Effect of sintering on the relative density of Cr-coated diamond/Cu composites prepared by spark plasma sintering

Cr-coated diamond/Cu composites were prepared by spark plasma sintering. The effects of sintering pressure, sintering temperature, sintering duration, and Cu powder particle size on the relative density and thermal conductivity of the composites were investigated in this paper. The influence of these parameters on the properties and microstructures of the composites was also discussed. The results show that the relative density of Cr-coated diamond/Cu reaches ~100% when the composite is gradually compressed to 30 MPa during the heating process. The densification temperature increases from 880 to 915℃ when the diamond content is increased from 45vol% to 60vol%. The densification temperature does not increase further when the content reaches 65vol%. Cu powder particles in larger size are beneficial for increasing the relative density of the composite.     

Effect of sintering temperature on the microstructure and thermal conductivity of Al/diamond composites prepared by spark plasma sintering

Spark plasma sintering was used to fabricate Al/diamond composites. The effect of sintering temperature on the microstructure and thermal conductivity (TC) of the composites was investigated with the combination of experimental results and theoretical analysis. The composite sintered at 550℃ shows high relative density and strong interfacial bonding, whereas the composites sintered at lower (520℃) and higher (580–600℃) temperatures indicate no interfacial bonding and poor interfacial bonding, respectively. High relative density and strong interfacial bonding can maximize the thermal conductivity of Al/diamond composites, and taking both effects of particle shape and inhomogeneous interfacial thermal conductance into consideration can give a fairly good prediction of composites’ thermal conduction properties.     

Effects of boron on the microstructure and thermal properties of Cu/diamond composites prepared by pressure infiltration

Diamond reinforced copper (Cu/diamond) composites were prepared by pressure infiltration for their application in thermal management where both high thermal conductivity and low coefficient of thermal expansion (CTE) are important. They were characterized by the microstructure and thermal properties as a function of boron content, which is used for matrix-alloying to increase the interfacial bonding between the diamond and copper. The obtained composites show high thermal conductivity (>660 W/(m·K)) and low CET (<7.4×10-6 K-1) due to the formation of the B₁₃C₂ layer at the diamond-copper interface, which greatly strengthens the interfacial bonding. Thermal property measurements indicate that in the Cu-B/diamond composites, the thermal conductivity and the CTE show a different variation trend as a function of boron content, which is attributed to the thickness and distribution of the interfacial carbide layer. The CTE behavior of the present composites can be well described by Kerner’s model, especially for the composites with 0.5wt% B.     

Effect of high pressure sintering and annealing on microstructure and thermoelectric properties of nanocrystalline Bi2Te2.7Se0.3 doped with Gd

Bi2Te2.7Se0.3of high performance doped with Gd bulk materials was prepared by a high pressure(6.0 GPa) sintering(HPS) method at 593 K,633 K, 673 K and 693 K. The sample was then annealed for 36 h in a vacuum at 633 K. The phase composition, crystal structure and morphology of the sample were analyzed by X-ray diffraction and scanning electron microscopy. The electric conductivity, Seebeck coefficient, and thermal conductivity aspects of the sample were measured from 298 K to 473 K. The results show that high pressure sintering and the doping with Gd has a great effect on the crystal structure and the thermoelectric properties of the samples. The samples are consisted of nanoparticles before and after annealing, and these nanostructures have good stability at high temperature. HPS together with annealing can improve the TE properties of the sample by decreasing the thermal conductivity of the sample with nanostructures. The maximum ZT value of 0.74 was obtained at 423 K for the sample, which was sintered at 673 K and then annealed at 633 K for 36 h. Compared with the zone melting sample, it was increased by 85% at423 K. Hence the temperature of the maximum of figure of merit was increased. The results can be applied to the field of thermoelectric power generation materials.     

Selective interfacial bonding and thermal conductivity of diamond/Cu-alloy composites prepared by HPHT technique

Cu-based and Cu-alloy-based diamond composites were made by high-pressure-high-temperature (HPHT) sintering with the aim of maximizing the thermal conductivity of the composites. Improvements in interfacial bonding strength and thermo-physical properties of the composites were achieved using an atomized copper alloy with minor additions of Co, Cr, B, and Ti. The thermal conductivity (TC) obtained exhibited as high as 688 W·m-1·K-1, but also as low as 325 W·m-1·K-1. A large variation in TC can be rationalized by the discrepancy of diamond-matrix interfacial bonding. It was found from fractography that preferential bonding between diamond and the Cu-alloy matrix occurred only on the diamond {100} faces. EDS analysis and Raman spectra suggested that selective interfacial bonding may be attributed to amorphous carbon increasing the wettability between diamond and the Cu-alloy matrix. Amorphous carbon was found to significantly affect the TC of the composite by interface modification.     

