| 聚焦离子束在精细加工中引起损伤的分析 |
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| 引用本文： | 宋云,陆海纬,王振雄,郑国祥,李越生,曾.聚焦离子束在精细加工中引起损伤的分析[J].复旦学报(自然科学版),2007,46(1):117-122. |
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| 作者姓名： | 宋云 陆海纬 王振雄 郑国祥 李越生 曾 |
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| 作者单位： | 复旦大学,材料科学系,上海,200433 |
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| 基金项目： | 作者感谢上海先进半导体的龚大卫老师给予实验上的帮助! |
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| 摘 要： | 微分析技术已经成为微电子产业发展的重要技术支撑,FIB(focusedion beam)结合了精细加工技术和微分析技术,具有在亚微米线度上的微细加工和高分辨率成像的能力,成为强有力的TEM(transmission electron microscope)制样工具以及电路修补的有力工具.同时,FIB辐照对样品结构的损伤以及器件性能的影响受到广泛的关注.为使实际FIB的工作更优化,更有针对性,从而确保不同器件在FIB加工后的可靠性,从研究FIB辐射对材料结构的损伤入手,针对两种不同类型的晶体管(常规工艺NMOS晶体管和埋沟工艺PMOS晶体管),进行了FIB辐照下的电学性能对比.较常规工艺的NMOS晶体管,埋沟工艺的PMOS晶体管在跨导和迁移率等参数的变化情况与前者相似,但是在阈值电压变化,辐照损伤修复方面,后者显示出独特的性能.
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| 关 键 词： | 聚焦离子束 TEM制样 非晶层 阈值电压 埋沟PMOS |
| 文章编号： | 0427-7104（2007）01-0117-06 |
| 修稿时间： | 2006-12-04 |
Analysis of Damage Induced by FIB Irradiation in Microprocess |
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| SONG Yun,LU Hai-wei,WANG Zhen-iong,ZHENG Guo-xiang,LI Yue-sheng,ZENG Wei.Analysis of Damage Induced by FIB Irradiation in Microprocess[J].Journal of Fudan University(Natural Science),2007,46(1):117-122. |
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| Authors: | SONG Yun LU Hai-wei WANG Zhen-iong ZHENG Guo-xiang LI Yue-sheng ZENG Wei |
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| Institution: | Department of Materials Science, Fudan University, Shanghai 200433, China |
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| Abstract: | The irradiation effect of Focused Ion Beam (FIB) on preparation of TEM (transmission electron microscopy) sample was studied. Two types of MOS transistors, normal NMOS transistor and PMOS transistor with buried channel, were analyzed. The structural damage of the devices induced by FIB irradiation was studied. The change of transconductance and mobility in PMOS transistors with buried channel was similar to that of NMOS transistors, while the PMOS transistors showed their characteristic of threshold voltage self-fixing. |
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| Keywords: | focused ion beam TEM sample amorphous layer threshold voltage PMOS with buried channel |
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