| 一种闪存适用新型高速高驱动电压泵设计 |
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| 引用本文： | 苏志强,俞军,程君侠.一种闪存适用新型高速高驱动电压泵设计[J].复旦学报(自然科学版),2005,44(6):935-940. |
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| 作者姓名： | 苏志强 俞军 程君侠 |
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| 作者单位： | 复旦大学,专用集成电路与系统国家重点实验室,上海,200433 |
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| 摘 要： | 提出了一种适用于低电压供电Flash Memory的新型高速高驱动电压泵的设计方法．在分析电压泵工作原理和结构演变并指出当前实现方法在驱动和响应上的制约因素的基础上，结合目前先进Flash Memory工作电压和工作要求，提出了结合三阱工艺和CTS方法以消除体效应和阈值电压降从而提高性能的四相位电荷泵设计方法，专门对时钟驱动进行的优化，提高了响应速度．最后在0．18μm，3V工艺上仿真并和几种现存实现方法对比得以验证．
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| 关 键 词： | 半导体技术 电压泵 闪存 低电压 三阱 |
| 文章编号： | 0427-7104（2005）06-0935-06 |
| 收稿时间： | 08 12 2004 12:00AM |
| 修稿时间： | 2004-08-12 |
A Novel High Driving Charge Pump with High Speed for Flash |
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| SU Zhi-qiang,YU Jun,CHENG Jun-xia.A Novel High Driving Charge Pump with High Speed for Flash[J].Journal of Fudan University(Natural Science),2005,44(6):935-940. |
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| Authors: | SU Zhi-qiang YU Jun CHENG Jun-xia |
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| Abstract: | A novel charge pump used in low voltage flash memory is proposed.Based on the analysis of operation mechanism and development of the charge pump,as well as the factors limiting its efficiency and speed,a new method using triple-well structure and charge transfer switches(CTS) is suggested to eliminate threshold voltage drop and body effect.The clock driving circuit is specially optimized to lower output resistance,and speed up the response.Compared with conventional implementations,simulation shows the improved efficiency and speed of the present design. |
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| Keywords: | CTS |
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