| 关于一维掺杂晶体表面态 |
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| 引用本文： | 余超凡,周义昌.关于一维掺杂晶体表面态[J].中山大学学报(自然科学版),1991,30(3):101-107. |
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| 作者姓名： | 余超凡 周义昌 |
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| 作者单位： | 广东教育学院物理学系，中山大学物理学系 |
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| 摘 要： | 本文应用格林函数方法讨论一维掺杂晶体的表面态。证明:断短键时存在零能表面态,而不论断短键或长键,均出现非零能局域表面态。当掺杂吸收于短键时,若U>(J_0-J_1)则两个束缚态出现于能隙内,若U<(J_0-J_1)则出现于带外,且在隙中心出现中间隙态。当掺杂吸收于长键,此时存在4个束缚态。
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| 关 键 词： | 二聚化 电子表面态 |
Surface State Characteristics of One-Dimension Dopant Crystal |
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| Yu Chaofan,Zhou Yichang.Surface State Characteristics of One-Dimension Dopant Crystal[J].Acta Scientiarum Naturalium Universitatis Sunyatseni,1991,30(3):101-107. |
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| Authors: | Yu Chaofan Zhou Yichang |
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| Institution: | Yu Chaofan,Zhou Yichang Department of Physics,Guangdong Educational College,Guangzhou |
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| Abstract: | The electron surface states caused by dopants in polyacetylence for dimerized one-dimension crystal are investigated by means of Green's function. It is shown that, when the dopant sits near the double bond (single bond cut-off), two bound states are in the gap for U>(J_0-J_1) or outside the bands for U<-(J_0-J_1). Furthermore a mid-gap state emerges for U=2.948 eV. If the dopant is absorbed at the single bond (double bond cut-off), two of the four formed bound states are in the gap for U>(J_0 J_1) with a midgap broken state emergeing in the gap center, while the other two are outside the bands for U<- (J_0 J_1). |
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| Keywords: | dimerization electron surface state |
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