| 采用Q—V系统研究掺稀土ZnS薄膜电致发光 |
| |
| 引用本文： | 陈振湘,孙书农.采用Q—V系统研究掺稀土ZnS薄膜电致发光[J].厦门大学学报(自然科学版),1990,29(4):391-395. |
| |
| 作者姓名： | 陈振湘 孙书农 |
| |
| 作者单位： | 厦门大学物理学系
(陈振湘，孙书农)，厦门大学物理学系(刘瑞堂) |
| |
| 摘 要： | Q-V特性测试系统及亮度测试系统对ZnS:RE及ZnS:REF_3 器件进行传输电荷密度、器件阈值电压、器件各层电容、输入电功率密度及发光亮度等参数的测量,通过实验公式对各项参数定量计算,作出特性曲线,并对结果作了讨论。
|
| 关 键 词： | Q－V系统 稀土 薄膜 电致发光 ZnS |
Study of ZnS: RE Thin-film by Q-V System |
| |
| Chen ZhenXiang Sun Shunong Liu Ruilang Dept. of phys..Study of ZnS: RE Thin-film by Q-V System[J].Journal of Xiamen University(Natural Science),1990,29(4):391-395. |
| |
| Authors: | Chen ZhenXiang Sun Shunong Liu Ruilang Dept of phys |
| |
| Institution: | Chen ZhenXiang Sun Shunong Liu Ruilang Dept. of phys. |
| |
| Abstract: | The charge density-Voltage (a-V*) characteristic measuring system with Sawyer-Tower circuits can be used for measurement of the working parameters of the AC thin-film electroluminescent device Here we report the measurements of a series of parameters, such as the transferred-charge density, the threshold voltage of the device, the capacitance of each layer in the device, the input power density and the brightness, by using this system and the associated brightness measuring system for the ZnS;RE or ZnS:-REF3 ACTFEL device. The relevant calculations and characteristic curves are given. The relative effects are discussed. |
| |
| Keywords: | Charge density-voltage characteristic Thin-film electroluminescence Rare earth impurity |
| 本文献已被 CNKI 维普 等数据库收录！ |
