| 晶体管二次击穿特性研究 |
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| 引用本文： | 尹光,周涛,石广源.晶体管二次击穿特性研究[J].辽宁大学学报(自然科学版),2009,36(1):30-34. |
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| 作者姓名： | 尹光 周涛 石广源 |
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| 作者单位： | 1. 海军驻沈阳地区军事代表室,辽宁,沈阳,110034
2. 辽宁大学,物理学院,辽宁,沈阳,110036 |
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| 基金项目： | 沈阳市科技局科研项目 |
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| 摘 要： | 主要从器件的结构与制造角度，详细地讨论了与抗烧毁有关的大功率开关晶体管的二次击穿及其改善措施，并介绍了一种新型的大功率晶体管结构，对投片生产具有实际的指导意义．
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| 关 键 词： | 大功率晶体管 二次击穿 电流集边效应 挖槽 |
The Second Breakdown of Transistors and the Improvement Measures |
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| YIN Guang,ZHOU Tao,SHI Guang-yuan.The Second Breakdown of Transistors and the Improvement Measures[J].Journal of Liaoning University(Natural Sciences Edition),2009,36(1):30-34. |
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| Authors: | YIN Guang ZHOU Tao SHI Guang-yuan |
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| Institution: | 1.Navg Garrison Shenyang Distrct Aviation Strategy Agent Office;Shenyang 110034;China;2.The College of Physics;Liaoning University;Shenyang 110036;China |
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| Abstract: | In this article,from the device's structure and manufacturing the second breakdown of the anti-burnirg power switching transistor was discussed and a new type of high-power transistors was introduced,which has the guidance mean to the vote production. |
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| Keywords: | high-power transistor second breakdown current set-effect etch trough |
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