| 等离子体腐蚀去胶的探讨 |
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| 引用本文： | 王中文,付强.等离子体腐蚀去胶的探讨[J].辽宁大学学报(自然科学版),2006,33(3):232-234. |
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| 作者姓名： | 王中文 付强 |
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| 作者单位： | 辽宁大学,物理系,辽宁,沈阳,110036 |
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| 摘 要： | 首先介绍等离子体腐蚀与采用湿法腐蚀相比所具有的优点，并且在简化工艺流程和缩短工艺周期方面作出细致的说明；对氧气流量为0．05L／min～0．5L／min时腐蚀光刻胶的整个过程中的腐蚀现象进行了描述，绘制出了腐蚀速率曲线图，并进行了理论分析。
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| 关 键 词： | 等离子体 等离子体腐蚀 自由基 |
| 文章编号： | 1000-5846（2006）03-0232-03 |
| 收稿时间： | 2005-11-07 |
| 修稿时间： | 2005-11-07 |
The Research on Plasma Etching Photoresists |
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| WANG Zhong-wen,FU Qiang.The Research on Plasma Etching Photoresists[J].Journal of Liaoning University(Natural Sciences Edition),2006,33(3):232-234. |
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| Authors: | WANG Zhong-wen FU Qiang |
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| Institution: | Department of Physics, Liaoning University , Shenyang 110036, China |
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| Abstract: | This paper firstly introduces the advantages of the plasma erosion compared with the wet erosion, consequently demonstrates the aspects of simplifying the craft process and shortening the craft period, and depicts the phenomena of etching photoresists in the condition of 0.05 L/min-0.5 L/min flux of oxygen, then portrays the curve of the erosion speed and assays the curve ideally. |
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| Keywords: | plasma the plasma corroding free radical |
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