XPS Studies of Chemical States of NiO/NiFe Interface

Ta/NTiO/NiFe/Ta multilayers were prepared by radio frequency reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached 9.6 × 103 A/m. The compositions and chemical states at the interface region of NiO/NiFe were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique, The results show that there are two thermodynamically favorable reactions at NiO/NiFe interface: NiO+Fe = Ni + FeO and 3NiO+2Fe =3 Ni+Fe₂O₃. The thickness of the chemical reaction area estimated by angle-resolved XPS was about 1-1.5 nm. These interface reaction products appear magnetic defects, and the exchange coupling field H_ex and the coereivity H_c of NiO/NiFe are affected by these defects.     

Fe-Ni-O-C体系中Fe、Ni的固态还原机理

运用差示扫描量热法、采用XRD检测等手段探讨研究了Fe--Ni--O--C体系中Fe、Ni的还原行为,样品主要包括NiO+C、Fe2 O3+C、NiFe2 O4+C、NiO+Fe2 O3+C和Ni+Fe2 O3+C等5种体系.结果表明:NiO+Fe2 O3体系中由于NiFe2 O4及Fe--Ni合金的生成使得该体系被还原的反应开始温度高于纯NiO,且最大反应速率对应的温度及还原反应结束温度均高于纯NiO但低于纯Fe2O3物质;相对于NiO+Fe2O3,NiFe2O4被C还原的开始及结束温度均更高,且还原速率更小;Fe2O3被C还原可分为三个阶段,金属Ni的存在能够明显促进铁氧化物的还原,主要是促进了Fe的各种氧化物形式(Fe2O3、Fe3O4和FeO)直接向金属Fe形式的转换;数据显示C还原NiFe2O4的过程也基本可分为三个阶段,不同阶段中产物的形态和种类均存在一定差别.     

SiO2/Ta界面反应及其对Cu扩散的影响

利用磁控溅射方法在表面有SiO2层的Si基层上溅射Ta薄膜，采用X射线光电子能谱研究了SiO2/Ta界面以及Ta5Si3标准样品，并进行计算机谱图拟合分析，实验结果表明在制备态在SiO2/Ta界面处有更稳定的化合物新相Ta5Si3和Ta2O5生成，在采用Ta作阻挡层的ULSI铜互连结构中这些反应产物可能有利于对Cu扩散的阻挡。     

具有纳米氧化层自旋阀薄膜的XPS研究

采用X射线光电子能谱(XPS)研究了带有两种纳米氧化层(NOL)Ta/Ni80Fe20/Ir19Mn81/Co90Fe10∥NOL1∥Co90Fe10/Cu/Co90Fe10∥NOL2/Ta的镜面反射自旋阀薄膜的化学结构. 研究结果表明:CoFe/NOL1和NOL2/Ta界面处发生了热力学有利的化学反应. CoFe磁性敏感层仍保持金属特性,部分氧化的CoFe和Ta发生界面反应,使得Ta覆盖层被氧化成Ta2O5,形成NOL2. 由于仍存在部分金属CoFe,NOL1为不连续的氧化层,使得与IrMn层仍存在直接的交换耦合作用. 在退火过程中,IrMn层中的Mn原子扩散到NOL1中;然而,由于NOL1和扩散的Mn原子发生界面反应,生成Mn的氧化物,从而阻止Mn原子的进一步扩散,使其偏聚在NOL1中.     

Effect of Yb2O3 doping on the grain boundary of NiFe2O4–10NiO-based cermets after sintering

xYb2O3–15(20Ni–Cu)/(85?x)(NiFe2O4–10NiO) (x=0, 0.25, 0.5, 0.75, 1.0, 2.0, and 10.0) cermets for aluminum electrolysis were prepared to investigate the effect of Yb2O3 doping on the grain boundary of the cermets after sintering. The results showed that each interface was very clear and that with increasing Yb2O3 content, most of the Yb was evenly distributed at the grain boundary. Moreover, according to the phase composition and microstructural analysis by X-ray diffraction (XRD), scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM/EDX), and electron probe microanalysis (EPMA), YbFeO3 was produced along the grain boundary. The YbFeO3 was concluded to not only have formed from the interaction between the NiFe2O4 or Fe2O3 component and Yb2O3 at the grain boundary of the cermets, but also from the decomposition of NiFe2O4 into NiO and Fe2O3 and the subsequent reaction of Fe2O3 with Yb2O3. Thus, the pro-duction of YbFeO3 resulted in a cermet with high relative density, good electrical conductivity, and good corrosion resistance.     

