工艺条件对电积法制备铜粉的影响

采用不溶阳极电积法制备铜粉,研究了Cu2+质量浓度、硫酸质量浓度、电流密度、电解液温度和刮粉周期对电积过程和铜粉中位粒径的影响.结果表明:优化工艺为Cu2+质量浓度15 g.L-1、硫酸质量浓度140 g.L-1条件下,控制电流密度为1 800 A.m-2、温度为35℃、刮粉周期为30min、循环流量为14 L.h-1以及极距为4.5 cm,可得到高品质的铜粉,其粒度呈正态分布,微观形貌呈树枝状;增加铜离子质量浓度、硫酸质量浓度和电解液温度有利于降低槽电压;增加Cu2+质量浓度、电解液温度和刮粉周期有利于提高电流效率;大电流密度、高硫酸质量浓度和低Cu2+质量浓度有利于得到粉末粒度小的铜粉.     

Influence of deposition time on the morphology and optical properties of SiO<Subscript>2</Subscript>-ZnO composite photonic crystals

SiO2 photonic crystal were successfully prepared by vertical deposition and then used as a template to fabricate SiO2-ZnO composite photonic crystals on ITO substrates by electrodeposition and subsequent calcination. A number of different deposition times were used. The morphologies of the silica opals and SiO2-ZnO composite photonic crystals were investigated by scanning electron microscopy. It was found that ZnO particles grew randomly on the surfaces of the silica spheres when the deposition time was short. As the deposition time was increased, the ZnO particles grew evenly on the surfaces of the silica spheres so that the interstitial space of the silica template was filled with ZnO particles. Reflectance spectra of the SiO2-ZnO composite crystals revealed that all of the fabricated photonic crystals exhibit a photonic band gap in the normal direction.     

Electrodeposition of Ni micro/nano-structures

A quasi two-dimension electrodeposition method was used to prepare materials with arborized, tree-shaped, and membrane patterned micro/nano-structures. The morphology of the membrane patterned micro/nano-structure was characterized using scanning electron microscopy, and a mechanism for the morphology formation was suggested. The novel preparation method used in this study, which is proprietary to our research group, does not require a template and so has many advantages including controllable, low cost, large scale preparation. The electrolyte concentration and electrodeposition voltage had a significant effect on the resulting morphology.     

脉冲电沉积法制备Pd-Pt合金纳米线及吸氢性能的研究

氢气易燃易爆,在工业生产中,快速、准确地对其进行检测是非常必要的.采用AAO模板法制备Pd-Pt合金纳米线,电化学沉积溶液的配制如下:60 mmol/L的PdCl2+40 mmol/L的H2PtCl6·6H2O+0.2 mol/L的H3BO3,pH值为5.9.实验参数选择设置为-0.4V(1s),0 V(3 s),沉积...     

脉冲频率对铌表面熔盐电沉积渗硅的影响

采用熔盐脉冲电沉积法在纯铌表面制备出渗硅层。研究了脉冲频率对渗硅层沉积速率、成分、厚度、组织及相结构的影响,同时考察了渗硅层的高温抗氧化性。结果表明,频率对渗硅层成分无影响。随频率增大,渗硅层厚度和沉积速率均减小。频率由500 Hz增大到1 000 Hz时,渗硅层晶粒变得细小致密;超过1 000 Hz后,晶粒则变得粗大。渗硅层相结构不受频率影响,均由单相NbSi₂组成,并在(110)和(200)晶面上具有择优取向。NbSi₂渗层的存在使得纯铌的高温抗氧化性能得以提高。     

电结晶成核—生长模型的三角波电位扫描响应

本文用半球形模型,考虑了晶核间的重叠,推导出了界面动力学控制下的成核—生长过程的三角波电位扫描的伏安响应。取理想的成核适度和生长速度表达式并设计了计算机程序得出数值解。这些数据表明在阳极反向扫描过程中有电流最大值出现。     

添加剂对Zn—Ni异常共沉积的作用

应用极化曲线、微分电容曲线、微分脉冲极谱、阳极溶出伏安曲线和x-射线衍射等方法研究组合添加剂XZN-2对Zn-Ni异常共沉积的作用,结果表明,XZN-2使Zn-Ni共沉积表现更加异常,且改变Zn-Ni合金镀层的晶体结构和相组成,实验还发现XZN-2在汞电极上于-0.18～-1.83V的电位内表现较强的吸附性,吸附膜对Zn~(2+)和Ni~(2+)离子放电的阳化作用有明显差异,讨论了XZN-2的阳化作用机理及导致Zn-N共沉积表现更加异常的原因。     

CdS纳米半导体薄膜的制备和表征及光电性能

以不同摩尔比的氯化镉与硫代乙酰胺混合溶液为电解液,应用电沉积技术,在表面活性剂与电解液的液/液界面之间制备CdS纳米薄膜。采用SEM、XRD及XPS等方法对纳米膜的表面形貌及物相、组成进行了表征。紫外-可见吸收光谱分析表明:CdS纳米膜在可见光范围内有良好的透过率,适合做太阳光谱的响应器件。荧光光谱测试表明:当用320nm的光激发时,在373nm和536nm出现两个发射峰。在光照条件下,此纳米膜电极能够产生阳极光电流,说明光生电流主要靠空穴导电。     

巨磁阻效应及恒流电镀制备具有巨磁阻效应的CuNiCo/Cu多层膜

本文叙述金属与合金的各向导性的磁电阻效应，磁性金属／金属多层膜的巨磁阻效应。恒流电镀制备巨磁阻金属多层膜以及巨磁阻金属多层膜应用。在室温条件下，用含有Co2＋、Ni2＋、Cu2＋离子的化合物作电解质，恒流电镀。具有巨磁阻效应的Cu－Co－Ni／Cu多层膜生长在抛光的铜基质上，在室温条件下，磁场强度为0～1T，测得电磁阻变化率达到2．45％。     

电化学自组装法制备透明ZnO薄膜及性能研究

以低浓度的Zn(NO3)2为电解液、KCl为支持电解质,采用电沉积自组装法在氧化铟锡(ITO)玻璃基片上成功制备了尺寸可控、性能优异、具有强的C轴择优取向生长的纳米柱ZnO薄膜;并进一步获得了六方晶体纳米结构的ZnO薄膜的优化沉积工艺.同时,结合X射线衍射(XRD)、扫描电镜测试(SEM)、透射电镜(TEM)、紫外吸收光谱(UV-vis)等测试手段对薄膜的形貌、晶形及光学性能进行了系统表征.结果表明,制备的ZnO薄膜为六方纤锌矿结构,且沿[002]方向的择优生长趋势明显、物相纯正;该薄膜的透射率最大值可达75%,禁带宽度接近于3.28 eV.