SiO2/ZnO 三维光子晶体的制备及光学性质

采用垂直沉积法制备了三维SiO2光子晶体模板。以醋酸锌为前躯体,成功制备了SiO2/ZnO三维复合光子晶体。扫描电子显微镜测试结果表明SiO2和SiO2/ZnO光子晶体均为面心立方结构排列。光学测试表明SiO2和SiO2/ZnO周期性阵列均在[111]方向出现了光子带隙。当具有较高折射率的ZnO材料包覆后,SiO2/ZnO 光子晶体[111]方向光子带隙的中心波长发生红移,光子晶体基元材料的有效折射率有所增加。同时,光子晶体的光学性质与样品内部的缺陷态密度密切相关。     

Preparation of modified SiO2 colloidal spheres with succinic acid and the assembly of colloidal crystals

SiO2 colloidal spheres were synthesized by St-ber method. In order to enhance surface charge of the SiO2 spheres, they were modified with succinic acid. Scanning electron microscope (SEM) shows that the average size of modified SiO2 spheres is 473 nm, and its distribution standard deviation is less than 5%; Fourier-transform infrared spectra (FT-IR) and X-ray photoelectron spectrometer (XPS) results indicate that one end of succinic acid is chemically bonded to the SiO2 spheres through esterification; Zeta potential of the modified SiO2 spheres in water solution is improved from -53.72 to -67.46 mV, and surface charge density of the modified SiO2 spheres is enhanced from 0.19 to 0.94 μC/cm2. SiO2 colloidal crystal was fabricated from aqueous colloidal solution by the vertical deposition method at 40℃ and 60% relative humidity. SEM images show that the sample of SiO2 colloidal crystal is face-centered cubic (fcc) structure with its (111) planes parallel to the substrate. Transmission measurement shows the existence of photonic band gap at 1047 nm.     

反蛋白石结构硫化锑光子晶体的制备

用改进St ber法制备出单分散的SiO2胶球.通过离心沉降法将SiO2胶球有序排列,得到蛋白石结构的SiO2光子晶体,该方法可制备出较大尺寸的蛋白石结构光子晶体.以得到的SiO2光子晶体为模板,通过化学反应向模板间隙填入Sb2S3后再经氢氟酸腐蚀去除二氧化硅胶晶模板,制备出反蛋白石结构硫化锑光子晶体.     

SiO2/PSt 纳 米 复 合 微 球 的 制 备

用Stober方法合成了SiO₂/PSt纳米微球, 并对其进行表面改性. 以SiO₂纳米微球为核, 采用乳液聚合法, 合成了SiO₂/PSt纳米复合微球. 该复合微球粒径均匀、 单分散性好. 通过控制反应条件, 可以合成不同大小的复合微球. 对两种微球的形貌、 尺寸、 所携带官能团及表面元素变化情况进行了表征, 讨论了SiO₂纳米微球用量、 乳化剂用量与反应介质配比等因素对SiO₂/PSt纳米复合微球粒径的影响.     

Immobilization of 12-phosphotungstic heteropolyacid on amine-functionalized SiO<Subscript>2</Subscript> for tetrahydrofuran polymerization

The 12-phosphotungstic heteropolyacid (HPW) was immobilized on the surface of a silica carrier modified by the amine groups of organosilane γ-aminopropyl triethoxysilane (APTES), and its catalytic performance was investigated for tetrahydrofuran (THF) ring-opening polymerization. This amine-functionalized catalyst exhibited better activity, and the polytetramethylene ether glycol (PTMG) yield was 63.7%. The 12-phosphotungstic heteropolyacid supported on aminopropyl-functionalized SiO₂ support (HPW/SiO₂-APTES) was reused four times and showed a good maintenance of activity which was better than that of the conven-tional catalyst HPW supported on SiO₂ (HPW/SiO₂). These results were obtained using infrared spectroscopy, nuclear magnetic resonance spectroscopy, nitrogen adsorption and X-ray diffraction. HPW on the HPW/SiO₂-APTES catalyst exhibited higher dispersed state and maintained a more stable structure than that of the HPW/SiO₂ sample.     

ZnO microsheet modified TiO<Subscript>2</Subscript> nanoparticle composite films for dye-sensitized solar cells

Randomly oriented ZnO microsheets were successfully self-assembled on TiO₂ nanoparticle (TN) film to act as the scattering layer via a cathodic electrodeposition process. The light scattering properties of ZnO microsheets were studied by UV-Vis spectrometer in the 400–800 nm wavelength range. It was found that ZnO microsheets exhibited excellent ability to scatter the incident light for ZnO microsheet-TiO₂ nanoparticle (ZT) composite films. The results showed that dye-sensitized solar cells (DSSCs) fabricated with ZT composite films showed higher short-circuit density (J_sc) and conversion efficiency than TN-based DSSCs, due to the light scattering properties of ZnO microsheets.     

