| NH_3等离子体增强热处理形成硅化钛导电薄膜 |
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| 引用本文： | 李炳宗,厉佳,顾志光.NH_3等离子体增强热处理形成硅化钛导电薄膜[J].复旦学报(自然科学版),1988(1). |
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| 作者姓名： | 李炳宗 厉佳 顾志光 |
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| 作者单位： | 复旦大学电子工程系，复旦大学电子工程系，复旦大学电子工程系 一九八七届硕士研究生 |
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| 基金项目： | 国家自然科学基金，电子工业部科研基金 |
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| 摘 要： | 本文介绍制备均匀硅化钛导电薄膜的一种新方法,高频NH_3等离子体和感应加热的共同作用,使淀积在硅片表面的Ti膜产生氮化和硅化反应,实验表明,在低气压下NH_3等离子体增强的Ti膜表面氮化,可以有效地克服通常很难避免的氧沾污的有害影响,有利于通过固相反应形成自对准TiSi_2导电薄膜。
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| 关 键 词： | TiSi_2 薄膜 固相反应 NH 等离子体 氮化。 |
TITANIUM SILICIDE THIN FILM FORMATION BY NH_3 PLASMA ASISTED THERMAL ANNEALING |
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| Li Bingzong,Li Jia,Gu Zhiguang,.TITANIUM SILICIDE THIN FILM FORMATION BY NH_3 PLASMA ASISTED THERMAL ANNEALING[J].Journal of Fudan University(Natural Science),1988(1). |
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| Authors: | Li Bingzong Li Jia Gu Zhiguang |
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| Institution: | Department of Electronic Engineering |
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| Abstract: | A new method for formation of uniform TiSi_2 thin film is described. Under thesimultaneous action of RF NH_3 plasma and induction heating both nitridation andsilicidation are taken place at the Ti film deposited on top of Si wafer. Experimentalresults show the enhanced surface nitridation of titanium by NH_3 plasma is aneffective way to suppress the harmful effect of oxygen contamination and to obtain aself-aligned TiSi_2 thin film for microelectronics process application. |
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| Keywords: | TiSi_2 thin film solid phase reaction NH_2 plasma nitridation |
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