355 nm激光泵浦BN晶体受激拉曼散射实验的研究

自从受激拉曼散射被发现以后,发现了多种拉曼介质,这些拉曼介质有气体、液体还有固体,从这些介质的受激拉曼散射中得到上百条谱线,光谱分布从紫外到近红外,有效拓宽了激光光谱范围。增益较高的拉曼晶体有碳酸盐、硝酸盐和钨酸盐晶体,在这些晶体中Ba（NO3）2晶体是最有潜力的材料之一。该文研制出一套实验系统,通过受激拉曼散射的原理和实验结合来研究硝酸钡晶体的受激拉曼散射现象。研究内容主要包括如下：搭建一级放大1064 nm激光实验系统;在1064 nm有源光基础上,完成泵浦光355 nm激光的搭建;完成355 nm激光泵浦Ba（NO3）2晶体的受激拉曼散射实验研究。     

消逝场增益耦合微型球腔的光散射理论研究

 采用米氏光散射理论,计算了微型球腔中口哨廊模(WGMs)的场强分布.对球腔浸入不同折射率的液体介质后的场强分布,WGMs的消逝场模体积占总场模体积的比值(η值),WGMs的品质因素(Q值)等重要参数做了计算和分析.结果表明:随着球腔和环境介质相对折射率的减小,WGMs的Q值变低,η值增加.较高的η值,增加了消逝波增益耦合的耦合效率,有利于微型球腔中消逝波增益耦合的受激辐射放大过程.     

光泵浦半导体垂直外腔面发射激光器的原理与应用

光泵浦半导体垂直外腔面发射激光器(OPS-VECSEL)是二极管泵浦的多量子阱增益介质半导体激光器。近年来,光泵浦垂直外腔面发射激光器作为半导体能带工程的新成果,在理论和实验方面均取得了令人触目的进展。该器件具有较高的输出功率、卓越的光束质量和紧凑的结构。薄片式的激活介质避免了棒状介质的热透镜效应,周期性共振增益(PRG)结构提高了多量子阱内的受激辐射截面,分布布拉格反射器(DBR)减少了谐振腔的损耗。相对于晶体棒作激活介质的固体激光器来说,这种新型激光器可以通过半导体能带工程提供更加广泛的波长选择范围。它克服了电泵浦边发射和电泵浦面发射半导体激光器的限制,可以提供近衍射极限的基模或TEM01模的圆形光斑。     

用染料激光增益增强弱增益拉曼模式的受激拉曼散射的经典理论

 建立了用染料激光增益增强弱拉曼模式的受激拉曼散射(SRS)的经典理论,详细给出了拉曼增益g_R,染料激光增益g_D和总损耗α的表达式,并在其推导过程中对经典理论作了修正,最后得到了激光增益和受激拉曼增益可以共同使SRS强度的指数部分快速增长的结果,可以很好地解释观察到的实验现象,并为其提供理论依据.     

受激拉曼光谱系统的研制

拉曼光谱是一种包含丰富样品结构信息的光谱技术,但是拉曼光谱检测的缺点是检测灵敏度低和荧光干扰.本实验室研制的受激拉曼光谱系统,是将一束皮秒(10-12 s)脉宽的可见泵浦光和一束由飞秒(10-15 s)脉宽的探测白光共同作用于样品,产生受激拉曼信号.该光谱系统的拉曼泵浦光在可见和近紫外波段可连续调谐,可以同时获取受激拉曼光谱的增益和损失光谱,具有灵敏度高和抑制荧光干扰等优点.分别考察了拉曼泵浦光和拉曼探测光脉冲相对时序、拉曼泵浦光强度对受激拉曼光谱的影响,受激拉曼信号强度在拉曼泵浦和拉曼探测脉冲时间上完全重合时达到最大.在拉曼泵浦光强较小时,受激拉曼谱峰强度随泵浦光强度增大而增大;当拉曼泵浦光强度较大时,损失谱峰强度会趋于饱和,在研究的光强范围内增益谱峰会持续增长,未达到饱和.     

