多晶硅与单晶硅的扩散比较

相同工艺下多晶硅和单晶硅的扩散结果区别非常明显，在扩散温度较低时，多晶硅扩散后的方块电阻大于相同条件下的扩散单晶硅；在扩散温度较高时，多晶硅扩散后的方块电阻小于单晶硅，文章从多晶硅的结构特点对此现象进行了解释。     

多热源合成SiC传热规律

对多热源合成SiC冶炼炉的温度场进行了数值模拟,研究了冶炼炉内的温度分布、热流强度以及温度梯度的动态变化规律,揭示了多热源合成SiC的传热传质规律.研究表明,由于多热源之间的屏蔽作用与热能叠加作用,导致多热源合成SiC技术比Acheson单热源炉的单炉产量提高48.1%,特、一级品率提高30%,节能10%以上,并且杜绝了单热源生产中频繁喷炉事故,使生产更安全.     

水平排列硅光二极管色传感器及其特性

简要介绍水平排列硅光二极管色传感器的制作工艺，该器件波长在５００ｎｍ到６５０ｎｍ范围内有一个单调的近于线性的光谱响应。入射光波长为６００ｎｍ时，入射光强度化五个数量级，测出的波长基本不变，器件波长分辨率、最低入射光强、长时间测量的波长漂移以及波长温漂系数等特性的测量结果表明：该类色传感器已达高性能实用要求。     

真空磁控溅射高压稳流源的研制

本文介绍了真空磁控溅射镀膜设备中必不可少的溅射稳流电源的研制．经过半年来的连续运行，证明性能稳定可靠     

化学成分对TEMF法快速测定高炉生铁中硅含量的影响

利用TEMF法（即热电动势法）测硅仪，测定了C，S，P和Mn元素等含量不同的高炉生铁样品的热电动势，研究了热电动势的变化，得出C，S，P的影响可忽略，Mn稍有影响的结论。     

非单晶硅基薄膜光致发光特性的研究

非单晶硅氢基薄膜材料，经高温退火及高温氧化可制备纳米尺寸的晶粒，室温下发出可见光。发光强度强烈依赖于晶粒大小和结晶体在网络中的体积比。发光来源于量子尺寸效应和表面发光中心。     

Preparation and Properties of Polyaniline Composite Films

ＩｎｔｒｏｄｕｃｔｉｏｎＰｏｌｙａｎｉｌｉｎｅ (ＰＡｎ) ,ｏｎｅｍｅｍｂｅｒｏｆｉｎｔｒｉｎｓｉｃａｌｌｙｃｏｎｄｕｃｔｉｎｇｐｏｌｙｍｅｒｓ (ＩＣＰｓ) ,ｈａｓｂｅｅｎｒａｐｉｄｌｙａｄｖａｎｃｅｄｉｎｒｅｃｅｎｔｙｅａｒｓｓｉｎｃｅｉｔｗａｓｒｅｓｅａｒｃｈｅｄｂｙＭａｃＤｉａｒｍｉｄｉｎ 1984[1] ｂｅｃａｕｓｅｏｆｉｔｓｐｏｔｅｎｔｉａｌａｐｐｌｉｃａｔｉｏｎｉｎｌｉｇｈｔ ｅｍｉｔｔｉｎｇｄｉｏｄｅｓ ,ｂａｔｔｅｒｉｅｓ ,ｅｌｅｃｔｒｏｍａｇｎｅｔｉｃｓｈｉｅｌｄｉｎｇ ,ａｎｔｉ ｓｔａｔｉ…     

Photoinduced effects in amorphous semiconductor Ge(S, Se)2 chalcogenide films

The blue shift of optical transmittance edges were observed in amorphous semiconductor Ge(S, Se)₂ chalcogenide films with light illumination. The shift in well-annealed films could be recovered by annealing the films near the glass-transition temperature again. The photocrystallization was also observed in amorphous Ge(S,Se)₂ films with light illumination by the transmitting electron microscope measurement. The photoinduced phenomina of the amorphous Ge(S,Se)₂ films could be applied to designing some new kinds of optical storage materials.     

Complex fitting 3D closed-form Green's function and its application for silicon RF IC's

An approximate three-dimensional closed-form Green's function with the type of exponential function is derived over a lossy multilayered substrate by means of the Fourier transforms and a novel complex fitting approach. This Green's function is used to extract the capacitance matrix for an arbitrary three-dimensional arrangement of conductors located anywhere in the silicon IC substrate. Using this technique, the substrate loss in silicon integrated circuits can be analyzed. An example of inductor modeling is presented to show that the technique is quite effective.