单根In掺杂的n-ZnO纳米线/p+-Si异质结的紫外电致发光

采用化学气相沉积的方法在In_0.1Ga_0.9N衬底上生长出In掺杂的n-ZnO纳米线阵列。电学输运测量得到单根n-ZnO纳米线的电阻率为0.001 Ω cm,比同样方法在GaN衬底上生长的ZnO纳米线低约20倍。这个结果表明来自于In_0.1Ga_0.9N衬底中的In原子在高温生长过程中可能被掺入ZnO纳米线。制备成功单根n-ZnO纳米线/p⁺-Si异质结构并研究了其电致发光特性。室温下电致发光光谱中可以看到一个窄的ZnO激子峰（约380 nm）和一个中心位于700 nm 的来自Si衬底表面自然氧化硅发光中心的发光峰。     

羟基磷灰石纳米线的可控制备

用P2O5和Ca(NO3)2作为前驱体溶液，将溶胶—凝胶法与氧化铝模板(AAO)技术相结合，大面积制备出结构均匀、晶相一致、彼此平行且高度有序的羟基磷灰石(HAP)纳米线．结果表明，通过控制制备AAO模板的条件，可达到控制HAP形貌的目的．     

物理热蒸发法制备CdS/SiO2纳米线阵列和CdS纳米带

利用物理热蒸发法蒸发CdS和CdO的混合粉末，Si衬底表面发生了选择性刻蚀，并由此制备出CdS／SiO2纳米线阵列和CdS纳米带．研究了CdS／SiO2纳米线阵列的形成原因和CdS纳米带的生长过程，结果表明：CdS枝晶的生长对CdS／SiO2纳米线阵列的形成起到了非常重要的作用；CdS／SiO2纳米线阵列的形成符合“纳米电化学自组织机制”；CdS纳米带的生长过程为气一目过程．     

稀土掺杂TiO2纳米线阵列的可见光催化性能

采用溶胶-电泳沉积法在多孔阳极氧化铝模板上制备了TiO2光催化纳米线,合成了具有高比表面积的糖葫芦状M/TiO2(M代表La3+、Ce3+、Nd3+)纳米线阵列体系。采用SEM对样品进行了表征,表明M/TiO2纳米线阵列保持了模板的有序性;对甲基橙的可见光降解实验表明,稀土金属离子掺杂TiO2纳米线阵列体系具有非常优良的可见光催化性能;紫外-可见吸收光谱测试表明,La3+、Ce3+、Nd3+掺杂增强了TiO2在可见光区域的吸收能力,吸收带边红移至可见光区,未掺杂的TiO2禁带宽度为3.24eV,掺La3+、Ce3+、Nd3+的M/TiO2禁带宽度分别减小至2.6eV、2.8eV、2.0eV,这和光催化性能是大致相对应的。     

Si NWs/GQDs复合结构的设计及其光电催化性能

采用金属催化化学蚀刻法制备硅纳米线阵列（silicon nanowire arrays,Si NWs）,通过高速旋涂仪将自上而下法制备的石墨烯量子点（graphene quantum dots, GQDs）负载到Si NWs上。X射线光电子能谱（X-ray photoelectron spectroscopy, XPS）等表征结果证明,GQDs能够通过高速旋涂仪负载到Si NWs上。扫描电子显微镜（scanning electron microscopy, SEM）形貌观测结果表明,蚀刻时间与Si NWs纳米线长度成正比。光电化学测试结果表明,性能最优的蚀刻时间为45 min。与原始硅片相比,GQDs负载的Si NWs光电密度达到了0.95 mA/cm²,性能提升了30多倍。电化学交流阻抗（electrochemical impedance spectroscopy, EIS）测试结果表明：GQDs的加入能显著提升载流子的传输效率。紫外–可见漫反射光谱（ultravioletray-visible diffuse reflectance spectroscopy, UV-Vis DRS）结果显示负载GQDs可以有效提升Si NWs对光的吸收效果。     

Fabrication of gold nanoelectrodes based on nanolithography electrochemically through a conductive AFM tip

Gold nanoelectrodes were fabricated by approach of combining surface self-assembly with nanolithography electrochemically through a conductive AFM tip. The controllahle structure with width and distance in nanometer as a template was constructed by nanolithography patterning process, which was accomplished by a conductive AFM tip on certain highly ordered long-tail organosilane monolayers. Then through adsorption of Cd^2＋ and exposure of the Cd^2＋-loaded surface to gaseous H2S, CdS nanowires were generated in a template-controlled self-assembly process. Finally, metallic gold nanowires were conversed from CdS nanowires by treatment with the aqueous solution of HAuCl4 via a redox chemical process, which had good conductivity proved by C-AFM.     

细胞色素C在纳米银线阵列传感器上的电化学研究

在自制的多孔阳极氧化铝模板辅助下,用直流电解法在玻碳电极表面成功生长了大面积的纳米银线阵列。高分辨扫描电镜照片显示,银纳米线阵列均匀有序,单根纳米线的直径约40 nm,这与所用氧化铝模板的平均孔径(40 nm)相当吻合。将银纳米线阵列传感器用于细胞色素C的电化学研究,灵敏度大大提高,检测限达到0.1 mg/mL。     

激光微织构泡沫铜的氧化铜纳米线制备及其光催化性能研究

本文采用激光织构与热氧化法相结合,以泡沫铜为基底制备具有微阵列结构的氧化铜纳米线(CuO NWs).采用扫描电子显微镜(SEM)、X射线能谱仪(EDS)和X射线衍射仪(XRD)对样品表面形貌及成分进行表征,讨论激光织构表面微结构对氧化铜纳米线生长的促进作用,设计不同的加工参数研究激光织构对氧化铜纳米线生长的影响,并通过光催化降解甲基橙溶液考察了CuO NWs的光催化性能.实验结果表明,经过激光织构的泡沫铜能增大纳米线的生长面积,提高样品表面氧元素的含量,有效地促进生长过程中氧化铜纳米线长度和密度的提高.不同的激光参数对纳米线的生长产生一定影响,具有良好的调控作用.CuO NWs光催化降解甲基橙的降解率可达97%,循环测试5次后的降解率仍可保持在96%,可见其稳定性良好,而且其片状结构更易回收,重复利用率高,具有优异的光催化性能.     

用X射线衍射研究不同直径镍纳米线阵列的生长方向

大面积有序的不同直径的镍纳米线阵列在多孔氧化铝模板中通过直流电化学沉积制备,利用X光衍射研究了它们的生长方向。充分利用X光的特点对镍纳米线阵列的正反两面进行了测量,结果发现随着纳米线直径的增加,镍纳米线方向向由[110]方向开始向[111]方向转变。并且,利用高分辨透射电镜进行观测,结果发现和XRD得到的结果是一致的。这进一步说明了利用X光来研究纳米线的生长方向既简单又准确．该方法将在以后的纳米器件的研究中起到重要的作用,     

基于可控Cd掺杂In2O3纳米线的电学特性研究

文章利用化学气相沉积法合成了不同摩尔比的Cd掺杂的In2O3纳米线,制备了基于单根In2O3纳米线的底栅场效应晶体管,并研究了其电输运特性。结果表明,相对未掺杂的In2O3纳米线,In2O3∶Cd纳米线的电导率有1～2个数量级变化,载流子迁移率高达58.1cm2/(V.s),载流子浓度高达3.7×1018 cm-3。可控Cd掺杂In2O3纳米线将在纳米光电子器件方面有着广泛的应用前景。     

金纳米线阵列的制备及其光学性能研究

采用二次阳极氧化法制备了高度有序的多孔氧化铝模板,并基于该氧化铝模板,采用脉冲直流电化学沉积的方法制备了金纳米线阵列.利用扫描电子显微镜（SEM）、透射电子显微镜（TEM）和X线衍射仪（XRD）对所制备的金纳米线的形貌及晶体结构进行分析.结果表明：不同的沉积电压下制备的金纳米线具有不同的生长取向性,当沉积电压为3V时制备出的金纳米线沿[200]方向具有明显的生长取向性.利用紫外-可见光谱（UV-Vis）对金纳米线阵列光学性能进行研究,发现金纳米线的等离子体共振吸收峰随着沉积电压的增大先蓝移而后发生红移.     

SnO2纳米线阵列的制备及纳米器件的制作

采用简单的溶胶-凝胶方法在多孔阳极氧化铝模板(AAM)的微孔中制备了高度有序的SnO2纳米线阵列。XRD,SEM和TEM对样品进行了结构和形貌的表征,结果表明,高度有序的SnO2纳米线具有四方相的多晶结构,纳米线连续均匀;并对SnO2纳米线阵列的生长机理进行了探讨;最后用聚焦离子束沉积设备制作了单根SnO2纳米线器件。     

Photoconductive study and carrier dynamics of vertically aligned GaAs nanowires

Single wire devices are generally fabricated to study the electrical and photoelectric behaviors of semiconductor nanowires(NWs);however detriment or contamination can hardly be avoided during manipulation of NWs under focused ion and electron beams.This could not be a trivial factor for III-V NWs which are candidates for high efficiency solar energy harvesting and sensitive photodetection.In this study an alternative way to probe the photoconductive property of individual epitaxial GaAs NWs is presented.For the sample preparation,a uniform spin-coated layer of polymer was selected to be the supporting medium for the vertically aligned NWs structure;then the adequate thinning and polishing of the sample exposed the NW tip and also achieved the required height of NW.An external power adjustable laser was introduced as the excitation source,and the dark and photoconductive currentvoltage properties of individual NW were measured by the conductive atomic force microscopy.The typical Schottky style photoconductive behavior was observed in the vertically aligned GaAs NW,and its photoresponsivity has been found to be much higher than that of the reported for single NW photodetector.Finally,a numerical model based on the experimental setup was established to simulate the photoelectric behavior of individual NW.The minority hole lifetime has been found to dominate the photoconductive current-voltage properties of NW under the positive sample bias,and can be derived from the quantitative fitting of experimental photo-IV curves.     

基于Pd纳米线的过氧化氢无酶传感器

基于AAO模板采用电化学沉积法在玻碳电极表面制备Pd纳米线,采用扫描电子显微镜表征了纳米线的形貌。用Pd纳米线构建了过氧化氢无酶传感器。研究结果表明：该传感器对过氧化氢（H2O2）具有很好的电化学催化作用。对过氧化氢的响应范围为1.0×10^-5-1.62×10^-3mol/L,检出限达到6.0×10^-6mol/L。该传感器具有较好的稳定性和重现性。     

ZnS和C60纳米线阵列的构筑和表征

以多孔氧化铝为模板,通过水热反应制备出ZnS 和 C₆₀纳米线阵列,分别用透射电子显微镜(TEM)、扫描电子显微镜(SEM)、X射线衍射(XRD)、拉曼光谱以及选区电子衍射图谱(SAED)等,对纳米线阵列形貌和化学成分进行表征.结果表明,ZnS 和C₆₀纳米线均为有序阵列.ZnS纳米线为多晶结构,在波长332 nm紫外光激发下, 发射519 nm特征荧光.同时介绍了水热条件下,在多孔氧化铝模板中填充目的产物,以及制备纳米线有序阵列的相关过程.该方法具有一定的普适性.     

