强冲击2A12铝板产生等离子体对逻辑芯片模块的电磁毁伤

为研究强冲击2A12铝板产生等离子体对逻辑芯片模块的电磁毁伤效应，分别以航天控制系统中常用的CD54ACT32和CD74HC4075逻辑芯片模块为研究对象，利用二级轻气炮加载系统、朗缪尔三探针诊断系统和逻辑芯片模块逻辑状态的测试系统，开展了6组给定实验条件和方位角下弹丸高速撞击2A12铝板产生等离子体对逻辑芯片模块的毁伤效应实验，得到了等离子体电子温度和电子密度随时间的变化并通过实验数据拟合给出了电子温度及电子密度随时间变化的函数关系式.实验结果表明：在相同弹丸入射角度、相近撞击速度条件下高速撞击2A12铝板产生的等离子体造成了TTL电平信号CD54ACT32逻辑芯片模块的暂态毁伤和永久毁伤；等离子体对CMOS电平信号CD74HC4075只产生了暂态毁伤.证明了给定实验条件下CMOS逻辑芯片模块在抗等离子体毁伤方面强于TTL逻辑芯片模块.

Electromagnetic Damage of Logic Chip Module by Plasma Generated by Strong Impact 2A12 Aluminum Plate

To investigate the electromagnetic damage of plasma induced by 2A12 aluminum alloy subjected to strong shock loading to the logic chip modules, CD54ACT32 and CD74HC4075 logic chip modules which are commonly used in the aerospace control system were studied by applying two-stage light gas gun, a triple Langmuir probe and logic state test system of logic chip modules, 6 sets of experiments on the damage of the plasma induced by the 2A12 aluminum subjected to strong shock loading on the logic chip modules under the given experimental conditions have been implemented, and the variation of plasma electron temperature and density against time was obtained. Moreover, the function of electron temperature and density with time was obtained by fitting the experimental data. The results reveals that transient and perpetual damage to TTL level signal CD54ACT32 logic chip modules were detected by the plasma induced by 2A12 aluminum alloy subjected to strong shock loading under the given incidence angle of the projectile and similar impact velocities. However, only transient damage to CMOS level signal CD74HC4075 was observed, verifying that CMOS logic chip modules is superior to TTL logic chip modules in terms of anti-damage of plasma under the given experimental conditions.