| 退火对硅锗薄膜上低维结构的PL光谱的影响 |
| |
| 引用本文： | 吴克跃,宋军,吴兴举.退火对硅锗薄膜上低维结构的PL光谱的影响[J].四川大学学报(自然科学版),2009,46(4):1043-1046. |
| |
| 作者姓名： | 吴克跃 宋军 吴兴举 |
| |
| 作者单位： | 皖西学院数理系,六安,237012 |
| |
| 基金项目： | 安徽省教育厅自然科学基金(KJ2008B269);皖西学院青年自然科学基金(WXZQ0706) |
| |
| 摘 要： | 采用激光辐照的方法在硅锗薄膜样品表面生成微米级小孔，用高精度扫描电镜观察孔内结构，发现片状的纳米结构. 用荧光光谱仪测其光致荧光谱，在705 nm处出现较强的光致荧光谱（PL）. 对片状结构在800 ℃下进行退火20 min后，其PL光谱明显蓝移至575 nm. 退火40 min后，在725 nm处有较宽的PL光谱，同时，在606 nm处有一尖锐的PL光谱. 利用量子受限和纳晶与氧化物的界面态综合模型解释PL光谱的产生.
|
| 关 键 词： | 硅锗合金 低维结构 光致荧光光谱 界面态 |
| 收稿时间： | 5/25/2008 2:23:02 PM |
| 修稿时间： | 6/14/2008 3:35:29 PM |
A study of annealing effect on the photoluminescence of the low-dimensional structures on the SiGe alloy |
| |
| WU Ke-Yue,SONG Jun and WU Xing-Ju.A study of annealing effect on the photoluminescence of the low-dimensional structures on the SiGe alloy[J].Journal of Sichuan University (Natural Science Edition),2009,46(4):1043-1046. |
| |
| Authors: | WU Ke-Yue SONG Jun and WU Xing-Ju |
| |
| Institution: | Department of Mathematical & Physics, West Anhui University;Department of Mathematical & Physics, West Anhui University;Department of Mathematical & Physics, West Anhui University |
| |
| Abstract: | A kind of germanium nanocrystals can be formed on the SiGe alloys by laser irradiation. Before annealing, the photoluminescence of the piece structures peaks at 705nm. The photoluminescence has a blue-shift to 575nm after annealing for 20min. A sharp peak at 606nm wavelength occurred after annealing for 40min and the peak at 575nm is red shift to 725nm. The quantum confinement model is fail of interpreting the above effect alone, so we propose a model of three-level system associated with the nanocrystal-oxide interface state. |
| |
| Keywords: | SiGe alloy low dimensional structure photoluminescence interface state |
| 本文献已被 万方数据 等数据库收录！ |
| 点击此处可从《四川大学学报(自然科学版)》浏览原始摘要信息 |
| 点击此处可从《四川大学学报(自然科学版)》下载免费的PDF全文 |