非定向氧化锌纳米线阵列的场发射

使用热蒸发的方法在硅基底上制备了非定向氧化锌（ZnO）单晶纳米线阵列。经过热蒸发之后,在硅基底上形成一层均匀分布的 ZnO 点。在这些 ZnO 点上生长出非定向的 ZnO 纳米线阵列,其中的纳米线直径大约在 10 到 20nm 之间。考虑到实用,在制备样品的过程中硅基底的温度始终保持在 500℃ 以下。然后测量了这些非定向 ZnO 纳米线阵列的场发射特性。在 5.5V·μm^-1 场强下得到了 10μA·cm^-2 的场发射电流密度;同时使用透明阳极技术观察了其场发射中心的分布。     

磷酸处理氧化铝模板对Ag纳米线形貌的影响

以磷酸超声处理的多孔阳极氧化铝为模板,用乙二醇在模板的纳米孔道内还原Ag+制备Ag纳米线.用X射线衍射光谱(XRD)、透射电子显微镜(TEM)等检测手段对产物进行了表征,并与未处理的多孔阳极氧化铝为模板在相同条件下制备的样品进行了比较.结果表明,用磷酸处理氧化铝模板后得到的Ag纳米线具有更大的长径比,所得Ag纳米线具有面心立方的晶体结构,长度大于5μm,单体纳米线的直径大约为60 nm.     

ZnO纳米线膜的可控生长及其量子限域效应研究

针对ZnO半导体低维纳电子/光电子器件中纳米线膜的可控性差及其所导致的特性不稳定问题,利用ZnO纳米籽晶层作为引导层,以实现ZnO纳米线膜的垂直取向生长和尺度分布可控制备,并研究低维量子限域效应对ZnO纳米线膜光电特性的影响机制,利用湿化学法在氧化铟锡导电玻璃上制备ZnO籽晶层,随后利用低温水热法进行ZnO纳米线膜的引导生长,样品的显微结构和物相分析表明,通过调节籽晶热处理温度和生长液浓度能够实现ZnO纳米线直径在10～100nm内可调,籽晶热处理温度对纳米线尺度分布影响尤其显著.室温光致发光(PL)谱测试及分析表明,直径小于20nm的ZnO纳米线薄膜样品的PL谱的近紫外带边发射峰相比于更大直径的纳米线样品发生了明显的蓝移,而且半高宽显著减小.利用量子限域效应理论对PL谱带边发射峰随纳米线的尺度分布发生变化的规律进行了合理分析.     

Synthesis of ordered Si nanowire arrays in porous anodic aluminum oxide templates

Highly ordered polycrystalline Si nanowire arrays were synthesized in porous anodic aluminum oxide (AAO) templates by the chemical vapor deposition (CVD) method. The morphological structure, the crystal character of Si nanowire arrays and the individual nanowire were analyzed by the transmission electron microscopy (TEM), scanning electron microscopy (SEM), atom force microscopy (AFM) and the X-ray diffraction spectrum (XRD), respectively. It is shown that most fabricated silicon nanowires (SiNWs) tend to be assembled parallelly in bundles and constructed with highly orientated arrays. This method provides a simple and low cost fabricating craftwork and the diameters and lengths of SiNWs can be controlled, the large area Si nanowire arrays can be achieved easily under such a way. The curling and twisting SiNWs are fewer than those by other synthesis methods.     

SERS mechanism of nickel electrode

Based on the theoretical model for the twodimensional arrays, the dependence of the surface-enhanced Raman scattering (SERS) effect of nickel electrode, especially the ordered two-dimensional nanowires, on the incident photon energy in the range of 0.6–4.0 eV are analyzed, and most of the works are focused on the effect of the shape of nano-particles. The theoretical analysis shows that nickel can exhibit weak surface-enhanced Raman scattering effect when the surface is roughened properly, and the enhancement factor is about 10²–10⁴. Compared to the typical highly SERS-active Ag substrate, the SERS of nickel does not show the character of surface plasma resonance of the metal. The calculated result shows that the lightning-rod effect contributes the most to the SERS of Ni nanowires in the EM mechanism. The theoretical prediction is in good agreement with the experimental result qualitatively and may be instructive to finding a new method to fabricate the SERS-active transition-metal substrate.