A STUDY OF THE IMPOVEMENT OF TENACITY OF POLYACRYLONITRILE PREOXIDED FIBRE BY USING CUPROUS SALT

Polyacrylonitrile preoxided fibre PANOF is an intermediate in carbon fibre preparation. Thequality of PANOF is closely related to the property and structure of carbon fibre. In this paper, thermal mechanical analysis(TMA), thermogravimetric analysis(TGA), swell-ing differential scanning calorimetry(SDSC)and X-ray photoelectron spectroscopy(XPS)wereused to study the increase in tenacity of PANOF from the precursor treated with cuprous salt It has been discovered that the cuprous salt reacts strongly with the uncyclized CN of PANOF,resulting in an increase in the tenacity of PANOF by 30%. The results shwo that the cause of thistenacity improvement is the formation of coordinated complex. Cu~+is the central ion, and PANOFthe ligand. It is due to the coordinate bond that the network structure is formed from uncyclizedCN of PANOF. Therefore the tenacity of PANOF is remarkably increased.     

铜盐对聚丙烯腈预氧化纤维增强作用的研究

聚丙烯腈预氧化纤维(以下简称PANOF)是碳纤维生产过程中的中间产品,其性能的好坏与最终产品碳纤维的优劣密切相关。本文采用热机械分折(TMA)、热失重分折(TGA)、溶胀差示扫描量热分折(SDSC)、X光电子能谱分折(XPS)等实验方法研究了铜盐对PANOF的增强作用。发现Cu~+与PANOF中未环化的氰基有着强烈的相互作用。经铜盐处理后所制得的PANOF,其强度可增加30％。研究结果表明,PANOF得以增强的原因是由于发生了以Cu~+为中心离子,PANOF作为配位体的络合作用。络合配位键的生成使未环化的氰基得以交联,交联网络的形成使PANOF的强度明显提高。     

对向靶溅射法中直流负偏压对FeN化合物薄膜的结构和磁性的影响

对向靶反应溅射法制备的FeN化合物薄膜的结构和磁性对基板偏压的变化很敏感,不同的偏压数值作用的效果不同。我们用基板偏压促进成膜原子间的相互扩散,以及对负离子排斥降低膜中N的浓度和粒子轰击对膜再溅射的观点解释了FeN膜的结构和磁性的变化。     

受磁场作用的量子阱激子

本文试用两种方法计算ＧａＡｓ／Ｇａ１－ｘＡｌｘＡｓ复合量子阱中激子结合能增量与磁场的关系，计算结果与实验相符。     

稀土单硫代二苯甲酰甲烷配合物的XPS研究

测定并研究了单硫代二苯甲酰甲烷（ＨＴＤＢＭ）及其稀土配合物Ｌｎ（ＴＤＢＭ）４［（Ｃ２Ｈ５）２ＮＨ］Ｈ（Ｌｎ＝除Ｃｅ、Ｔｍ外的Ｌａ－Ｌｕ）的光电子能谱（ＸＰＳ）。结果表明：Ｌｎ３＋离子通过Ｏ原子和Ｓ原子配位形成螫合物，Ｌｎ—Ｏ键和Ｌｎ—Ｓ键均具有一定程度的共价性；从Ｌａ到Ｌｕ，配位键的离子性逐渐增强；观察到Ｌａ３＋配合物３ｄ５／２具有伴峰现象。     

多重圈张量乘积的联结数

本文给出了多重圈张量乘积的联结数的计算公式,并给出了证明。     

GaN/Al_xGa_(1-x)N量子点中类氢杂质位置对激子态的影响

利用有效质量方法和变分原理,考虑内建电场效应和量子点(QD)的三维约束效应,研究类氢杂质对GaN/AlxGa1-xN量子点中激子态的影响.结果表明:量子点中心的类氢杂质使激子的结合能升高,基态能降低,QD系统的稳定性增强,发光波长红移.杂质位于量子点上界面时,激子的基态能最小,结合能最大,系统最稳定.随着杂质从量子点的上界面沿着Z轴移至下界面,激子基态能增大,结合能减小,带间发光蓝移.     

Rare earth effect of yttrium on formation and property of Cr_2O_3 oxide film formed on Co-Cr binary alloy

The isothermal oxidizing kinetics of Co-40Cr alloy and its yttrium ion-implanted samples were studied at 1000 ℃ in air by thermal-gravity analysis (TGA). Scanning electronic microscopy (SEM) was used to examine the Cr2O3 oxide film's morphology after oxidation. Secondary ion mass spectrum (SIMS) method was used to examine the binding energy change of chromium caused by Y-doping and its influence on formation of Cr2O3 film. Acoustic emission (AE) method was used in situ to monitor the cracking and spalling of oxide films formed on both samples during oxidizing and subsequent air-cooling stages. Theoretical model simulating the film fracture process was proposed to analyze the acoustic emission spectrum both on time domain and on AE-event number domain. It is found that yttrium ion-implantation can remarkably reduce the isothermal oxidizing rate of Co-40Cr and improve the anti-cracking and anti-spalling properties of Cr2O3 oxide film. Reasons for the improvement are mainly that the implanted yttrium can reduce the grain size of Cr2O3 oxide, increase the high temperature plasticity of oxide film, and remarkably reduce the number and size of Cr2O3/Co-40Cr interfacial defects.     

Ⅲ族氮化物量子点中类氢施主杂质位置对束缚激子结合能的影响

在有效质量近似下，运用变分方法，考虑内建电场效应和量子点（QD）的三维约束效应的情况下，研究了类氢施主杂质在量子点中的位置对Ⅲ族氮化物量子点中束缚激子结合能的影响。结果表明：当类氢施主杂质位于量子点中心时，对于InxGa1-xN／GaN量子点，量子点高度和In含量存在临界值，当参数大于临界值时，约束在QD中束缚激子的结合能升高，激子态的稳定性增强，提高了激子的离解温度，使人们能在较高的温度条件下观察到半导体量子点吸收谱中的激子峰。而类氢施主杂质总是使束缚在GaN／AlxGa1-xN量子点中激子的结合能升高，载流子被更强的约束在量子点中。说明对GaN／AlxGa1-xN量子点，杂质使人们能在更高温度下观察到量子点中的激子。类氢施主杂质位于量子点上界面时，束缚激子的结合能最大，系统最稳定；随着施主杂质下移，激子结合能减小，激子的离解温度下降。