| 脉冲电压下介质膜的击穿寿命 |
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| 引用本文： | 范焕章,王刚宁,翁丽敏,汪静,黎想.脉冲电压下介质膜的击穿寿命[J].华东师范大学学报(自然科学版),1999(3). |
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| 作者姓名： | 范焕章 王刚宁 翁丽敏 汪静 黎想 |
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| 作者单位： | 华东师范大学电子科学技术系!上海200062 |
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| 摘 要： | 该文测量了电应力作用下栅介质膜中陷阱电荷积累、以及在撤除应力后陷阱电荷减少的规律，在此基础上提出了解释脉冲应力下栅介质膜击穿寿命的模型。并对样品在直流电压与脉冲电压下的击穿寿命进行测量比较，发现随着脉冲频率的增加，栅介质膜击穿寿命增加，实验结果与模型预期的相符
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| 关 键 词： | 脉冲应力 介质膜 击穿 寿命 |
The Breakdown Lifetime of Gate Oxides under Pulsed Voltage |
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| Fan Huanzhang,Wang Gangning,Wong Limin,Wang Jing,Li Xiang.The Breakdown Lifetime of Gate Oxides under Pulsed Voltage[J].Journal of East China Normal University(Natural Science),1999(3). |
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| Authors: | Fan Huanzhang Wang Gangning Wong Limin Wang Jing Li Xiang |
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| Abstract: | Based on the analysis of charge trapping and detrapping phenomenon in the gate oxide, a model is established that can predict the breakdown lifetime of gate oxides under pulsed voltage. According to the model, the higher the pulse frequency, the longer the breakdown lifetime. The results predicted by the model are consistent with those of the experiments. |
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| Keywords: | pulsed voltage dielectric film breakdown lifetime |
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