高压下铌的强度和状态方程研究

室温下,以氦为传压介质的准静水压环境中加压到41GPa,在两柱全景金刚石对顶砧中加压到70GPa,研究了铌在高压下的强度和状态方程.准静水压下,X射线衍射数据拟合得到的体弹模量和其一阶导数分别为166(2)GPa和3.2(2).铌的差应力与剪切模量的比值(t/G)在超过6GPa后几乎为常数,表明由于塑性形变而发生屈服.结合高压下的剪切模量,发现铌在6GPa时由于塑性形变而发生宏观屈服时受到的差应力约为1.26GPa.差应力从2到6GPa可以表示为t=-0.557(94)+0.306(21)p,其中p是压力,单位是GPa.差应力在30GPa后再次增大,表明铌开始出现强化现象,此时对应的差应力约为1.67GPa.在70GPa时,铌受到的差应力最大,且约为3.96GPa.     

Review of metal matrix composites with high thermal conductivity for thermal management applications

Metal matrix composites with high thermal conductivity and tailorable coefficient of thermal expansion are found widespread applications in electronic package and thermal management.The latest advances in manufacturing process,thermal properties and brazing technology of SiC/metal,carbon/metal and diamond/metal composites were presented.Key factors controlling the thermo-physical properties were discussed in detail.The problems involved in the fabrication and the brazing of these composites were elucidat...     

Synthesis of high quality type-Ib diamond crystals in carats grade

High quality type-Ib tower-shape gem-diamond crystals in carats grade were synthesized in cubic anvil high pressure apparatus (SPD-6×1200) at 5.4 GPa and 1250-1450°C. The relationship between the growth time and the weight of growth diamond has been gained. The faces of {110} and {113} were found in the synthetic diamond crystals frequently. We found that the relative growth rate of {113} face was descending with the increase of growth temperature, and that of {110} face had no obvious change with the incre...     

Experimental measurement of the electrical conductivity of single crystal olivine at high temperature and high pressure under different oxygen fugacities

At 1.0?4.0 GPa and 1123?1473 K and under oxygen fugacity-controlled conditions (Ni+NiO, Fe+Fe₃O₄, Fe+FeO and Mo+MoO₂ buffers), a YJ-3000t Model six-anvil solid high-pressure apparatus and a Sarltron-1260 Impedance/Gain-Phase analyzer were employed to conduct an in situ measurement of the electrical conductivity of single crystal olivine. Experimental results showed that: (1) within the range of experimentally selected frequencies (10³?10⁶ Hz), the electrical conductivity of the sample is of great dependence on the frequency; (2) with the rise of temperature (T), the electrical conductivity (σ) will increase, and the Arrenhius linear relationship is established between lgσ and 1/T; (3) under the control of oxygen buffer Fe+Fe₃O₄, with the rise of pressure, the electrical conductivity tends to decrease whereas the activation enthalpy and independent-of-temperature preexponential factor tend to increase, with the activation energy and activation volume of the sample estimated at (1.25±0.08) eV and (0.105±0.025) cm³/mol, respectively; (4) under given pressure and temperature conditions, the electrical conductivity tends to increase whereas the activation energy tends to decrease with increasing oxygen fugacity; and (5) the mechanism of electrical conduction of small polarons can provide insight into the behavior of electrical conduction of olivine under high pressure and high temperature.     

Diamond synthesis from a system of chromium-carbide and Ni70Mn25Co5 alloy

In order to ascertain the mechanism of interaction between carbide and metallic catalyst and formation of diamond under high pressure and high temperature, and find a new method to synthesize diamond with special properties, it is necessary to investigate the reaction behavior of different carbides and metallic solvent_catalysts under high pressure and high temperature. A system of Cr-3C-2 powder and Ni 70Mn 25Co 5 alloy in weight ratio of 1∶6 was treated under 6 0 GPa and 1 500℃ for 20, 30 or 60 min respectively. X_ray diffraction of the samples indicated the Cr 3C 2 decomposed partially after high pressure and temperature treatment, and Cr 7C 3, Cr and diamond formed respectively. There was not any trace of graphite in the samples. The result suggested that the separated carbon atoms could form diamond directly without conversion process of graphite into diamond. The observation of SEI, WDX and EDX also showed that diamond crystals were synthesized in the system, which have perfect surfaces and shapes, with the average grain size of about 40 μm. The properties of the crystals are being investigated.     

