英语B级成绩的影响因素研究

以英语B级考试117名大专学生为研究对象,采用描述统计、t检验、相关分析和回归分析,探讨高考英语成绩和学习者的情感因素对B级成绩的影响。结果表明：（1）学生在考试之前,外语自我效能感处于一个中等水平,英语考试焦虑和计算机使用焦虑水平较高;（2）B级考试及格学生和不及格学生的高考英语成绩和英语考试焦虑存在显著差异;（3）B级考试成绩和高考英语成绩、自我效能感显著正相关,与英语考试焦虑成显著负相关,与计算机使用焦虑的相关性不显著;（4）高考英语成绩和英语考试焦虑为B级考试成绩的显著预测变量。     

合成气制甲醇铜基催化剂CuO/ZnO/KIT-6的制备与表征

以KIT-6为载体,采用浸渍法制备了新型的CuO/ZnO/KIT-6催化剂,通过TEM、XRD、N2-吸附脱附等方法对催化剂的结构形貌进行了表征,探究了活性组分CuO/ZnO在KIT-6载体上的分散状态。在此基础上,考察了CuO/ZnO/KIT-6催化剂在合成气制甲醇反应中的催化活性和热稳定性。研究发现,KIT-6载体具有立方Ia3d孔结构以及开放有序的孔道,可在一定程度上抑制活性组分粒子的生长,从而使活性组分CuO/ZnO在载体的表面和孔道中均匀分散,且晶粒尺寸较小。催化性能结果表明,与常规SiO2颗粒载体相比,以介孔KIT-6为载体的催化剂显示出更高的催化活性。此外,CuO/ZnO/KIT-6表现出较好的热稳定性。这是由于CuO/ZnO活性组分以极小的尺寸高度分散在了KIT-6载体的表面和孔道中,有效改善了传统CuO/ZnO/Al2O3催化剂活性组分在高温下容易发生烧结的现状,提高了催化剂的稳定性。     

微波辐射作用对纳米复合材料Ag/ZnO的形貌与多模式光催化活性的改变

在微波辐射功率150 W下,通过沉淀法制备了纳米复合材料Ag/ZnO。并通过X-射线衍射(XRD)、紫外-可见漫反射吸收(UV-Vis/DRS)、X射线光电子能谱(XPS)、扫描电镜(SEM)和N2吸附-脱附测定等测试手段对其组成、结构和形貌等进行了表征。结果显示,经功率为150 W的微波辐射处理后,样品的ZnO纤锌矿和Ag立方晶相结构未发生明显变化,但同时,其晶粒尺寸、形貌以及颗粒分布等方面则有较大改变。其中,经150 W微波辐射的样品更多呈现三角形或四边形纳米片堆叠,且大部分粒子呈紧密堆积结构。通过紫外、微波辅助、模拟日光等光催化实验分别考察了该复合材料对罗丹明B的光降解活性,结果显示,在紫外光催化降解罗丹明B的实验研究中,Ag/ZnO表现出了较好的光催化性能,其活性明显高于P25以及沉淀法ZnO等单体催化剂。并且,在模拟日光、微波辐射作用下,该复合材料也具有良好的降解效果。     

基于SSH2的企业员工考勤系统的设计与实现

针对目前企业员工考勤系统普遍存在的可移植性差、后续维护困难、灵活性不高等问题,在SSH2开源框架基础上,设计并实现了一套员工考勤管理系统。该系统实现了表现层、业务层和数据库层的分离,降低了模块的耦合度,提高了代码的复用性;同时运用JSP技术、Ajax技术和JNDI技术规范了系统的标准和柔性。实践证明,该系统具有开发效率高、扩展性强、维护性好等特点,有良好的应用效果。     

Q345B钢结构厂房焊接工艺研究

根据福建某企业Q345B钢结构厂房建设实际,分别使用CO2气体保护焊和焊条电弧焊两种焊接方法对厚度20 mm的Q345B钢板进行焊接,对焊接接头进行外观及无损探伤检测,并系统研究焊接试样的力学性能和组织结构。结果表明：焊条电弧焊和CO2气体保护焊工艺均能够用于Q345B钢结构厂房的焊接,焊接质量均能达到国家标准,但CO2气体保护焊接头的抗拉强度和伸长率均高于焊条电弧焊接头,且显微硬度分布更均匀;焊接方法对焊接接头各区域的组织构成影响不大,但焊条电弧焊接头各区域的晶粒尺寸均大于CO2气体保护焊接头;采用16 KJ·cm^-1热输入的CO2气体保护焊接头具有最优的综合力学性能,且焊缝组织最为均匀,推荐企业优先选用此种焊接工艺。     