增强二元混合物中少量化合物的受激拉曼散射光谱

在二元混合物构成的悬垂液滴中，用罗丹明640染料的激光增益，增强了少量化合物的受激拉曼散射光谱，并分别将甲醇-乙醇、乙醇-水混合液中的少量化合物的受激拉曼光谱可探测极限降低了近一个数量级．     

受激拉曼散射

一、普通拉曼散射和受激拉曼散射当外界一定频率的单色光通过介质时,在散射光谱中,除了与入射光波长相同的谱线外,在此谱线的两侧分布了一些新的谱线,这些新的谱线相对于入射谱线的频率,有一定的移动规律.这与组成介质的分子结构、运动状态有关.与入射光波长无关,这过程称为拉曼散射.这时分子吸收一个入射光子hv_0,跃到一个中间状态,然后发射一个频率为v_s的光子,由能级E_n跃到E_m:     

新型激光技术研究进展

重点介绍了过去10年来厦门大学光电子技术研究所在高Q值玻璃球微腔光子学、光纤激光器、平面波导的交错复用器设计和固体激光器研究中所取得的进展情况.特别重点讨论了在光纤激光器领域所开展的研究内容以及取得最新进展:如利用掺Yb双包层光纤激光器泵浦的2级P2O5拉曼级联获得了瓦级1 480 nm输出的拉曼光纤激光器;实现了O波段多波长磷硅拉曼光纤激光器;提出并利用双泵浦光纤参量放大器作为激光增益介质,在国际上率先实现了光通信波段(1 550 nm)多波长、窄线宽光纤参量振荡器;采用光纤激光器腔内参量泵浦技术,获得了C+L波段的高性能光纤参量放大器.同时对球微腔激光器也进行了较为详尽的讨论.     

基于热流固耦合的微通道冷却系统模拟

浸入式直接液冷固体激光器的设计理念自提出以来即受到广泛关注,其增益介质与微通道内冷却介质直接接触进行换热的方式能显著提高传热效果.微通道的结构、流体流动及增益介质热负荷直接影响激光器光程差(OPD),从而影响激光出光质量.基于实际浸入式直接液冷固体激光器操作条件优化的需要,建立二薄片三通道(坐标轴x正方向为双流道流动方向)小型固体激光器冷却系统几何模型,并将热流固耦合方法和OPD计算模型相结合,模拟研究微通道内雷诺数、增益介质热负荷对OPD的影响.模拟结果表明:冷却系统的转捩雷诺数为2 600;相同热负荷下,随着微通道内流动雷诺数增大,OPD波峰与波谷的位置向x轴的负方向(单流道流动方向)移动、峰谷值增大;相同雷诺数下,随着增益介质热负荷增大,增益介质热变形程度增大,OPD的波峰与波谷位置不变、峰谷值增大;为保证固体激光器出光质量,当实际热负荷为2 000 W要求时,由于增益介质所受最大应力和微通道层流流动的限制,雷诺数应控制在2 200～2 600范围内;当雷诺数为2 300时,由于增益介质所受最大应力的限制,热负荷应控制在2 400 W内.建立的热流固耦合并结合OPD计算模型方法,...     

利用受激拉曼绝热技术制备腔模的高维纠缠态

将两全同原子囚禁于用光纤连接的两个光腔中,经绝热演化可以制备腔模的高维纠缠态.该方案利用受激拉曼绝热技术,只需恰当地控制原子与腔场的耦合参数,就可以有效地抑制原子的自发辐射以及光纤损耗等消相干因素的影响.     

水的受激Raman散射

利用532 nm脉冲激光研究水的受激Raman散射, 并利用激光诱导产生的等离子体解释了前向、 后向和侧向水受激Raman散射的差异. 结果表明: 水与甲醇和乙醇的受激Raman阈值基本相同,  大于苯、 甲苯和二硫化碳的受激Raman阈值; 当能量为140 mJ时, 出现前向Stokes和反Stokes 3 426 cm^-1谱线, 后向和侧向出现3 400,3 268 cm^-1的受激Stokes谱线.     

Raman injection laser

Stimulated Raman scattering is a nonlinear optical process that, in a broad variety of materials, enables the generation of optical gain at a frequency that is shifted from that of the incident radiation by an amount corresponding to the frequency of an internal oscillation of the material. This effect is the basis for a broad class of tunable sources known as Raman lasers. In general, these sources have only small gain (approximately 10(-9) cm W(-1)) and therefore require external pumping with powerful lasers, which limits their applications. Here we report the realization of a semiconductor injection Raman laser designed to circumvent these limitations. The physics underlying our device differs in a fundamental way from existing Raman lasers: it is based on triply resonant stimulated Raman scattering between quantum-confined states within the active region of a quantum cascade laser that serves as an internal optical pump--the device is driven electrically and no external laser pump is required. This leads to an enhancement of orders of magnitude in the Raman gain, high conversion efficiency and low threshold. Our lasers combine the advantages of nonlinear optical devices and of semiconductor injection lasers, and could lead to a new class of compact and wavelength-agile mid-and far-infrared light sources.     

