| 真空蒸发制备（Cd,Zn）S薄膜及性能研究 |
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| 引用本文： | 荣利霞,李蓉萍.真空蒸发制备（Cd,Zn）S薄膜及性能研究[J].内蒙古大学学报(自然科学版),1999,30(4):478-481. |
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| 作者姓名： | 荣利霞 李蓉萍 |
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| 作者单位： | 内蒙古大学物理学系 |
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| 摘 要： | 用真空蒸发技术在玻璃衬底上获得了透明的（Ｃｄ，Ｚｎ）Ｓ薄膜，薄膜为纤锌矿结构，具有沿〔００２〕晶向的择优生长取向．薄膜的性能随Ａ值（Ａ＝ＺｎＳＺｎＳ＋ＣｄＳ）和蒸发条件而变化，薄膜为ｎ型材料，呈高阻状态，在可见光范围内有良好的透过率
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| 关 键 词： | （Cd.Zn）S薄膜 真空蒸发 光电器件 |
Property Study of (Cd,Zn)S Thin Films Prepared by Vacuum Evaporation |
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| RONG Li xia,LI Rong ping,YANG Di.Property Study of (Cd,Zn)S Thin Films Prepared by Vacuum Evaporation[J].Acta Scientiarum Naturalium Universitatis Neimongol,1999,30(4):478-481. |
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| Authors: | RONG Li xia LI Rong ping YANG Di |
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| Abstract: | The (Cd,Zn)S thin films with wartzite structure have been obtaind by vacuum evaporation technique on the substracte of glass.The thin films have a preferred orientation along crystal plane 002 .The properties of the films varies with A (A =ZnSZnS CdS) and evaporation condition.The films are n type and high resistivity and have high transmissivity in visible spectral range. |
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| Keywords: | the (Cd Zn)S thin films vacuum evaporation technique photoelectric devices |
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