| 多孔硅激光 |
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| 引用本文： | 黄伟其,张荣涛,王海旭,金锋.多孔硅激光[J].贵州科学,2008,26(4). |
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| 作者姓名： | 黄伟其 张荣涛 王海旭 金锋 |
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| 作者单位： | 贵州光电子技术与应用重点实验室,贵州大学,贵州,贵阳,550025 |
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| 基金项目： | 国家自然科学基金资助项目(10764002) |
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| 摘 要： | 我们用波长为1064nm的纳秒脉冲激光在硅表面打出小孔结构,然后再做高温退火处理形成了硅的纳米氧化低维结构.在514nm激光泵浦下,发现该结构在700nm和750nm处有很强的受激辐射发光(PL).实验中发现:该PL发光有明显的阈值表现和激光增强效应,证明该PL发光确实是光致受激发射.计算給出氧化界面态模型来解释该光致受激发光机理,其中Si=O和Si-O-S的键合可以产生氧化陷阱态,关键在于该氧化陷阱态与价带顶空穴态之间能够形成粒子数反转.为硅基上激光器件的光电子集成研发开辟了新的途经.
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| 关 键 词： | 光致荧光 多孔硅 陷阱态 |
LASER ON POROUS SI |
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| HUANG Wei-qi,HANG Rong-tao,WANG Hai-xu,JIN Feng.LASER ON POROUS SI[J].Guizhou Science,2008,26(4). |
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| Authors: | HUANG Wei-qi HANG Rong-tao WANG Hai-xu JIN Feng |
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| Institution: | Key Lab.of Photoelectron Technology and Application;Guizhou University;Guiyang 550025 |
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| Abstract: | The photoluminescence(PL) of nanocrystal present in porous silicon shifts from the near infrared to the ultraviolet depending on the size when the surface is passivated with Si-H bonds.After oxidation,the center wavelength of PL band is pinned in the region of 700nm~750nm and its intensity increases obviously.Calculation shows that trap electronic states appear in the band gap of the smaller nanocrystal when Si = O bonds or Si-O-Si bonds are formed.The changes in PL intensity and wavelength can be explained... |
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| Keywords: | photoluminescence porous silicon trap states |
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