Preparation of SiO<Subscript>2</Subscript> microspheres with sodium ions and self-assembly of photonic crystals

SiO2 microspheres were prepared via a novel co-precipitation process.The Na + ions were introduced by adding sodium chloride and metal sodium in solution systems for improving surface charge of the SiO2 microspheres.And then SiO2 photonic crystals were fabricated by the vertical deposition method.The electrical properties,micromorphology and optical properties were characterized by zeta potential instrument,scanning electron microscope (SEM) with energy dispersive X-ray spectroscopy and Uv-Vis-Nir spectroph...     

Preparation of Cu-SiO<Subscript>2</Subscript> composite aerogel by ambient drying and the influence of synthesizing conditions on the structure of the aerogel

A copper-doped silica composite aerogel with high specific surface area was prepared using a sol-gel method at ambient pressure. A drying control chemical additive (DCCA) N,N-dimethylformamide (DMF) was introduced to the composite sol of tetraethyl orthosilicate (TEOS) and copper nitrate (Cu(NO3)2·3H2O) during the synthesizing process. The influence of the preparation conditions including Cu loading, catalyst concentration and heat treatment on the structure of copper-doped silica was investigated. The results showed that the obtained aerogel particles were uniformly distributed. The pore diameter was in a range of 2 to 15 nm. Heavier Cu loading benefited the formation of CuO crystalline, and reduced the specific surface area and pore diameter. When the catalyst concentration was high, the aggregation of Si-O network was reduced with the increase of it. The composite aerogel exhibited a good thermal stability after the heat treatment at high temperature.     

Effect of SiO<Subscript>2</Subscript> addition on the microstructure and electrical properties of ZnO-based varistors

The microstructure and electrical properties of ZnO-based varistors with the SiO₂ content in the range of 0–1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectrometry, inductively coupled plasma-atomic emission spectrometry, and X-ray photoelectron spectroscopy. The results indicate that the average grain size of ZnO decreases with the SiO₂ content increasing. A new second phase (Zn₂SiO₄) and a glass phase (Bi₂SiO₅) are found. Element Si mainly exists in the grain boundary and plays an important role in controlling the Bi₂O₃ vaporization. The electric measurement shows that the incorporation of SiO₂ can significantly improve the nonlinear properties of ZnO-based varistors, and the nonlinear coefficients of the varistors with SiO₂ are in the range of 36.8–69.5. The varistor voltage reaches the maximum value of 463 V/mm and the leakage current reaches the minimum value of 0.11 μA at the SiO₂ content of 0.75mol%.     

水热法制备TiO2-ZnO纳米棒分级结构及其光电性能研究

为了增加光电极光生电子传输通道并提高其光敏剂的负载能力,采用两步水热法制备了一种新颖的TiO_2-ZnO纳米棒分级结构。采用水热法在FTO导电玻璃基底上生长TiO_2纳米棒有序阵列膜,通过浸泡提拉在TiO_2纳米棒上包覆一层ZnO溶胶,经烧结形成ZnO种子层;再次采用水热法于TiO_2纳米棒上生长ZnO纳米棒,形成TiO_2-ZnO纳米棒分级结构,通过旋涂辅助连续离子反应分别在TiO_2纳米棒阵列和TiO_2-ZnO纳米棒分级结构中沉积光敏剂CdS纳米晶,形成CdS/TiO_2纳米棒复合膜和CdS/TiO_2-ZnO纳米分级结构复合膜。利用SEM,TEM,XRD、紫外-可见吸收光谱、瞬态光电流图谱等表征和测试手段,对样品的形貌、结构、光吸收和光电性能进行了表征和测试。结果表明,与单纯的TiO_2纳米棒阵列相比,TiO_2-ZnO分级结构可以沉积更多的CdS光敏剂,CdS/TiO_2-ZnO纳米分级结构复合膜的光吸收性能和瞬态光电流均明显优于CdS/TiO_2纳米复合薄膜。凭借优异的光电性能,TiO_2-ZnO分级结构在太阳电池光阳极材料中具有很好的应用前景。     

Preparation and radar-absorbing properties of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/TiO<Subscript>2</Subscript>/Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>/Yb<Subscript>2</Subscript>O<Subscript>3</Subscript> composite powder