Fe(2/3)xNi1-xSO4-P2O5/γ-Al2O3的催化性能研究

通过Fe(2 / 3)xNi1-xSO4-P2 O5 /γ -Al2 O3催化剂对 1 -丁烯齐聚反应的催化性能研究 ,考察了催化剂Fe对 (Fe +Ni)的原子分率、焙烧温度、活性组分担载量等催化性能的影响 .结果表明 :Fe0 .5 3Ni0 .2 1SO4复合盐以P2 O5 为助剂的Fe/(Fe+Ni)值为 0 72 ,其担载量为 2 .36mmol/gγ -Al2 O3时催化剂活性最高 .催化剂的最佳活化条件为 4 50℃下非还原气流中活化 4h .     

复合氧化物陶瓷在Na3AlF6-Al2O3熔体中的溶解性

用等温饱和法测定了NiFe2O44,XnFe2O4,XnAl2O4在Na3AlF6-Al2O3熔体中的溶解度,研究了电解质温度、Al2O33浓度和NaF与AlF3的分子比对NiFe2O4溶解度的影响.试验结果表明NiFe2O4组元中Ni和Fe在熔盐中的饱和溶解度分别为0.008 5%和0.070 0%;ZnFe2O4组元中Zn和Fe的饱和溶解度则为0.031 3%和0.070 0%;XnAl2O44组元中Zn的饱和溶解度为0.026 5%;NiFe2O4在铝电解质熔盐中具有较强的抗腐蚀性能,是一种较好的金属陶瓷惰性阳极基体材料;NiFe2O4的溶解过程受离解及离解产物NiO与Fe2Os的化学溶解2个过程的控制,为提高NiFe2O4基陶瓷材料的耐腐蚀性能,宜采用低电解温度、低分子比和高氧化铝浓度等电解条件.     

低温电解条件下铝电解用NiFe_2O_4-10NiO基金属陶瓷阳极Fe元素腐蚀行为研究

采用粉末冶金技术制备出铝电解用NiFe2O4-10NiO陶瓷基体和30(40Cu-Ni)/(NiFe2O4-10NiO)金属陶瓷阳极,并在低温电解条件下,对NiFe2O4陶瓷相中Fe元素的腐蚀行为进行研究。结果表明,在烧结过程中,NiFe2O4尖晶石陶瓷基体会在氮气中发生离解,在动态化学腐蚀试验和电解试验中,陶瓷相中的Fe元素更容易进入电解质;电解24h后,铝液中Fe、Ni、Cu的含量分别为0.45%、0.13%和0.03%。     

SiC/M-Al金属间化合物界面固相反应研究进展

SiC/M(M=Ti,Ni,Fe)-Al金属间化合物界面固相反应的研究是材料科学领域内一个重要的理论研究课题。SiC/M-Al界面固相反应及界面状态决定着SiC/M-Al固相扩散焊接件及SiC/M-Al基复合材料的力学性能和使用性能。文章就近年来SiC/M-Al界面固相反应的研究成果进行综述,包括反应热力学与相平衡分析,反应层的组成与结构以及反应动力学与反应微观机制;并就目前研究的不足以及如何改进提出了一些看法。     

制备工艺对合成ZrO_(2(f))/NiFe_2O_4复合材料的影响

以NiO和Fe2O3为原料采用固相烧结法合成了NiFe2O4尖晶石,通过向其中添加二氧化锆纤维(ZrO2(f))制备了ZrO2(f)/NiFe2O4复合材料.研究了成型压力、烧结温度及烧结时间对复合材料气孔率和抗弯强度的影响,并利用热重分析仪、X射线衍射仪和扫描电子显微镜对复合材料进行了表征.结果表明:在160 MPa成型压力下,于1 300℃烧结6 h制备的ZrO2(f)/NiFe2O4复合材料气孔率较低,具有较高的抗弯强度;复合材料主要由四方相ZrO2和立方相NiFe2O4尖晶石组成;ZrO2(f)未与基体发生反应,避免了过强的界面结合力.     

Magnetic property and interface structure of Ta/NiO/NiFe/Ta

Ta/NiO/NiFe/Ta multilayers, utilizing Ta as buffer layer, were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 9.6×10³ A/m at a NiO film thickness of 50 nm. The composition and chemical states at interface region of Ta/NiO/Ta were studied by using the X-ray photoelectron spectroscopy (XPS) and peak decomp- osition technique. The results show that there is an “inter- mixing layer” at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction 2Ta + 5NiO = 5Ni + Ta₂O₅. This interface reaction has a great effect on exchange coupling. The thickness of Ni+NiO estimated by XPS depth- profiles is about 8—10 nm.     

Chemical states of the atoms in magnetic multilayersTa/NiOx/Ni81Fe19/Ta and Co/AlOx/Co

Ta/NiOx/Ni81Fe19/Ta and Co/AiOx/Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) and the coercivity (Hc)of NiOx/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied. The composition and chemical states at the interface region of NiOx/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1and the valence of nickel is +2. At this point, NiOx is antiferromagnetic NiO and the corresponding Hex is the largest.As the ratio of Ar/O2 deviates from 7, the Hex will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiOx /NiFe, while the Hc will increase due to the metallic Ni. Al layers in Co/AIOx/Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AIOx was 1.2 nm.     

