氰桥配合物[Ni(Ⅱ)Ln]_2[Fe(Ⅱ)(CN)_6]的光谱研究

亚铁氰化钾水溶液和[NiLn]~(2+)(L=H_2dmg和tetren分别表示丁二酮肟和四乙烯五胺)溶液反应得到比较稳定的红棕色晶体。经元素分析、UV-Vis光谱和红外光谱的测试,证明它们是氰桥配合物[Ni(Ⅱ)Ln-NC-Fe(Ⅱ)(CN)_4-CN-Ni(Ⅱ)Ln]。     

Zn2SnO4复合氧化物气敏特性研究

采用烧结法合成Zn_2SnO_4复合氧化物,具有反尖晶石结构的弱N型半导体材料,其气敏性能引人注目,尤其是对乙醇具有较高的灵敏度和选择性.当掺入少量氧化物杂质,可以看到灵敏度和最佳工作温度都有所改善,其中以稀土氧化物效果为最佳.     

舟形蝗属一新种(直翅目:斑腿蝗科)

本文记述采自云南东川市的舟形蝗属Lcmba Huang,1983一新种。本新种与舟形蝗属已知种的主要区别为:前翅较长,超过腹部第二节背板后缘;后足胫节淡黄绿色;雄性下生殖板末端微凹但不加宽。     

结晶紫—锗钨酸—PVA体系显色反应的研究

本文研究了结晶紫-锗钨酸-PVA体系的显色反应。显色反应的条件是:[H_2SO_4]=0.13mol/L,(结晶紫)=1.2×10~(-4)mol/L,(聚乙烯醇)=0.32％。结晶紫-锗钨酸缔合物的最大吸收在545nm处,表观摩尔吸光系数为1.1×10~5L·mol~(-1)·cm~(-1),锗钨酸在0-3.2×10~(-6)mol/L范围内服从比耳定律,发色完全后1小时内吸光度稳定。由热重量法及摩尔比法测得离子缔合物中结晶紫离子:GeW_(12)O_(40)~(4-)=3:1。     

NO adsorption study on the distribution of Ni2 + ions on the various micro-environments of carriers

The decrease of the electron density in the d orbits of Ni2+ ions, resulting from the disturbance of micro-environments in which Ni2+ ions are located, makes the frequency of adsorbed NO shift higher. The shift degree is determined mainly by the property of the microenvi-ronments. When Ni2+ ions are located on SII , SII · (SI ·) sites of Y zeolite or on the surface of γ-alumina, their NO adsorption gives rise to IR bands at 1 905, 1 900 and 1 855-1 875 cm-1, respectively. The distribution of Ni2 + ions on the various micro-environments of USY zeolite, AI2O3 and MS mixed carrier has also been discussed according to the different frequencies of adsorbed NO, as well as the influence of NiO loading.     

校园网Web应用开发模式研究

文章在详细分析校园网WEB应用系统开发模式、框架结构、系统构成的基础上,对创建校园网Web应用系统中的关键技术如:系统集成管理、组件复用、虚拟教学、数据格式统一、模板设计等进行了详细的论述和具体的应用开发建议。     

足球快速反击战术刍议

快速反击战术是当今足球比赛的重要特征之一，影响运动员快速能力的因素体现在跑速、动作结构、动作速率、传球速度等六个方面，足球比赛中应注重培养运动员的快速反击意识、节奏感和抢截能力。     

Hemispherical variations in seismic velocity at the top of the Earth's inner core

Knowledge of the seismic velocity structure at the top of the Earth's inner core is important for deciphering the physical processes responsible for inner-core growth. Previous global seismic studies have focused on structures found 100 km or deeper within the inner core, with results for the uppermost 100 km available for only isolated regions. Here we present constraints on seismic velocity variations just beneath the inner-core boundary, determined from the difference in travel time between waves reflected at the inner-core boundary and those transmitted through the inner core. We found that these travel-time residuals-observed on both global seismograph stations and several regional seismic networks-are systematically larger, by about 0.8 s, for waves that sample the 'eastern hemisphere' of the inner core (40 degrees E to 180 degrees E) compared to those that sample the 'western hemisphere' (180 degrees W to 40 degrees E). These residuals show no correlation with the angle at which the waves traverse the inner core; this indicates that seismic anisotropy is not strong in this region and that the isotropic seismic velocity of the eastern hemisphere is about 0.8% higher than that of the western hemisphere.     

High-performance thin-film transistors using semiconductor nanowires and nanoribbons

Thin-film transistors (TFTs) are the fundamental building blocks for the rapidly growing field of macroelectronics. The use of plastic substrates is also increasing in importance owing to their light weight, flexibility, shock resistance and low cost. Current polycrystalline-Si TFT technology is difficult to implement on plastics because of the high process temperatures required. Amorphous-Si and organic semiconductor TFTs, which can be processed at lower temperatures, but are limited by poor carrier mobility. As a result, applications that require even modest computation, control or communication functions on plastics cannot be addressed by existing TFT technology. Alternative semiconductor materials that could form TFTs with performance comparable to or better than polycrystalline or single-crystal Si, and which can be processed at low temperatures over large-area plastic substrates, should not only improve the existing technologies, but also enable new applications in flexible, wearable and disposable electronics. Here we report the fabrication of TFTs using oriented Si nanowire thin films or CdS nanoribbons as semiconducting channels. We show that high-performance TFTs can be produced on various substrates, including plastics, using a low-temperature assembly process. Our approach is general to a broad range of materials including high-mobility materials (such as InAs or InP).     

Interaction of reelin signaling and Lis1 in brain development

Loss-of-function mutations in RELN (encoding reelin) or PAFAH1B1 (encoding LIS1) cause lissencephaly, a human neuronal migration disorder. In the mouse, homozygous mutations in Reln result in the reeler phenotype, characterized by ataxia and disrupted cortical layers. Pafah1b1(+/-) mice have hippocampal layering defects, whereas homozygous mutants are embryonic lethal. Reln encodes an extracellular protein that regulates layer formation by interacting with VLDLR and ApoER2 (Lrp8) receptors, thereby phosphorylating the Dab1 signaling molecule. Lis1 associates with microtubules and modulates neuronal migration. We investigated interactions between the reelin signaling pathway and Lis1 in brain development. Compound mutant mice with disruptions in the Reln pathway and heterozygous Pafah1b1 mutations had a higher incidence of hydrocephalus and enhanced cortical and hippocampal layering defects. Dab1 and Lis1 bound in a reelin-induced phosphorylation-dependent manner. These data indicate genetic and biochemical interaction between the reelin signaling pathway and Lis1.