Al₂O₃/TiO₂/Fe₂O₃/Yb₂O₃ composite powder was synthesized via the sol-gel method. The structure, morphology, and radar-absorption properties of the composite powder were characterized by transmission electron microscopy, X-ray diffraction analysis and RF impedance analysis. The results show that two types of particles exist in the composite powder. One is irregular flakes (100-200 nm) and the other is spherical Al₂O₃ particles (smaller than 80 nm). Electromagnetic wave attenuation is mostly achieved by dielectric loss. The maximum value of the dissipation factor reaches 0.76 (at 15.68 GHz) in the frequency range of 2-18 GHz. The electromagnetic absorption of waves covers 2-18 GHz with the matching thicknesses of 1.5-4.5 mm. The absorption peak shifts to the lower-frequency area with increasing matching thickness. The effective absorption band covers the frequency range of 2.16-9.76 GHz, and the maximum absorption peak reaches -20.18 dB with a matching thickness of 3.5 mm at a frequency of 3.52 GHz.     

Silica photonic crystals with quasi-full band gap in the visible region prepared in ethanol

Monodisperse silica spheres of 252 nm with a standard deviation of 5.7% are prepared by Stber method. By compari-son of both of media, ethanol instead of water is used to assemble opal, and the artiflcial opal has been prepared by the sedimentation inethanol of silica spheres. The structure of the opal prepared has been examined and discussed. The results show that the artificial opal hasa structure similar to the face-centered cubic (fcc) type packed system with silica spheres. Transmission measurements of the artificial opalhave been conducted, which shows that the artificial opal is quasi-full band gap silica photonic crystals in the visible region.     

Dissolution of Al<Subscript>2</Subscript>TiO<Subscript>5</Subscript> inclusions in CaO-SiO<Subscript>2</Subscript>-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> slags at 1823 K

Al-Ti-O inclusions always clog submerged nozzles in Ti-bearing Al-killed steel. A typical synthesized Al₂TiO₅ inclusion was immersed in a CaO-SiO₂-Al₂O₃ molten slag for different durations at 1823 K. The Al₂TiO₅ dissolution paths and mechanism were revealed by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). Decreased amounts of Ti and Al and increased amounts of Si and Ca at the dissolution boundary prove that inclusion dissolution and slag penetration simultaneously occur. SiO₂ diffuses or penetrates the inclusion more quickly than CaO, as indicated by the w(CaO)/w(SiO₂) value in the reaction region. A liquid product (containing 0.7–1.2 w(CaO)/w(SiO₂), 15wt%–20wt% Al₂O₃, and 5wt%–15wt% TiO₂) forms on the inclusion surface when Al₂TiO₅ is dissolved in the slag. Al₂TiO₅ initially dissolves faster than the diffusion rate of the liquid product toward the bulk slag. With increasing reaction time, the boundary reaches its largest distance, the Al₂TiO₅ dissolution rate equals the liquid product diffusion rate, and the dissolution process remains stable until the inclusion is completely dissolved.     

Highly <Emphasis Type="Italic">C</Emphasis>-axis oriented LiNbO<Subscript>3</Subscript> thin film on amorphous SiO<Subscript>2</Subscript> buffer layer and its growth mechanism

LiNbO3 waveguiding films with highly C-axis orieatation and superior crystallographic quality have been deposited on the amorphous SiO2 buffer layer of Si wafer by pulsed laser deposition (PLD) technique. X-ray diffraction,high-resolution electron transmission microscopy and atomic force microscopy were applied to characterizing the quality and orientaion of LiNbO3 thin film, and the optimized depositioa coaditioas have been determined for C-axis oriented growth. LiNbO3 thin films on amorphous SiO2 buffer layer were composed of intimate arrangements of quadrangular single crystal domain (150 nm x 150 nm) with C-axis orientatioa, and displayed sharp interface structures. The measurements of prism coupling technique indicate that the laser can be coupled into the LiNbO3 film and TE and TM waveguiding modes were detected. In addition, the possible mechanism of oriented growth on amorphous buffer layer and “film-substrate effects“ were discussed briefly, which suggests that its growth mechanism is likely analogous to the Voimer model with characteristics of three-dimensional islands nucleation on the smooth crystal surface.     

