锡在金电极上的欠电位单层沉积的分析应用

用循环伏安法研究了Sn2 在金盘电极上的欠电位沉积.在特别提纯的1 mol/L HCl支持电解质溶液中,Sn2 在金盘电极上可以产生清晰的欠电位沉积峰和本体沉积峰.基于Au/Sn欠电位体系优良的电化学特性,发展了一种选择性好、灵敏度高的电化学分析方法.Sn2 浓度在1.96×10-10～2.91×10-s mol/L范围内与峰电流有线性关系.连续7次测定1.0×10-9 mol/L Sn2 得到的相对标准偏差为5.06%.该方法已用于实际样品的测定,所得结果与原子发射光谱(ICP-AES)所得数据相吻合.

The analytical application of the underpotential deposition tin monolayers on gold electrode

The underpotential deposition(UPD ) of Sn2+ on gold disc electrode was studied using cyclic voltammetry. In this case a new method for determining Sn2+ was developed. A high sensitive electroanalytical technique, the differential pulse anodic stripping voltammetry(DPASV), was used. Factors affecting the Sn2+ UPD and stripping steps were investigated and an optimized analytical procedure was proposed. The calibration plot for Sn2+ concentration in a wider range 1.96× 10-10 ～2.91×10-s mol/L was obtained. The developed method was applied to tin determination in the tinplate sample and method was validated with inductive coupled plasma atomic emission spectrometry(ICP-AES).