Effects of Ti additive on HPHT diamond synthesis in Fe-Ni-C system

Diamond crystals with low nitrogen concentration were synthesized from the Fe-Ni-C system with Ti additive at high pressure and high temperature （HPHT） in a china-type cubic high pressure apparatus （CHPA）. The synthesis pressure range was 4.8-5.2 GPa, and the temperature range was 1420-1600 K. The lowest synthesis pressure for diamond fell first and then rose with the increase of Ti additive. The color, shape, surface morphology and nitrogen impurity concentration of the synthesized diamond crystals were characterized using optical microscopy （OM）, scanning electron microscopy （SEM） and micro Fourier transform infrared （FTIR） spectrometry. The results show that the Ti additive has significant effects on color, growth rate, crystal shape, surface morphology and nitrogen impurity con- centration of the synthesized diamond crystals. The color of diamond crystals synthesized without Ti additive is yellow, while that with Ti additive becomes light and nearly colorless. The growth rate without Ti additive is higher than that with Ti additive. The crystal shapes of as-grown diamond crystals vary with the increase of Ti additive. The {111} crystal faces become dominant and some {311} crystal faces appear with the increase of Ti additive. The concentration of nitrogen impurity in diamond crystals without Ti additive is higher than that with Ti additive.     

Fabrication and thermal conductivity of copper matrix composites reinforced by tungsten-coated carbon nanotubes

Carbon nanotubes (CNTs) were coated by tungsten using metal organic chemical vapor deposition. Magnetic stirring was employed to disperse the W-coated CNTs (W-CNTs) in a Cu matrix, and then, the mixed powders were consolidated by spark plasma sintering. The W-CNTs obtained a uniform dispersion within the Cu matrix when the W-CNT content was less than 5.0vol%, but high content of W-CNTs (10vol%) resulted in the presence of clusters. The W-CNT/Cu composites containing low content of W-CNTs (<5.0vol%) exhibited a higher thermal conductivity than the sintered pure Cu, while the CNT/Cu composites exhibited no increase in thermal conductivity after the incorporation of uncoated CNTs. The W-CNT content was found to play a crucial role in determining the thermal conductivity of the W-CNT/Cu composites. The thermal conductivity of the W-CNT/Cu composites increased first and then decreased with the W-CNT content increasing. When the W-CNT content was 2.5vol%, the W-CNT/Cu composite obtained the maximum value of thermal conductivity. The thermal resistance of the (W-CNT)-Cu interface was predicted in terms of Maxwell-Garnett effective medium approximation, and its calculated value was about 3.0×10-9 m2·K·W-1.     

镀钨碳纳米管增强铜基复合材料的制备及性能

采用羰基热分解法对多壁碳纳米管表面进行镀钨处理,并以镀钨碳纳米管和电解铜粉为原料,进行机械球磨混粉和放电等离子体烧结,制备了镀钨碳纳米管/铜基复合材料.采用场发射扫描电镜观察了粉体和复合材料的组织形貌,并对复合材料物相进行了X射线衍射分析.探讨了镀钨碳纳米管含量和放电等离子体烧结温度对复合材料致密度、抗拉强度、延伸率和电导率的影响.结果表明,镀钨碳纳米管质量分数为1%和烧结温度为850℃时,复合材料的致密度、抗拉强度和电导率最高.与烧结纯铜相比,复合材料的抗拉强度提高了103.6%,电导率仅降低15.9%.     

The electrical conductivity of H_2O at 0.21-4.18 GPa and 20 -350℃

The electrical conductivity of H2O in solid and liquid phases has been measured at 0.21-4.18 GPa and 20-350℃. The results indicate: ( i ) different phases of H2O in solid have different relations between electrical conductivity and temperature and pressure. The conductivity changes continuously with temperature, but discontinuously with the pressure between 2.11 and 2.58 GPa, which corresponds to the transforming pressure between ice (Ⅵ) and ice ( Ⅶ ) ; ( ii ) the con-ductivity of H2O in liquid all increases with temperature and pressure, but there are discontinuities at pressures between 0.57 and 0.9 GPa, and between 2.11 and 2.58 GPa, which are also consistent with the polymorph of ice (ice ( Ⅴ), ice (Ⅵ) and ice ( Ⅶ ) ) . This reflects that H2O in liquid at different pressures has quite different properties of electron chemistry. It is prob-ably the important reason that causes the layers with high electrical conductivity and low velocity in the earth's crust and upper mantle.     

