能量与辐照时间对硅材料温升的影响。模拟结果表明:靶材温升区域主要集中在激光半径的辐照区域,并且温升区域随激光能量和辐照时间的增大而扩大,随着径向与轴向方向的延伸,温升逐渐减小。

关 键 词:长脉冲激光    温度场

Temperature Field of Long Pulse Laser and Si Material Interaction
FU Yao-long,WEN Ze-sheng,ZHANG Xi-he.Temperature Field of Long Pulse Laser and Si Material Interaction[J].Journal of Changchun University,2012(10):1212-1214,1224.
Authors:FU Yao-long  WEN Ze-sheng  ZHANG Xi-he
Institution:1. Changchun University of Science and Technology, Changchun 130022, China; 2. Jilin Machinery Manufacture Branch,Petro China Northeast Refining and Chemicals Engineering Co. ,Ltd. , Jilin 132000; China)
Abstract:Radial and whole-field temperature distribution of Si material irradiated by gauss laser with long pulse are numerically simu- lated by Matlab, the influence of laser energy and irradiating time on Si material is analyzed. The simulation results show that the tem- perature rising zone of targets is mainly concentrated in the irradiating zone of laser radius, and the temperature rising zone will enlarge as the laser energy and irradiating time increase, while the temperature rising will decrease along with stretching of the radial and axial direction.
Keywords:long pulse laser  Si  temperature field
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