| 离子注入硅CWCO2激光退火的几个重要参数研究 |
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| 引用本文： | 黄信凡,鲍希茂.离子注入硅CWCO2激光退火的几个重要参数研究[J].南京大学学报(自然科学版),1990,26(2):204-210. |
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| 作者姓名： | 黄信凡 鲍希茂 |
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| 作者单位： | 南京大学物理系，南京大学物理系，南京大学物理系，南京大学物理系 |
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| 摘 要： |
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| 关 键 词： | 硅 离子注入 退火 激光 CO2 缺陷 |
STUDY OF TECHNOLOGICAL PARAMETERS OF CW CO_2 LASER ANNEALING FOR ION-IMPLANTED SILICON |
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| Huang Xinfan,Bao Ximao,Zhang Mei and Guo He.STUDY OF TECHNOLOGICAL PARAMETERS OF CW CO_2 LASER ANNEALING FOR ION-IMPLANTED SILICON[J].Journal of Nanjing University: Nat Sci Ed,1990,26(2):204-210. |
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| Authors: | Huang Xinfan Bao Ximao Zhang Mei and Guo He |
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| Institution: | Department of Physics |
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| Abstract: | Boron ion-implanted silicon at different doses is rapidly thermally anncaled using CW CO_2laser.Several damages and defects are induced in the surface of annealing samples under certain conditions. The effect of the implantation dose, the laser power and substrate temperature on the feature of silicon surface arc discussed. |
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| Keywords: | silicon ion-implantation CO_2laser annealing defect |
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