| SOI材料的场助键合技术 |
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| 引用本文： | 吕世骥,蔡跃明.SOI材料的场助键合技术[J].东南大学学报(自然科学版),1991,21(5):9-15. |
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| 作者姓名： | 吕世骥 蔡跃明 |
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| 作者单位： | 东南大学微电子中心，东南大学微电子中心，东南大学微电子中心，东南大学微电子中心，南京通讯工程学院 |
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| 摘 要： |
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| 关 键 词： | SOI材料 场助键合 表面处理 |
The Technology of Field-Assisted Bonding fot SOI Materials |
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| Lu Shiji,Hugang Qingan,Huang Xueliang,Yuan Jing,Cai Yueming Microelectronic Center Nanjing Institute of Communication Engineering.The Technology of Field-Assisted Bonding fot SOI Materials[J].Journal of Southeast University(Natural Science Edition),1991,21(5):9-15. |
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| Authors: | Lu Shiji Hugang Qingan Huang Xueliang Yuan Jing Cai Yueming Microelectronic Center Nanjing Institute of Communication Engineering |
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| Institution: | Lu Shiji;Hugang Qingan;Huang Xueliang;Yuan Jing;Cai Yueming Microelectronic Center Nanjing Institute of Communication Engineering |
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| Abstract: | The technology of field assisted bonding for SOI materials includ-ing Si/SiO~2-SiO~2/Si, Si-SiO~2/Si, Si-quartz and GaAs-glass is introduced in this paper. The bonding area, bonding strength, pattern of bonding cross-sections and electrical performances were detected by various test methods.The mechanism of field-assisted bonding was explored. The surface treat-ment of materials for bonding by plasma is introduced. And an example of SOI material by field-assisted bonding is given. |
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| Keywords: | plasma surface treatment / field-assisted bonding SOI material |
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