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| 光子作用所形成的硅锗合金的多孔结构及其发光特性 | |
| 引用本文： | 吴克跃,黄伟其,刘世荣,秦朝建,蔡绍洪.光子作用所形成的硅锗合金的多孔结构及其发光特性[J].贵州科学,2007,25(2):13-16. |
| 作者姓名： | 吴克跃 黄伟其 刘世荣 秦朝建 蔡绍洪 |
| 作者单位： | 1. 贵州大学理学院光信息物理实验室,贵州,贵阳,550025 2. 贵州大学理学院光信息物理实验室,贵州,贵阳,550025;贵州教育学院物理系,贵州,贵阳,550003 3. 中国科学院地球化学研究所,贵州,贵阳,550003 |
| 摘 要： | 将功率为75W、波长为1 064nm的YAG激光的散焦束斑辐照在SiGe合金表面上能够形成多孔硅锗结构,其硅纳晶和锗纳晶的尺寸和形貌有自身的特点.用514nm激光激发,在600nm到900nm波长范围有较强的光致荧光.与化学刻蚀方式生成的多孔硅锗样品相比较,其荧光发光的频谱分布较复杂.当激光辐照到锗纳晶颗粒较多的地方,荧光发光谱分布延伸至红外区域.文中分析了发光的机理,检测出光致荧光的增强与氧化硅表面无关,主要来自硅纳晶和锗纳晶的表面态.指出了激光辐照方式加工样品的优点. |
| 关 键 词： | 激光辐照 多孔硅锗 光致荧光 |
| 文章编号： | 1003-6563（2007）02-0013-04 |
| 收稿时间： | 2006-10-30 |
| 修稿时间： | 2006-10-30 |
EMISSION PROPERTIES OF POROUS STRUCTURE ON SiGe FILM BY IRRADIATION OF LASER |
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| WU Ke-yue,HUANG Wei-qi,LIU Shi-rong,QIN Chao-jian,CAI Shao-hong.EMISSION PROPERTIES OF POROUS STRUCTURE ON SiGe FILM BY IRRADIATION OF LASER[J].Guizhou Science,2007,25(2):13-16. | |
| Authors: | WU Ke-yue HUANG Wei-qi LIU Shi-rong QIN Chao-jian CAI Shao-hong |
| Institution: | 1. Department of Physics, Guizhou University, Guiyang 550025, China;2. Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China; 3. Department of Physics, Guizhou Educational College, Guiyang 550003, China |
| Abstract: | A kind of porous structure was produced on SiGe film using laser with 75W power and 1064nm wavelength,and the porous structure can emit intense photoluminescence(PL).Under excitation of laser with 514nm wavelength,the range of the PL spectra is from 600nm to 900nm wavelength.And the rang extends to the infrared region when the excitation laser irradiates the Ge-rich partage of the sample.Some new models are found to explain the above phenomenon. |
| Keywords: | Laser irradiation porous SiG e photoluminescence |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |