ZnO（10-↑10）面结构的从头计算

基于密度泛函理论（DFT）的第一原理超级原胞模型,计算了ZnO（10-↑10）非极性表面的结构．计算结果表明,顶层Zn原子明显向体内弛豫0．0328nm,第2层Zn原子的弛豫远离体材料0．0237nm,使得它类似于表面原子．顶层O原子的弛豫仅为0．0146nm,导致表面Zn-O二聚体有强烈扭转．扭转角达9．2°．计算结果与其他理论计算结论和实验结论吻合的很好．此外,还计算分析了ZnO的态密度．     

ZnO(101-0)面结构的从头计算

基于密度泛函理论(DFT)的第一原理超级原胞模型,计算了ZnO(101-0)非极性表面的结构.计算结果表明,顶层zn原子明显向体内弛豫0.0328nm,第2层zn原子的弛豫远离体材料0.0237 nm,使得它类似于表面原子.顶层O原子的弛豫仅为0.0146nm.导致表面Zn-0二聚体有强烈扭转.扭转角达9.2..计算结果与其他理论计算结论和实验结论吻合的很好.此外,还计算分析了ZnO的态密度.     

头孢拉定荧光光度法测定环境水中铬(VI)

基于铬（VI）对荧光试剂头孢拉定（CEFC）的荧光熄灭,建立了测定铬（VI）的荧光分析方法．在pH=3．0的盐酸介质中,最大激发与发射波长分别350nm和431nm及CEPC加入量为0．400g／L等条件下,相对荧光强度F护与铬（VI）的浓度lgc呈良好的线性关系,测定铬（VI）浓度的线性范围为1．0×10^-6-4．0×10^-4mol／L,检出限为8．3×10^-7-mol／L,常见的共存离子不干扰测定,此分析方法可用于环境水样中铬（VI）含量的测定．     

Si（111）面电子结构、表面能和功函数的第一性原理研究

本文采用基于密度泛函理论（DFT）框架下的平面波超软赝势法研究了体相Si和Si（111）面。计算得到的体相Si的晶格常数、体积模量和结合能较好地与其它文献结果吻合。在表面结构中，由于Si-3p态的影响导致键长和电荷密度的改变。键长在第一二层，二三层和三四层之间由2．338A变为2．286A，2．382A，2．352A，电荷密度由0．57946×10^3 electrons／nm^3变为0．60419×10^3，0．5143×10^3和0．55925×10^3 electrons／nm^3。计算得到的Si（111）的表面能和功函数为Si的应用提供了理论依据。     

基于（Sn，Ba，La）·（P04）3C1．Eu纳米颗粒荧光猝灭法测定废水中Cr（VI）

基于Cr（VI）对（Sn,Ba,La）5·（PO4）3Cl·Eu纳米颗粒的荧光猝灭作用,建立了用琼脂溶液来固定分散（Sn,Ba,La）5·（PO4）3Cl·Eu纳米颗粒并用于测定水中微量Cr（VI）的荧光分析新方法．研究表明：Cr（Ⅵ）离子对固定于琼脂溶液中的（Sn,Ba,La）5·（PO4）5Cl·Eu纳米颗粒有荧光猝灭作用．在pH=9．0的条件下,测定的荧光最大激发波长和发射波长分别为271nm和447nm,测定Cr（VI）浓度的线性范围为4．0×10^-6mol／L^-1．4×10^-4mol／L,检测限为2．99×10^-6mol／L,回收率为98．9％～103．0％．方法具有良好的重现性和选择性,一些常见金属离子不干扰测定．应用于环境水中Cr（VI）离子含量的测定,结果满意．     

流动注射法测定鱼塘水样中的NO-2和NO-3含量

采用流动注射技术测定鱼塘水样中的NO2^-和NO3^-含量,以对氨基苯磺酸和甲萘胺盐酸盐为显色剂,在510nm下比色测定NO2^-的含量,而NO3^-则在稀醋酸条件下用锌粉将其预还原成NO2^-后,也在上述相同的条件下测定其含量．测定NO2^-的线性范围为0．10×10^-6～3．00×10^-6mol·L^-1,检出限为0．038×10^-6mol·L^-1,测定频率达80次·h^-1;测定NO3^-的线性范围为0．10×10^-6～3．00×10^-6mol·L^-1,检出限为0．040×10^-6mol·L^-1．     

纳米ZnO对大型潘的急性毒性效应研究

以大型蜃为模式生物,研究了自然光照（光暗比为12h：12h）和黑暗条件下纳米ZnO对水生生物的急性毒性效应．实验结果表明,在自然光照条件下,不同粒径纳米ZnO对大型潘的毒性顺序为（25±5）和（10±1）〉（90±10）nm,其EC50分别为12．21,9．96和167．36mg／L;黑暗备件下,（10±1）,（25±5）和（90±10）nm ZnO对大型潘抑制的EC50分别为19．64,206．70和409．84mg／L．由此可以看出,纳米ZnO在光照条件下对大型潘的影响大于黑暗条件,且粒径大小影响其毒性强弱．     

胶束电动毛细管电泳法测定维生素B4

采用胶柬电动毛细管电泳（MEKC）法测定维生素B的含量,电泳缓冲液为2．0×10^-2mol／L硼砂-硼酸缓冲液（pH=8．4）,含2．5％（V／V）甲醇及10mmol／L十二烷基硫酸钠（SDS）,在电泳电压20kV和检测波长254nm的条件下,维生素B4具有最佳的迁移时间和峰形;考察了缓冲溶液的pH、浓度、有机改性剂及胶束对维生素B4迁移行为的影响．结果表明：维生素B4在8．0×10^-7～5．0×10^-5mol／L内成良好的线性关系（r=0．9999）,方法的检出限为1．2×10^-7mol／L,RSD为2．24％,该法已成功用于药剂、血清和尿液中维生素Ba的测定．     

两种Cr(Ⅲ)配合物的合成、结构和光物理性质

采用溶剂热合成方法,得到了2种Cr（Ⅲ）配合物：Cr（oxinate）3·CH3CH2OH（1）和Cr（oxinate）3·CH3OH（2）．对2种化合物的单晶体进行X-射线衍射分析,确定了分子结构和晶体结构．2种化合物均为单斜晶系,P2（1）／n空间群．晶胞参数分别为：a=1．1255nm,b=1．3281nm,c=1．6783nm,α=90°,β=94．479°,γ=90°,V=2．5011nm^3,Z=4,F=1．052,R=0．0511（1）;a=1．0912nm,b=1．3136nm,c=1．6847nm,α=90°,β=97．73°,γ=90°,V=2．3930nm^3,Z=4,F=1．098,R=0．0467（2）．结构解析表明,2种化合物均存在着分子内氢键．对2种化合物的UV—VIS-NIR和荧光光谱进行了测定、分析指认和对比．     

Na3H3[C4FN3OH4]6[TeMo6O24]·8H2O和Na2H[C4FN3OH4]2[Al（OH）6Mo6O18]·13H2O的合成与晶体结构

采用常规方法合成了2个Anderson型多金属氧酸盐Na3H3[C4FN3OH4]6[TeMo6O24]·8H2O（Ⅰ）和Na2H[C4FN3OH4]2[Al（OH）6Mo6O18]·13H2O（Ⅱ）．通过元素分析、红外光谱、热重分析、X射线单晶衍射对其进行了表征．结果表明：2个化合物均属于三斜晶系,P-1空间群;化合物Ⅰ的晶胞参数a=1．10691（10）nm,b=1．14899（10）nm,c=1．35807（12）nm,a=71．63（2）°,β=66．25（10）°,γ=67．44（2）°,V=1．4334（2）nm^3,Z=1,R1=0．0748,wR2=0．1279;化合物Ⅱ的晶胞参数a=0．68788（4）nm,b=1．16845（7）nm,C=1．30690（8）nm,a=81．3390（10）°,β=77．8900（10）°,γ=79．5480（10）°,V=1．00307（10）nm^3,Z=1,R1=0．0314,wR2=0．0995．     

First-Principles Study of ZnO (10(1)0) non- polar Surface

The structure of the ZnO(10 0) non-polar surface is studied using first-principles slab calculations based on density functional theory(DFT). We find that the uppermost zinc atoms have a significant relaxation towards the bulk 0.328 ? ,and the Zn atoms in the second layer show a significant relaxation away from the bulk 0. 237 (A) ,allowing them to appear as surface atoms. For oxygen atoms a small relaxation 0. 146(A) is found. Which leading to a rotation angle 9. 2° of the Zn-O dimer on the surface. Results in excellent agreement with experiment have been obtained for the geometric and electric structures.     

Theoretical calculations on the atomic and electronic structure of β-SiC(110) surface

We present a theoretical calculation of the atomic and electronic structure of β-SiC and its non-polar (110) surface using the full potential linear augmented plane wave (FPLAPW) approach. The calculated lattice constant and bulk modulus of β-SiC crystal are in excellent agreement with experimental data. The atomic and electronic structure of β-SiC(110) surface has been calculated by employing the slab and supercell model. It is found that the surface is characterized by a top-layer bond-length-contracting rotation relaxation in which the Si-surface atom moves closer towards the substrate while the C-surface atom moves outward. This relaxation is analogous to that of Ⅲ-Ⅴ semi-conductor surface. The driving mechanism for this atomic rearrangement is that the Si atom tends to a planar sp2-like bonding situation with its three N neighbors and the N atom tends to a p3-like bonding with its three Si neighbors. Furthermore, surface relaxation induces the change from metallic to semiconducting characterization.     

Theoretical calculations on the atomic and electronic structure of β-SiC(110) surface

We present a theoretical calculation of the atomic and electronic structure of β-SiC and its non-polar (110) surface using the full potential linear augmented plane wave (FPLAPW) approach. The calculated lattice constant and bulk modulus of β-SiC crystal are in excellent agreement with experimental data. The atomic and electronic structure of β-SiC(110) surface has been calculated by employing the slab and supercell model. It is found that the surface is characterized by a top-layer bond-length-contracting rotation relaxation in which the Si-surface atom moves closer towards the substrate while the C-surface atom moves outward. This relaxation is analogous to that of Ⅲ-Ⅴ semiconductor surface. The driving mechanism for this atomic rearrangement is that the Si atom tends to a planar sp²-like bonding situation with its three N neighbors and the N atom tends to a p³-like bonding with its three Si neighbors. Furthermore, surface relaxation induces the change from metallic to semiconducting characterization.     

First-principle study on the surface atomic relaxation properties of sphalerite

The surface properties of sphalerite (ZnS) were theoretically investigated using first principle calculations based on the density functional theory (DFT). DFT results indicate that both the (110) and the (220) surfaces of sphalerite undergo surface atom relaxation after geometry optimization, which results in a considerable distortion of the surface region. In the normal direction, i.e., perpendicular to the surface, S atoms in the first surface layer move outward from the bulk (d₁), whereas Zn atoms move toward the bulk (d₂), forming an S-enriched surface. The values of these displacements are 0.003 nm for d₁ and 0.021 nm for d₂ on the (110) surface, and 0.002 nm for d₁ and 0.011 nm for d₂ on the (220) surface. Such a relaxation process is visually interpreted through the qualitative analysis of molecular mechanics. X-ray photoelectron spectroscopic (XPS) analysis provides the evidence for the S-enriched surface. A polysulphide (S_n2-) surface layer with a binding energy of 163.21 eV is formed on the surface of sphalerite after its grinding under ambient atmosphere. This S-enriched surface and the S_n2- surface layer have important influence on the flotation properties of sphalerite.     

Ru(0001)和(1010)表面上NH_3吸附结构研究

利用密度泛函理论,在slab模型下,研究NH3在Ru表面的吸附行为.结果表明,NH3在Ru(0001)和Ru(1010)面上的优势吸附位皆为顶位.NH3的吸附是化学吸附且具有表面结构敏感性,与密堆积表面(0001)相比,NH3在开放的(1010)面上的吸附更加稳定,吸附能达到1.08 eV.电子结构计算结果表明,NH3通过其3a1轨道与表面Ru原子的4dz2和5s态混合吸附于表面.     

金红石型纳米TiO2(110)表面原子结构和电子结构的理论研究

利用MaterialsStudio软件采用密度泛函理论的全势PLAPW方法研究了金红石型纳米TiO₂的表面原子和电子结构及其性质。计算结果表明:金红石型纳米TiO₂(110 )表面原子结构发生了弛豫和重构,随着原子层厚度的增加,相应的弛豫距离减小,表面禁带宽度降低,具有了准金属特性。表面HOMO和LUMO轨道分别是由Ti⁴⁺的p轨道和d轨道构成,其表面的活性位为Ti⁴⁺。     

Dynamics of the silicon (111) surface phase transition

The manner in which phase transformations occur in solids determines important structural and physical properties of many materials. The main problem in characterizing the kinetic processes that occur during phase transformations is the difficulty of observing directly, in real time, the growth of one phase at the expense of another. Here we use low-energy electron microscopy to study the real-time kinetics of a phase transformation confined to the silicon (111) surface. We show that the transformation is governed by the rate at which material is exchanged between the first layer of the crystal and the surface. In bulk phase transformations, the dynamics are usually governed either by the rate of diffusion of material to the phase boundaries or by the structural rearrangement of atoms at the phase boundary. The kinetic process that we have identified here has no bulk analogue and leads to domain dynamics that are qualitatively different from those expected for bulk systems.     

First-principles Study of the Au surfactant on the growth of Zn vacancies in ZnO nanostructures

Influence of Au surfactant on the growth of Zn atom vacancies in ZnO nanostructures has been investigated by using first-principles slab calculations based on density functional theory.The adsorption of Au atoms on the Zn-terminated (0001)polar surface with a (2×2)surface unit cell is studied by using a standard supercell model.It is found that (1)the binding energies of Au atoms on (0001)-Zn increase and the most stable position of the Au atom is invariable; (2)on the (0001)surface,the preferred sites for Zn atom vacancy are on the first layer of Zn atoms; (3)Under the Au surfactant,the Zn atom vacancies become more difficult to form.     

Sn对O原子在ZnO(0001)-Zn极性面上吸附影响的第一性原理研究

采用第一性原理系统地研究了Sn原子存在时对ZnO (0001)极性面再吸附原子的影响.计算了Sn、O(Zn)原子吸附在(0001)表面的总能以及在(0001)极性表面存在有Sn、O原子时候再次吸附O、Sn原子的总能.通过比较这几种吸附体系的总能,我们得到:(0001)表面在有Sn原子存在的情况下吸附的O原子比O原子直接在(0001)面上的吸附更加稳定;在Sn 原子存在情况下(0001)表面再次吸附原子后的稳定构型是(0001)-O-Sn而不是(0001)-Sn-O,这使得Sn原子恒存在于顶部,起到催化效果.     

Si在Au(111)面的电子结构和光学性质的第一性原理研究

基于第一性原理,对Si原子在Au(111)表面和体内掺杂的电子结构和光学性质进行了比较研究。结果表明,在Au(111)体内掺杂时,Si原子与周围六个Au原子成键,p电子更局域。电荷密度分析表明,掺杂Si后,Au原子周围的电子密度明显减少,而SiAu原子之间的电子密度明显增加,电子由Au原子向SiAu原子之间转移。通过计算Mul-liken键级表明,SiAu原子之间形成共价键,表面掺杂时的SiAu键级比体内大。吸收谱的计算表明,在体内掺杂Si原子时的吸收谱明显增强。