ZnO的p型掺杂研究进展

ZnO是一种宽带隙Ⅱ~Ⅵ族半导体材料,由于其独特的性能,如高电子迁移率、广泛的激子结合能,是一种很有前途的光电器件材料;但因本征施主缺陷和施主杂质引起的自补偿效应等很难使其有效地实现n型向p型导电的转变.介绍了ZnO的p型掺杂机理、掺杂元素分类及国内外对p型ZnO研究的最新进展.     

人凝血因子Ⅸ的线性B细胞表位预测及鉴定

为预测并鉴定人凝血因子IX(FIX)的线性B细胞表位.通过IEDB数据库及Discovery Studio软件预测FIX的B表位和白喉毒素T结构域(DTT)的B表位,用所预测的FIX的B表位替换某预测的DTT的B表位形成DTT-表位融合蛋白.通过基因工程技术制备各重组蛋白,并免疫小鼠,通过ELISA和Western-blot检测抗血清效价和特异性,通过等温量热滴定技术(ITC)测定抗体的亲和力.预测到4个FIX的B表位.用重组蛋白FIX-2-DTT免疫的小鼠产生了识别完整FIX的抗体,该抗体具有良好的特异性,其结合常数KD为106 M-1.表明FIX-2(306 NAAINKY312)是FIX的B表位,用重组蛋白FIX-2-DTT免疫小鼠能够产生特异性识别FIX且亲和力温和的抗体.     

3+1维Burgers方程的Painlevé性质和Bcklund变换及严格解

3+1维的Burgers方程是物理学的重要方程之一.利用奇性分析方法证明了3+1维Burgers方程的Painlevé性质;然后,利用截断的Painlevé展开给出了3+1维Burgers方程的Bcklund变换;最后,由简单的特解出发,利用贝克隆变换得到了3+1维Burgers方程的大量新解.     

The nonleptonic two body B decays involving a light tensor meson in final states

The nonleptonic two body Bu,d,s,c decays involving a light tensor meson in final states are studied in the perturbative QCD approach based on kT factorization. The decay modes with a tensor meson emitted, are prohibited in naive factorization, since the emission diagram with a tensor meson produced from vacuum is vanished. While contributions from the so-called hard scattering emission diagrams and annihilation type diagrams are important and calculable in the perturbative QCD approach. The branching ratios of most decays are in the range of 10-4-10-8, which are bigger by 1 or 2 orders of magnitude than the predictions given by the naive factor- ization, but consistent with the predictions from the QCD factorization and the recent experimental measurements. We also give the predictions for the direct CP asymmetries, some of which are large enough for the future experiments to measure. We also find that, even with a small mixing angle, the mixing between f2 and f′2 can bring remarkable changes to both branching ratios and the direct CP asymmetries for some decays involving f2（′） mesons. For decays with a vector meson and a tensor meson in final states, we predict a large percentage of transverse polarization contributions due to the contributions of the orbital angular momentum of the tensor mesons.     

Research progress in ZnO single-crystal: growth,scientific understanding,and device applications

Zinc oxide, a wide band-gap semiconductor, has shown extensive potential applications in high-efficiency semiconductor photoelectronic devices, semiconductor photocatalysis, and diluted magnetic semiconductors. Due to the undisputed lattice integrity, ZnO single crystals are essential for the fabrication of high-quality ZnO-based photoelectronic devices, and also believed to be ideal research subjects for understanding the underlying mechanisms of semiconductor photocatalysis and diluted magnetic semiconductors. This review, which is organized in two main parts, introduces the recent progress in growth, basic characterization, and device development of ZnO single crystals, and some related works in our group. The first part begins from the growth of ZnO single crystal, and summarizes the fundamental and applied investigations based on ZnO single crystals. These works are composed of the fabrication of homoepitaxial ZnO-based photoelectronic devices, the research on the photocatalysis mechanism, and dilute magnetic mechanism. The second part describes the fabrication of highly thermostable n-type ZnO with high mobility and high electron concentration through intentional doping. More importantly, in this part, a conceptual approach for fabricating highly thermostable p-type ZnO materials with high mobility through an integrated three-step treatment is proposed on the basis of the preliminary research.