| 75伏功率Trench MOSFET设计 |
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| 引用本文： | 王庚.75伏功率Trench MOSFET设计[J].辽宁大学学报(自然科学版),2010,37(4):347-350. |
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| 作者姓名： | 王庚 |
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| 作者单位： | 营口边防检查站,辽宁营口115000 |
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| 摘 要： | 简单介绍了Trench MOSFET的基本结构和工作原理.以漏源耐压75伏器件为例,详细的讨论该类器件的设计方法.依据一定的器件电参数指标,给出了相应的一套完整的结构设计数据.从外延片的选择到各类纵向和横向结构参数的确定都给出了具体的计算方法和最终结果.
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| 关 键 词： | Trench MOSFET 设计 |
Design of a 75V Power Trench MOSFET |
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| WANG Geng.Design of a 75V Power Trench MOSFET[J].Journal of Liaoning University(Natural Sciences Edition),2010,37(4):347-350. |
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| Authors: | WANG Geng |
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| Institution: | WANG Geng ( Yingkou Border Checkpoint, Yingkou 115000, Liaoming, China) |
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| Abstract: | The basic physical structure and working principles of the TrenchMOSFET were discussed briefly. A 75V - drain - source - Breadown - voltage device was designed in detail, as an example, to demonstrate the design methodology for this kind of components. A complete set of physical structure parameters were given according to certain device electrical characteristics. Concrete computing methods, and also final results, were illustrated for choosing various parameters, from epi -wafer, to vertical and lateral structures. |
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| Keywords: | Trench MOSFET Design |
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