| 埋入SiO_2中C团光致发光机理的研究 |
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| 引用本文： | 薛华,于积贞.埋入SiO_2中C团光致发光机理的研究[J].西北民族学院学报,1998(1). |
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| 作者姓名： | 薛华 于积贞 |
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| 作者单位： | 西北民族学院物理系，西北民族学院物理系 兰州，730030，兰州，730030 |
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| 摘 要： | 用射频共溅射方法和退火工艺制备厂埋入 SiO_2中碳的复合薄膜,并在室温下得到了强的可见光致发光谱(峰值在2.136eV)。用拉曼散射谱和红外透射谱对样品进行了测量,分析厂复合膜的微结构,研究了不同碳含量对光致发光谱的影响,并对 C-SiO_2复合薄膜的光致发光机理进行了讨论。
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| 关 键 词： | C 团 SiO_2 光致发光 |
A Study on Visible Photoluminescen Mechanism for Carbon Clusters Embedded SiO_2 |
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| Xue Hua Yu jizhen.A Study on Visible Photoluminescen Mechanism for Carbon Clusters Embedded SiO_2[J].Journal of Northwest Minorities University(Natural Science ),1998(1). |
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| Authors: | Xue Hua Yu jizhen |
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| Abstract: | Carbon embedded SiO_2 films are prepared by co-sputtreing technique. Photoluminescence(PL)measurement show that strong visible PL is produced upon annealing treatment in room temperature.Raman and IR transmission spectra of samples are measured for analysing microstructure of the films.The effects of carbon content on Photoluminescence spectra are researched and the photoluminescence mechanism of the films are also discussed. |
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| Keywords: | C cluters Photoluminecence SiO_2 |
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