| 等离子增强型化学气相淀积氮化硅的淀积 |
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| 引用本文： | 唐元洪.等离子增强型化学气相淀积氮化硅的淀积[J].湖南大学学报(自然科学版),1996,23(1). |
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| 作者姓名： | 唐元洪 |
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| 作者单位： | 湖南大学应用物理系 |
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| 摘 要： | 等离子增强型化学气相淀积（ＰＥＣＶＤ）氮化硅是目前器件唯一能在合金化之后低温生长的氮化硅．本文研究了各种波积参数对薄膜性能的影响，提出了淀积优质氮化硅钝化膜的条件，对折射率随生长速率而变化给出了新的解释．
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| 关 键 词： | 等离子，氮化硅，淀积 |
Deposition of Plasma Enhancement Chemical Vapour Deposition Silicon Nitride |
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| Tang Yuanhong.Deposition of Plasma Enhancement Chemical Vapour Deposition Silicon Nitride[J].Journal of Hunan University(Naturnal Science),1996,23(1). |
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| Authors: | Tang Yuanhong |
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| Abstract: | in the meantime Plasma Enhancement Chemical Vapour Deposition (PECVD) silicon nitride is only one which can grow on alloying devices at low temperature.We study in this paper various deposition parameters affecting thin film properties.The conditions of depositing high quality silicon nitride passivation film are reported. A new explanation is given in this paper on index of refraction vs. velocity of growing. |
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| Keywords: | plasma silicon nitride deposition |
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