SmCoO3钙钛矿氧化物的高压高温合成及其物性

采用高压高温方法合成钙钛矿型SmCoO₃氧化物, 利用XRD,Raman,电导率和热膨胀测试对样品的结构及性能进行表征. 实验结果表明, 在2.75~4.20 GPa, 1 061 ℃附近, Co₂O₃和 Sm₂O₃发生固相反应形成SmCoO₃, 但反应不完全. 单相SmCoO₃较好的合成条件为3.90 GPa和1 061 ℃左右. 室温Raman谱观察到单相样品中只有SmCoO₃正交相的特征峰. SmCoO₃样品在327 ℃以下为绝缘体, 在327 ℃以上电导率随温度升高而增加. 热膨胀系数在100~800 ℃呈线性变化.      

高压条件下几种简单金属的溶化性质

熔化熵和熔化体积是物质的重要热学参量,研究物质在高压条件下的熔化性质有助于推动高压物理、材料科学和凝聚态物理等学科的发展.应用分子动力学方法计算铝、铜、镍、钽、硅5种单质分别在2、4、6和8GPa压强下与熔化有关的参量.计算结果表明:铝、铜、镍、钽4种单质的熔化温度随压强增大而增大,熔化体积增率和熔化熵随压强增大而减小;硅单质的熔化温度和熔化熵随压强增大而减小,熔化体积增率随压强增大而增大.并对硅单质在高压条件下所表现出的特殊熔化性质进行理论解释.     

高导热碳/碳复合材料的制备

以中间相沥青和中间相沥青基碳纤维为原料, 采用碳布热压法、液相浸渍法制备了二维和三维高导热碳/碳复合材料, 且所制得复合材料的热导率分别高达443和340 W/(m·K). 依据碳/碳复合材料的热导率模型, 分析了不同结构特征参数对材料热导率的影响. 结果表明, 基体碳热导率、孔隙率以及界面相厚度均会在一定程度上影响材料的导热性能.     

纳米结构碳化钽在超高压力下硬度的研究

通过利用国产DS6×800T铰链式六面顶压机装置高温高压烧结了纳米结构的碳化钽样品,研究和表征了纳米结构碳化钽在超高压力下的物性行为。样品在3 GPa/1 500℃下进行烧结,其相对密度为93%。实验结果表明超高压力更有利于样品的致密化,并且可以降低烧结温度。通过烧结实验,得到了纳米结构碳化钽在压力为3 GPa时的维氏硬度为17.2 GPa,平均断裂韧度为(5.0±0.2)MPa m1/2。     

Synthesis of boron-doped diamond with laser heated diamond anvil cell

Boron-doped diamond has been synthesized from graphite mixed with different ratio of B₄C at high pressure high temperature (HPHT) using laser heated diamond anvil cell. The starting composition was transformed to diamond compound at pressure ∼9 GPa, 2300–2400 K as indicated by the in-situ X-ray diffraction pattern with synchrotron radiation source. Raman spectrum of the recovered specimen from HPHT state confirmed that boron has been doped into diamond lattice.     

The electrical conductivity of H2O at 0.21– 4.18 GPa and 20–350°C

The electrical conductivity of H₂O in solid and liquid phases has been measured at 0.21–4.18 GPa and 20–350°C. The results indicate: (I) different phases of H₂O in solid have different relations between electrical conductivity and temperature and pressure. The conductivity changes continuously with temperature, but discontinuously with the pressure between 2.11 and 2.58 GPa, which corresponds to the transforming pressure between ice (VI) and ice (VII);(II) the amductivity of H₂O in liquid all increases with temperature and pressure, but there are discontinuities at pressures between 0.57 and 0.9 GPa, and between 2.11 and 2.58 GPa, which are also consistent with the polyrnorph of ice (ice (V), ice (VI) and ice (VII)). This reflects that H₂O in liquid at different pressures has quite different properties of electron chemistry. It is probably the important reason that causes the layers with high electrical conductivity and low velocity in the earth’s ceust and upper mantle.