SiO_2分子受激喇曼散射的理论计算

本文利用群论方法计算了ＳｉＯ＿２分子受激喇曼散射的跃迁矩阵元，给出了受激喇曼散射的截面和增益系数，较好地与实验结果符合。     

A continuous-wave Raman silicon laser

Achieving optical gain and/or lasing in silicon has been one of the most challenging goals in silicon-based photonics because bulk silicon is an indirect bandgap semiconductor and therefore has a very low light emission efficiency. Recently, stimulated Raman scattering has been used to demonstrate light amplification and lasing in silicon. However, because of the nonlinear optical loss associated with two-photon absorption (TPA)-induced free carrier absorption (FCA), until now lasing has been limited to pulsed operation. Here we demonstrate a continuous-wave silicon Raman laser. Specifically, we show that TPA-induced FCA in silicon can be significantly reduced by introducing a reverse-biased p-i-n diode embedded in a silicon waveguide. The laser cavity is formed by coating the facets of the silicon waveguide with multilayer dielectric films. We have demonstrated stable single mode laser output with side-mode suppression of over 55 dB and linewidth of less than 80 MHz. The lasing threshold depends on the p-i-n reverse bias voltage and the laser wavelength can be tuned by adjusting the wavelength of the pump laser. The demonstration of a continuous-wave silicon laser represents a significant milestone for silicon-based optoelectronic devices.     

An all-silicon Raman laser

The possibility of light generation and/or amplification in silicon has attracted a great deal of attention for silicon-based optoelectronic applications owing to the potential for forming inexpensive, monolithic integrated optical components. Because of its indirect bandgap, bulk silicon shows very inefficient band-to-band radiative electron-hole recombination. Light emission in silicon has thus focused on the use of silicon engineered materials such as nanocrystals, Si/SiO2 superlattices, erbium-doped silicon-rich oxides, surface-textured bulk silicon and Si/SiGe quantum cascade structures. Stimulated Raman scattering (SRS) has recently been demonstrated as a mechanism to generate optical gain in planar silicon waveguide structures. In fact, net optical gain in the range 2-11 dB due to SRS has been reported in centimetre-sized silicon waveguides using pulsed pumping. Recently, a lasing experiment involving silicon as the gain medium by way of SRS was reported, where the ring laser cavity was formed by an 8-m-long optical fibre. Here we report the experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip. This demonstration represents an important step towards producing practical continuous-wave optical amplifiers and lasers that could be integrated with other optoelectronic components onto CMOS-compatible silicon chips.     

SRS、SBS效应对双向光纤通信系统中光信号功率的衰减

对双向密集波分复用光纤通信系统中的ＳＢＳ（受激布里渊散射）,ＳＲＳ（受激喇曼散射）的联合作用进行了研究,从理论上给出了ＳＢＳ,ＳＲＳ效应共同作用下小信号功率的衰减公式,定量分析了目前研究中的相干光通信系统和ＨＤ－ＷＤＭ系统中由ＳＢＳ,ＳＲＳ效应产生的非线性功率衰减、研究结果表明,在考虑ＳＲＳ作用的同时,必须考虑ＳＢＳ的作用。     

Study of stimulated Raman and Brillouin scattering in a finite interaction region under the convective instability condition

We discuss stimulated Raman scattering (SRS) and stimulated Brillouin scattering (SBS) under the convective instability condition with a one-dimensional three-wave interaction (3WI) model.Using linear theory,we deduce the temporal growth rate,gain exponent,and reflectivity of the backward scattered wave in a finite interaction region.We find that the growth rate is not only determined by the laser intensity and plasma density and temperature,but also related to the spatial gain.The length of the interaction region is important to the gain exponent and backscattering level.We simulate the developments and evolutions of SRS and SBS based on the 3WI equations.Our numerical results consist with the linear theory.