纳米棒插接多级孔ZSM-11分子筛形貌影响因素研究

采用先低温后高温的两段晶化方法在含有四丁基溴化铵的单一模板体系中合成具有插接形貌的ZSM-11分子筛。分别从硅源、铝源、硅铝比、碱源和模板剂的种类对插接形貌形成的影响因素进行分析。结果表明:硅源、铝源以及碱源的种类主要是通过影响解聚-聚合的速率来影响体系的成核以及晶体生长的速率,从而对结晶动力学以及最终产品的晶粒尺寸产生影响,并不会对插接形貌产生大的影响;与固体硅源(硅胶小球)相比,使用液体硅源(硅溶胶和水玻璃)能够在较短时间内得到尺寸较小的分子筛产品;与无机铝源相比,采用异丙醇铝较易在短时间内获得小晶粒产品;与Li+和Na+相比,含有K+的体系中产品分子筛尺寸较大;模板剂的种类直接影响到最终结晶产物的形貌特征,四丁基铵离子的存在是这种插接形貌形成的必要条件。随着合成体系含铝量的减小,插接形貌变得不再明显,铝的存在是这种插接形貌形成的必不可少的影响因素之一。     

Synthesis of highly ordered SnO2／Fe2O3 composite nanowire arrays by electrophoretic deposition method

Highly ordered SnO2/Fe2O3 composite nanowire arrays have been synthesized by electrophoretic deposition method. The morphology and chemical composition of SnO2/Fe2O3 composite nanowire arrays are characterized by SEM, TEM, EDX, XPS, and XRD. The results show that the SnO2/Fe2O3 composite nanowires are about 180 nm in width and tens of microns in length, and they are composed of small nanoparticles of tetraganal SnO2 and rhombohedral α-Fe203 with diameters of 10-15nm. The SnO2/Fe2O3 composite nanowires are formed by a series of chemical reactions.     

Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micrometres

Photonic technology, using light instead of electrons as the information carrier, is increasingly replacing electronics in communication and information management systems. Microscopic light manipulation, for this purpose, is achievable through photonic bandgap materials, a special class of photonic crystals in which three-dimensional, periodic dielectric constant variations controllably prohibit electromagnetic propagation throughout a specified frequency band. This can result in the localization of photons, thus providing a mechanism for controlling and inhibiting spontaneous light emission that can be exploited for photonic device fabrication. In fact, carefully engineered line defects could act as waveguides connecting photonic devices in all-optical microchips, and infiltration of the photonic material with suitable liquid crystals might produce photonic bandgap structures (and hence light-flow patterns) fully tunable by an externally applied voltage. However, the realization of this technology requires a strategy for the efficient synthesis of high-quality, large-scale photonic crystals with photonic bandgaps at micrometre and sub-micrometre wavelengths, and with rationally designed line and point defects for optical circuitry. Here we describe single crystals of silicon inverse opal with a complete three-dimensional photonic bandgap centred on 1.46 microm, produced by growing silicon inside the voids of an opal template of dose-packed silica spheres that are connected by small 'necks' formed during sintering, followed by removal of the silica template. The synthesis method is simple and inexpensive, yielding photonic crystals of pure silicon that are easily integrated with existing silicon-based microelectronics.     

三角形结构复合二维光子晶体的透射谱

选择3种不同介质柱半径的光子晶体构造复合二维光子晶体,采用时域有限差分方法（FDTD）,计算3种二维光子晶体和复合二维光子晶体的透射谱．结果表明：复合二维光子晶体的禁带宽度近似等于3种光子晶体带隙的叠加结果,结果还表明,随着介质柱半径的增大,光子晶体的带隙向长波方向移动．     

基于聚苯乙烯模板的二维光子晶体的制备

给出了一种制备聚苯乙烯小球蛋白石结构光子晶体,并运用单层聚苯乙烯小球为模板制备了一系列二维光子晶体的方法,包括α-Fe_2O_3二维碗状光子晶体和ZnO柱二维光子晶体结构,并通过大面积反射谱测量了聚苯乙烯胶体光子晶体的光子带隙.聚苯乙烯小球模板法制备方法简单,成本低,重复性好,而且是大面积生长,为制备各种形貌的二维光子晶体提出了新思路.     

Preparation and luminescence characteristics of Sr3SiO5：Eu^2＋ phosphor for white LED

The Sr3SiO5：Eu^2＋ phosphor was synthesized by high temperature solid-state reaction. The emission spectrum of Sr3SiO5：Eu^2＋ shows two bands centered at 487 and 575 nm, which well agree with the theoretic values of emission spectrum. The excitation spectrum for 575 nm emission center has several excitation bands at 365, 418, 458 and 473 nm. And the results show that the emission spectrum of Sr3SiO5：Eu^2＋ is influenced by the Eu^2＋ concentration. The relative emission spectra of the white-emitting InGaN-based YAG：Ce^3＋ LED and Sr3SiO5：Eu^2＋ LED were investigated. The results show that the color development of InGaN-based Sr3SiO5：Eu^2＋ is better than that of InGaN-based YAG：Ce^3＋, and the CIE chromaticity of InGaN-based Sr3SiO5：Eu^2＋ is （x=0.348, y=0.326）.