SiO2/Ta interface reaction in magnetic multilayers and its influence on Ta buffer layers

Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an "intermixing layer" at the SiO2/Ta interface due to a thermodynamically favorable reaction: 15 SiO2 + 37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.     

Chemical states of the atoms in magnetic multilayers Ta/NiO x /Ni81Fe19/Ta and Co/AlO x /Co

Ta/NiO _x /Ni₈₁Fe₁₉/Ta and Co/AlO _x /Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (H _ex) and the coercivity (H _c) of NiO _x /Ni₈₁Fe₁₉ as a function of the ratio of Ar to O₂ during the deposition process were studied. The composition and chemical states at the interface region of NiO _x /NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O₂ is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1 and the valence of nickel is +2. At this point, NiO _x is antiferromagnetic NiO and the corresponding H_ex is the largest. As the ratio of Ar/O₂ deviates from 7, the H _ex will decrease due to the presence of magnetic impurities such as Ni⁺³ or metallic Ni at the interface region of NiO _x /NiFe, while the H _c will increase due to the metallic Ni. Al layers in Co/AlO _x /Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AlO _x was 1.2 nm.     

NiO钉扎的自旋阀的结构和磁性

利用反应溅射的方法制备了ＮｉＯ薄膜,并研究了ＮｉＯ对ＮｉＦｅ薄膜的钉扎作用结果表明钉扎场与反应溅射的Ａｒ／Ｏ２比例,总的溅射气压、基底的粗糙度等有很大关系,利用光电子能谱（ＸＰＳ）分析了ＮｉＯ２中的Ｎｉ２Ｏ离子的价态,并制备了ＮｉＯ钉扎的自旋阀Ｔａ／ＮｉＯ／ＮｉＦｅ／Ｃｕ／ＮｉＦｅ／Ｔａ,其磁电阻（ＭＲ）可达到２．２％,忆场为１０．４８ｋＡ／ｍ。     

Study on NiO/Fe interface with X-ray photoelectron spectroscopy

Different monolayers (ML) of Fe atoms were deposited on NiO (001) substrates or NiO underlayers using molecular beam epitaxy (MBE), pulse laser deposition (PLD), and magnetron sputtering (MS). The magnetic properties and microstructure of the films were studied. The apparent magnetic dead layer (MDL) is found to exist at the NiO/Fe interfaces of the MBE sample (about 2 ML MDL), the PLD sample (about 3 ML MDL), and the MS sample (about 4 ML MDL). X-ray photoelectron spectroscopy indicates the presence of ionic Fe (Fe2+ or Fe3+) and metallic Ni at the NiO/Fe interfaces, which may be due to the chemical reactions between Fe and NiO layers. This also leads to the formation of MDL. The thickness of the MDL and the reaction products are related with the deposition energy of the atoms on the substrates. The interfacial reactions are effectively suppressed by inserting a thin Pt layer at the NiO/Fe interface.     

NiO靶烧结温度对NiO/Ni81Fe19双层膜的影响

在不同的温度下烧结制备 Ni O靶 ,用射频磁控溅射法淀积 Ni O/ Ni81 Fe1 9双层膜 ,研究了不同的温度烧结 Ni O靶对 Ni O/ Ni Fe双层膜特性的影响 ,结果表明 ,使用不同的烧结温度制备的 Ni O靶溅射所得的 Ni O膜中 Ni的化学价态及其含量不同 ,进而影响 Ni O/ Ni81 Fe1 9双层膜的磁滞回线的矩形度及层间交换耦合作用     

膜厚对NiO/NiFe/Cu/NiFe磁阻效应的影响

用射频磁控溅射方法制备多层膜,研究了双层膜ＮｉＯ／ＮｉＦｅ的矫顽力Ｈｃ和交换耦合场Ｈｅｘ与反铁磁层ＮｉＯ、铁磁层ＮｉＦｅ厚度的关系,结果表明：ＮｉＯ厚度为７０ｎｍ时,Ｈｅｘ最大;Ｈｃ随ＮｉＯ厚度增大而增大．当ＮｉＦｅ厚度增加时,Ｈｅｘ近似线性减小;而Ｈｃ则随ＮｉＦｅ厚度增大开始有缓慢增加,然后才减小．对于ＮｉＯ（７０ｎｍ）／ＮｉＦｅ（ｔ１）／Ｃｕ（２．２ｎｍ）／ＮｉＦｅ（ｔ２）自旋阀多层膜材料（括号内的量表示厚度）,研究了ＮｉＦｅ膜厚度对磁阻效应的影响,结果表明：被钉扎层ＮｉＦｅ的厚度为３ｎｍ,自由层ＮｉＦｅ的厚度为５ｎｍ时,ＭＲ值最大,约为１．６％．